Rohm Semiconductor DTA115EUAT106
- Part Number:
- DTA115EUAT106
- Manufacturer:
- Rohm Semiconductor
- Ventron No:
- 2469632-DTA115EUAT106
- Description:
- TRANS PREBIAS PNP 200MW UMT3
- Datasheet:
- DTA115EUAT106
Rohm Semiconductor DTA115EUAT106 technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor DTA115EUAT106.
- Factory Lead Time10 Weeks
- Contact PlatingCopper, Silver, Tin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSC-70, SOT-323
- Number of Pins3
- PackagingTape & Reel (TR)
- Published2011
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- TerminationSMD/SMT
- ECCN CodeEAR99
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Additional FeatureBUILT-IN BIAS RESISTOR RATIO IS 1
- HTS Code8541.21.00.75
- SubcategoryBIP General Purpose Small Signal
- Voltage - Rated DC-50V
- Max Power Dissipation200mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating-20mA
- Time@Peak Reflow Temperature-Max (s)10
- Base Part NumberDTA115
- Pin Count3
- Max Output Current100mA
- Operating Supply Voltage50V
- Number of Elements1
- PolarityPNP
- Element ConfigurationSingle
- Power Dissipation200mW
- Transistor ApplicationSWITCHING
- Transistor TypePNP - Pre-Biased
- Collector Emitter Voltage (VCEO)300mV
- Max Collector Current20mA
- DC Current Gain (hFE) (Min) @ Ic, Vce82 @ 5mA 5V
- Current - Collector Cutoff (Max)500nA
- Vce Saturation (Max) @ Ib, Ic300mV @ 250μA, 5mA
- Collector Emitter Breakdown Voltage50V
- Transition Frequency250MHz
- Max Breakdown Voltage50V
- Frequency - Transition250MHz
- hFE Min82
- Resistor - Base (R1)100 k Ω
- Continuous Collector Current-100mA
- Resistor - Emitter Base (R2)100 k Ω
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
DTA115EUAT106 Overview
This product is manufactured by Rohm Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Single, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet DTA115EUAT106 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of DTA115EUAT106. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Rohm Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Single, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet DTA115EUAT106 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of DTA115EUAT106. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
DTA115EUAT106 More Descriptions
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
Trans Digital BJT PNP 50V 100mA 200mW 3-Pin UMT T/R
DTA115EUA Series 50 V 100 mA Surface Mount PNP Digital Transistor - SC-70
Transistor, Rf, Pnp, -50V, 250Mhz, Sot-323-3; Transistor Polarity:Single Pnp; Collector Emitter Voltage Max Npn:-; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; Base Input Resistor R1:100Kohm Rohs Compliant: Yes |Rohm DTA115EUAT106
); Current Ic Continuous a Max:100mA; Gain Bandwidth ft Typ:250MHz; Hfe Min:82; Package / Case:SOT-323; Power Dissipation Pd:200mW; Termination Type:SMD; Transistor Type:General Purpose
Trans Digital BJT PNP 50V 100mA 200mW 3-Pin UMT T/R
DTA115EUA Series 50 V 100 mA Surface Mount PNP Digital Transistor - SC-70
Transistor, Rf, Pnp, -50V, 250Mhz, Sot-323-3; Transistor Polarity:Single Pnp; Collector Emitter Voltage Max Npn:-; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; Base Input Resistor R1:100Kohm Rohs Compliant: Yes |Rohm DTA115EUAT106
); Current Ic Continuous a Max:100mA; Gain Bandwidth ft Typ:250MHz; Hfe Min:82; Package / Case:SOT-323; Power Dissipation Pd:200mW; Termination Type:SMD; Transistor Type:General Purpose
The three parts on the right have similar specifications to DTA115EUAT106.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsPackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeTerminal FinishMax Operating TemperatureMin Operating TemperatureAdditional FeatureHTS CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountMax Output CurrentOperating Supply VoltageNumber of ElementsPolarityElement ConfigurationPower DissipationTransistor ApplicationTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyMax Breakdown VoltageFrequency - TransitionhFE MinResistor - Base (R1)Continuous Collector CurrentResistor - Emitter Base (R2)REACH SVHCRadiation HardeningRoHS StatusLead FreeReach Compliance CodeJESD-30 CodeQualification StatusSurface MountTransistor Element MaterialConfigurationPower - MaxPolarity/Channel TypeVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Power Dissipation-Max (Abs)Max FrequencyEmitter Base Voltage (VEBO)View Compare
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DTA115EUAT10610 WeeksCopper, Silver, TinSurface MountSurface MountSC-70, SOT-3233Tape & Reel (TR)2011e1yesNot For New Designs1 (Unlimited)3SMD/SMTEAR99Tin/Silver/Copper (Sn/Ag/Cu)150°C-55°CBUILT-IN BIAS RESISTOR RATIO IS 18541.21.00.75BIP General Purpose Small Signal-50V200mWDUALGULL WING260-20mA10DTA1153100mA50V1PNPSingle200mWSWITCHINGPNP - Pre-Biased300mV20mA82 @ 5mA 5V500nA300mV @ 250μA, 5mA50V250MHz50V250MHz82100 k Ω-100mA100 k ΩNo SVHCNoROHS3 CompliantLead Free--------------
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--Surface MountSurface MountSC-75, SOT-416-Tape & Reel (TR)2006e0-Obsolete1 (Unlimited)3-EAR99Tin/Lead (Sn/Pb)150°C-55°CBUILT-IN BIAS RESISTOR RATIO IS 21.36-BIP General Purpose Small Signal-50V200mWDUALGULL WING240-100mA30DTA1233--1PNPSingle200mWSWITCHINGPNP - Pre-Biased250mV100mA80 @ 5mA 10V500nA250mV @ 300μA, 10mA50V---802.2 k Ω100mA47 k Ω--Non-RoHS CompliantContains Leadnot_compliantR-PDSO-G3Not Qualified----------
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12 Weeks--Surface MountTO-236-3, SC-59, SOT-23-3-Tape & Reel (TR)2004e3yesActive1 (Unlimited)3-EAR99Matte Tin (Sn)--BUILT IN BAIS RESISTOR RATIO IS 10-BIP General Purpose Small Signal--DUALGULL WING260-10DTA143Z3--1---SWITCHINGPNP - Pre-Biased--80 @ 10mA 5V500nA300mV @ 250μA, 5mA-250MHz-250MHz-4.7 k Ω-47 k Ω--ROHS3 Compliant--R-PDSO-G3Not QualifiedYESSILICONSINGLE WITH BUILT-IN RESISTOR200mWPNP50V100mA0.2W--
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10 Weeks-Surface MountSurface MountSC-70, SOT-3233Tape & Reel (TR)2013e1yesNot For New Designs1 (Unlimited)3-EAR99Tin/Silver/Copper (Sn/Ag/Cu)150°C-55°CBUILT IN BIAS RESISTOR-BIP General Purpose Small Signal-200mWDUALFLAT260-10DTA1143--1PNPSingle-SWITCHINGPNP - Pre-Biased300mV100mA100 @ 1mA 5V500nA ICBO300mV @ 1mA, 10mA50V250MHz-250MHz10010 k Ω-100mA--NoROHS3 CompliantLead Free-----------250MHz-5V
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