EGP50GHE3/54

Vishay Semiconductor Diodes Division EGP50GHE3/54

Part Number:
EGP50GHE3/54
Manufacturer:
Vishay Semiconductor Diodes Division
Ventron No:
3582380-EGP50GHE3/54
Description:
DIODE GEN PURP 400V 5A GP20
ECAD Model:
Datasheet:
EGP50A thru EGP50G

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Specifications
Vishay Semiconductor Diodes Division EGP50GHE3/54 technical specifications, attributes, parameters and parts with similar specifications to Vishay Semiconductor Diodes Division EGP50GHE3/54.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    DO-201AA, DO-27, Axial
  • Number of Pins
    20
  • Diode Element Material
    SILICON
  • Packaging
    Tape & Reel (TR)
  • Series
    SUPERECTIFIER®
  • Published
    2012
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -65°C
  • Additional Feature
    FREE WHEELING DIODE, LOW LEAKAGE CURRENT
  • HTS Code
    8541.10.00.80
  • Subcategory
    Rectifier Diodes
  • Terminal Form
    WIRE
  • Base Part Number
    EGP50G
  • Pin Count
    2
  • JESD-30 Code
    O-PALF-W2
  • Number of Elements
    1
  • Element Configuration
    Single
  • Speed
    Fast Recovery =< 500ns, > 200mA (Io)
  • Diode Type
    Standard
  • Current - Reverse Leakage @ Vr
    5μA @ 400V
  • Voltage - Forward (Vf) (Max) @ If
    1.25V @ 5A
  • Case Connection
    ISOLATED
  • Forward Current
    5A
  • Operating Temperature - Junction
    -65°C~150°C
  • Max Surge Current
    150A
  • Output Current-Max
    5A
  • Application
    EFFICIENCY
  • Max Reverse Voltage (DC)
    400V
  • Average Rectified Current
    5A
  • Number of Phases
    1
  • Reverse Recovery Time
    50 ns
  • Peak Reverse Current
    5μA
  • Max Repetitive Reverse Voltage (Vrrm)
    400V
  • Capacitance @ Vr, F
    75pF @ 4V 1MHz
  • Peak Non-Repetitive Surge Current
    150A
  • Reverse Voltage
    400V
  • Recovery Time
    50 ns
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
EGP50GHE3/54 Overview
An appropriate reverse voltage is 400V.Devices with this rating have an average rectified current of 5A volts.5A is the maximum value of forward current.There can be no surge current above 150A.There is no maximum output current when the value is 5A.Using the data chart, the peak reverse is 5μA in the datasheets.

EGP50GHE3/54 Features
an average rectified current of 5A volts
5A is the maximum value
the peak reverse is 5μA


EGP50GHE3/54 Applications
There are a lot of Vishay Semiconductor Diodes Division
EGP50GHE3/54 applications of single-phase diode rectifier.


DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
EGP50GHE3/54 More Descriptions
Diode Switching 400V 5A 2-Pin Case GP-20 T/R
Rectifiers 400 Volt 5.0A 50ns Glass Passivated
Diode; Diode Type:Fast Recovery; Repetitive Reverse Voltage Max Vrrm:400V; Forward Current If(AV):5A; Forward Voltage VF Max:1.25V; Reverse Recovery Time trr Max:50ns; Forward Surge Current Ifsm Max:150A ;RoHS Compliant: Yes
Product Comparison
The three parts on the right have similar specifications to EGP50GHE3/54.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Diode Element Material
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Max Operating Temperature
    Min Operating Temperature
    Additional Feature
    HTS Code
    Subcategory
    Terminal Form
    Base Part Number
    Pin Count
    JESD-30 Code
    Number of Elements
    Element Configuration
    Speed
    Diode Type
    Current - Reverse Leakage @ Vr
    Voltage - Forward (Vf) (Max) @ If
    Case Connection
    Forward Current
    Operating Temperature - Junction
    Max Surge Current
    Output Current-Max
    Application
    Max Reverse Voltage (DC)
    Average Rectified Current
    Number of Phases
    Reverse Recovery Time
    Peak Reverse Current
    Max Repetitive Reverse Voltage (Vrrm)
    Capacitance @ Vr, F
    Peak Non-Repetitive Surge Current
    Reverse Voltage
    Recovery Time
    Radiation Hardening
    RoHS Status
    View Compare
  • EGP50GHE3/54
    EGP50GHE3/54
    Through Hole
    Through Hole
    DO-201AA, DO-27, Axial
    20
    SILICON
    Tape & Reel (TR)
    SUPERECTIFIER®
    2012
    e3
    yes
    Obsolete
    1 (Unlimited)
    2
    EAR99
    Matte Tin (Sn)
    150°C
    -65°C
    FREE WHEELING DIODE, LOW LEAKAGE CURRENT
    8541.10.00.80
    Rectifier Diodes
    WIRE
    EGP50G
    2
    O-PALF-W2
    1
    Single
    Fast Recovery =< 500ns, > 200mA (Io)
    Standard
    5μA @ 400V
    1.25V @ 5A
    ISOLATED
    5A
    -65°C~150°C
    150A
    5A
    EFFICIENCY
    400V
    5A
    1
    50 ns
    5μA
    400V
    75pF @ 4V 1MHz
    150A
    400V
    50 ns
    No
    ROHS3 Compliant
    -
  • EGP50DHE3/54
    Through Hole
    Through Hole
    DO-201AA, DO-27, Axial
    20
    SILICON
    Tape & Reel (TR)
    SUPERECTIFIER®
    2012
    e3
    yes
    Obsolete
    1 (Unlimited)
    2
    EAR99
    Matte Tin (Sn)
    150°C
    -65°C
    FREE WHEELING DIODE, LOW LEAKAGE CURRENT
    8541.10.00.80
    Rectifier Diodes
    WIRE
    EGP50D
    2
    O-PALF-W2
    1
    Single
    Fast Recovery =< 500ns, > 200mA (Io)
    Standard
    5μA @ 200V
    950mV @ 5A
    ISOLATED
    5A
    -65°C~150°C
    150A
    5A
    EFFICIENCY
    200V
    5A
    1
    50 ns
    5μA
    200V
    95pF @ 4V 1MHz
    150A
    200V
    50 ns
    No
    ROHS3 Compliant
  • EGP50FHE3/54
    Through Hole
    Through Hole
    DO-201AA, DO-27, Axial
    20
    SILICON
    Tape & Reel (TR)
    SUPERECTIFIER®
    2012
    e3
    yes
    Obsolete
    1 (Unlimited)
    2
    EAR99
    Matte Tin (Sn)
    150°C
    -65°C
    FREE WHEELING DIODE, LOW LEAKAGE CURRENT
    8541.10.00.80
    Rectifier Diodes
    WIRE
    EGP50F
    2
    O-PALF-W2
    1
    Single
    Fast Recovery =< 500ns, > 200mA (Io)
    Standard
    5μA @ 300V
    1.25V @ 5A
    ISOLATED
    5A
    -65°C~150°C
    150A
    5A
    EFFICIENCY
    300V
    5A
    1
    50 ns
    5μA
    300V
    75pF @ 4V 1MHz
    150A
    300V
    50 ns
    No
    ROHS3 Compliant
  • EGP50AHE3/73
    Through Hole
    Through Hole
    DO-201AA, DO-27, Axial
    20
    SILICON
    Tape & Box (TB)
    SUPERECTIFIER®
    2012
    e3
    yes
    Obsolete
    1 (Unlimited)
    2
    EAR99
    Matte Tin (Sn)
    150°C
    -65°C
    FREE WHEELING DIODE, LOW LEAKAGE CURRENT
    8541.10.00.80
    Rectifier Diodes
    WIRE
    EGP50A
    2
    O-PALF-W2
    1
    Single
    Fast Recovery =< 500ns, > 200mA (Io)
    Standard
    5μA @ 50V
    950mV @ 5A
    ISOLATED
    5A
    -65°C~150°C
    150A
    5A
    EFFICIENCY
    50V
    5A
    1
    50 ns
    5μA
    50V
    95pF @ 4V 1MHz
    150A
    50V
    50 ns
    No
    ROHS3 Compliant
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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