Fairchild/ON Semiconductor FDC6304P

Name: FDC6304P
Brand: Fairchild/ON Semiconductor
SKU: 2473387-FDC6304P
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDC6304P

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2473387-FDC6304P

Description:: MOSFET 2P-CH 25V 0.46A SSOT-6

ECAD Model:

Datasheet:: FDC6304P

Specifications

Fairchild/ON Semiconductor FDC6304P technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDC6304P.

Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Factory Lead Time
10 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-23-6 Thin, TSOT-23-6
Number of Pins
6
Weight
36mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Resistance
1.1Ohm
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
-25V
Max Power Dissipation
700mW
Terminal Form
GULL WING
Current Rating
-460mA
Number of Elements
2
Element Configuration
Dual
Operating Mode
ENHANCEMENT MODE
Power Dissipation
900mW
Turn On Delay Time
7 ns
FET Type
2 P-Channel (Dual)
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
1.1 Ω @ 500mA, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
62pF @ 10V
Current - Continuous Drain (Id) @ 25°C
460mA
Gate Charge (Qg) (Max) @ Vgs
1.5nC @ 4.5V
Rise Time
8ns
Drain to Source Voltage (Vdss)
25V
Fall Time (Typ)
8 ns
Turn-Off Delay Time
55 ns
Continuous Drain Current (ID)
-460mA
Threshold Voltage
-860mV
Gate to Source Voltage (Vgs)
8V
Drain to Source Breakdown Voltage
-25V
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Logic Level Gate
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FDC6304P Description These P-channel enhanced mode field effect transistors are produced using on Semiconductor's proprietary high cell density. DMOS technology. This very high-density process is tailor-made to minimize on-resistance under low gate driving conditions. The device is designed for battery-powered applications such as laptops and mobile phones. The device has excellent on-resistance even at a gate drive voltage as low as 2.5 volts. FDC6304P Features
-25V.-0.46 Acontinuous-1.0APeak. RpsiON=1.5|?@Vas=-2.7V RD8ION=1.1|?@Vas=-4.5V. Very low level gate drive requirements allowing direc! operation in 3V circuits. Vcs<1.5V. Gate-Source Zener for ESD ruggedness.>6kV Human Body Model. FDC6304P Applications
battery-powered applications

FDC6304P More Descriptions

Transistor MOSFET Positive Channel 25 Volt 0.46A 6-Pin SuperSOT T/R
Transistor MOSFET Array Dual P-CH 25V 0.46A 6-Pin TSOT-23 T/R
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-25V; Continuous Drain Current, Id:-0.46A; On Resistance, Rds(on):1.1ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:SuperSOT-6 ;RoHS Compliant: Yes
These P-Channel enhancement mode field effect transistor are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance at low gate drive conditions. This device is designed especially for application in battery power applications such as notebook computers and cellular phones. This device has excellent on-state resistance even at gate drive voltages as low as 2.5 volts.

Certification