Rohm Semiconductor DTA114EETL
- Part Number:
- DTA114EETL
- Manufacturer:
- Rohm Semiconductor
- Ventron No:
- 3813483-DTA114EETL
- Description:
- TRANS PREBIAS PNP 150MW EMT3
- Datasheet:
- DTA114EETL
Rohm Semiconductor DTA114EETL technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor DTA114EETL.
- Factory Lead Time13 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSC-75, SOT-416
- Number of Pins3
- PackagingDigi-Reel®
- Published2009
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- TerminationSMD/SMT
- ECCN CodeEAR99
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Additional FeatureBUILT-IN BIAS RESISTOR RATIO IS 1
- HTS Code8541.21.00.75
- SubcategoryBIP General Purpose Small Signals
- Voltage - Rated DC-50V
- Max Power Dissipation150mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating-50mA
- Time@Peak Reflow Temperature-Max (s)10
- Base Part NumberDTA114
- Pin Count3
- Max Output Current100mA
- Operating Supply Voltage50V
- Number of Elements1
- PolarityPNP
- Element ConfigurationSingle
- Power Dissipation150mW
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Transistor TypePNP - Pre-Biased
- Collector Emitter Voltage (VCEO)300mV
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 5mA 5V
- Current - Collector Cutoff (Max)500nA
- Vce Saturation (Max) @ Ib, Ic300mV @ 500μA, 10mA
- Collector Emitter Breakdown Voltage50V
- Transition Frequency250MHz
- Max Breakdown Voltage50V
- Frequency - Transition250MHz
- hFE Min30
- Resistor - Base (R1)10 k Ω
- Continuous Collector Current-50mA
- Resistor - Emitter Base (R2)10 k Ω
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
DTA114EETL Overview
This product is manufactured by Rohm Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Single, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet DTA114EETL or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of DTA114EETL. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Rohm Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Single, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet DTA114EETL or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of DTA114EETL. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
DTA114EETL More Descriptions
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
DTA114EE Series 50 V 100 mA Surface Mount PNP Digital Transistor - EMT-3
30@5mA,5V One PNP - Pre-Biased 150mW 100mA 50V 500nA SOT-523(SC-75) Digital Transistors ROHS
Trans Digital BJT PNP 50V 100mA 3-Pin EMT T/R
Transistor, DIGITAL, PNP; Digital Transistor Polarity:Single Collector Emitter Voltage V(br)ceo:50V; Continuous Current Ic:-100mA;
TRANSISTOR, DIGITAL, PNP; Transistor Type:Digital Bipolar; Transistor Polarity:PNP; Collector-to-Emitter Breakdown Voltage:50V; Current Ic Continuous a Max:100mA; Power Dissipation:150mW; ft, Typ:250MHz; Case Style:EMT3; Termination ;RoHS Compliant: Yes
TRANSISTOR, DIGITAL, PNP; Digital Transistor Polarity: Single PNP; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: -100mA; Base Input Resistor R1: 10kohm; Base-Emitter Resistor R2: 10kohm; Resistor Ratio, R1 / R2: -; RF Transistor Case: EMT; No. of Pins: 3 Pin; Product Range: DTA114E Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Application Code: TL; Continuous Collector Current Ic Max: 100mA; Current Ic Continuous a Max: 100mA; DC Collector Current: 100mA; DC Current Gain hFE: 30hFE; Gain Bandwidth ft Typ: 250MHz; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Power Dissipation Pd: 150mW; Power Dissipation Ptot Max: 150mW; Termination Type: Surface Mount Device; Transistor Case Style: EMT; Transistor Polarity: PNP; Transistor Type: Bias Resistor (BRT); Transition Frequency ft: 250MHz
DTA114EE Series 50 V 100 mA Surface Mount PNP Digital Transistor - EMT-3
30@5mA,5V One PNP - Pre-Biased 150mW 100mA 50V 500nA SOT-523(SC-75) Digital Transistors ROHS
Trans Digital BJT PNP 50V 100mA 3-Pin EMT T/R
Transistor, DIGITAL, PNP; Digital Transistor Polarity:Single Collector Emitter Voltage V(br)ceo:50V; Continuous Current Ic:-100mA;
TRANSISTOR, DIGITAL, PNP; Transistor Type:Digital Bipolar; Transistor Polarity:PNP; Collector-to-Emitter Breakdown Voltage:50V; Current Ic Continuous a Max:100mA; Power Dissipation:150mW; ft, Typ:250MHz; Case Style:EMT3; Termination ;RoHS Compliant: Yes
TRANSISTOR, DIGITAL, PNP; Digital Transistor Polarity: Single PNP; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: -100mA; Base Input Resistor R1: 10kohm; Base-Emitter Resistor R2: 10kohm; Resistor Ratio, R1 / R2: -; RF Transistor Case: EMT; No. of Pins: 3 Pin; Product Range: DTA114E Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Application Code: TL; Continuous Collector Current Ic Max: 100mA; Current Ic Continuous a Max: 100mA; DC Collector Current: 100mA; DC Current Gain hFE: 30hFE; Gain Bandwidth ft Typ: 250MHz; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Power Dissipation Pd: 150mW; Power Dissipation Ptot Max: 150mW; Termination Type: Surface Mount Device; Transistor Case Style: EMT; Transistor Polarity: PNP; Transistor Type: Bias Resistor (BRT); Transition Frequency ft: 250MHz
The three parts on the right have similar specifications to DTA114EETL.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsPackagingPublishedPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeMax Operating TemperatureMin Operating TemperatureAdditional FeatureHTS CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountMax Output CurrentOperating Supply VoltageNumber of ElementsPolarityElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyMax Breakdown VoltageFrequency - TransitionhFE MinResistor - Base (R1)Continuous Collector CurrentResistor - Emitter Base (R2)REACH SVHCRadiation HardeningRoHS StatusLead FreeJESD-609 CodeTerminal FinishReach Compliance CodeJESD-30 CodeQualification StatusSurface MountTransistor Element MaterialConfigurationPower - MaxPolarity/Channel TypeVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Power Dissipation-Max (Abs)View Compare
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DTA114EETL13 WeeksSurface MountSurface MountSC-75, SOT-4163Digi-Reel®2009yesActive1 (Unlimited)3SMD/SMTEAR99150°C-55°CBUILT-IN BIAS RESISTOR RATIO IS 18541.21.00.75BIP General Purpose Small Signals-50V150mWDUALGULL WING260-50mA10DTA1143100mA50V1PNPSingle150mWCOLLECTORSWITCHINGPNP - Pre-Biased300mV100mA30 @ 5mA 5V500nA300mV @ 500μA, 10mA50V250MHz50V250MHz3010 k Ω-50mA10 k ΩNo SVHCNoROHS3 CompliantLead Free--------------
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-Surface MountSurface MountSC-75, SOT-416-Tape & Reel (TR)2006-Obsolete1 (Unlimited)3-EAR99150°C-55°CBUILT-IN BIAS RESISTOR RATIO IS 21.36-BIP General Purpose Small Signal-50V200mWDUALGULL WING240-100mA30DTA1233--1PNPSingle200mW-SWITCHINGPNP - Pre-Biased250mV100mA80 @ 5mA 10V500nA250mV @ 300μA, 10mA50V---802.2 k Ω100mA47 k Ω--Non-RoHS CompliantContains Leade0Tin/Lead (Sn/Pb)not_compliantR-PDSO-G3Not Qualified--------
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12 Weeks-Surface MountTO-236-3, SC-59, SOT-23-3-Tape & Reel (TR)2004yesActive1 (Unlimited)3-EAR99--BUILT IN BAIS RESISTOR RATIO IS 10-BIP General Purpose Small Signal--DUALGULL WING260-10DTA143Z3--1----SWITCHINGPNP - Pre-Biased--80 @ 10mA 5V500nA300mV @ 250μA, 5mA-250MHz-250MHz-4.7 k Ω-47 k Ω--ROHS3 Compliant-e3Matte Tin (Sn)-R-PDSO-G3Not QualifiedYESSILICONSINGLE WITH BUILT-IN RESISTOR200mWPNP50V100mA0.2W
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13 WeeksSurface MountSurface MountSOT-7233Tape & Reel (TR)2006yesActive1 (Unlimited)3-EAR99150°C-55°CBUILT IN BIAS RESISTOR RATIO IS 18541.21.00.75BIP General Purpose Small Signal-50V150mWDUALFLAT260-30mA10DTA1243--1PNPSingle150mW-SWITCHINGPNP - Pre-Biased300mV30mA56 @ 5mA 5V500nA300mV @ 500μA, 10mA50V250MHz50V250MHz5622 k Ω-100mA22 k Ω-NoROHS3 CompliantLead Freee2Tin/Copper (Sn/Cu)-----------
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