Rohm Semiconductor DTA114EMT2L

Name: DTA114EMT2L
Brand: Rohm Semiconductor
SKU: 2471261-DTA114EMT2L
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: DTA114EMT2L

Manufacturer:: Rohm Semiconductor

Ventron No:: 2471261-DTA114EMT2L

Description:: TRANS PREBIAS PNP 150MW VMT3

ECAD Model:

Datasheet:: DTA114EMT2L

Specifications

Rohm Semiconductor DTA114EMT2L technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor DTA114EMT2L.

Factory Lead Time
13 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-723
Number of Pins
3
Packaging
Tape & Reel (TR)
Published
2006
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
SMD/SMT
ECCN Code
EAR99
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Additional Feature
BUILT-IN BIAS RESISTOR RATIO IS 1
HTS Code
8541.21.00.75
Subcategory
BIP General Purpose Small Signals
Voltage - Rated DC
-50V
Max Power Dissipation
150mW
Terminal Position
DUAL
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Current Rating
-50mA
Time@Peak Reflow Temperature-Max (s)
10
Base Part Number
DTA114
Pin Count
3
Number of Elements
1
Polarity
PNP
Element Configuration
Single
Power Dissipation
150mW
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Transistor Type
PNP - Pre-Biased
Collector Emitter Voltage (VCEO)
300mV
Max Collector Current
50mA
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 5mA 5V
Current - Collector Cutoff (Max)
500nA
Vce Saturation (Max) @ Ib, Ic
300mV @ 500μA, 10mA
Collector Emitter Breakdown Voltage
50V
Transition Frequency
250MHz
Max Breakdown Voltage
50V
Frequency - Transition
250MHz
hFE Min
30
Resistor - Base (R1)
10 k Ω
Continuous Collector Current
-50mA
Resistor - Emitter Base (R2)
10 k Ω
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

DTA114EMT2L Overview
This product is manufactured by Rohm Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Single, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet DTA114EMT2L or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of DTA114EMT2L. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

DTA114EMT2L More Descriptions

Trans Digital BJT PNP 50V 100mA 3-Pin VMT T/R
TRANSISTOR, DIGITAL, PNP; Digital Transistor Polarity: Single PNP; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: -100mA; Base Input Resistor R1: 10kohm; Base-Emitter Resistor R2: 10kohm; Resistor R
TRANSISTOR, DIGITAL, PNP; Transistor type:PNP Not Gate; Voltage, Vceo:50V; Current, Ic continuous a max:-100mA; Power dissipation:150mW; ft, typ:250MHz; Case style:VMT3; Application code:T2L; Current, Ic max:100mA; Power, RoHS Compliant: Yes

Product Comparison

The three parts on the right have similar specifications to DTA114EMT2L.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Packaging

Published

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Max Operating Temperature

Min Operating Temperature

Additional Feature

HTS Code

Subcategory

Voltage - Rated DC

Max Power Dissipation

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Number of Elements

Polarity

Element Configuration

Power Dissipation

Case Connection

Transistor Application

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Transition Frequency

Max Breakdown Voltage

Frequency - Transition

hFE Min

Resistor - Base (R1)

Continuous Collector Current

Resistor - Emitter Base (R2)

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Lifecycle Status

Surface Mount

JESD-609 Code

Terminal Finish

Halogen Free

Transistor Element Material

JESD-30 Code

Qualification Status

Configuration

Power - Max

Polarity/Channel Type

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Power Dissipation-Max (Abs)

Collector Emitter Saturation Voltage

Height

Length

Width

View Compare
DTA114EMT2L

Rohm Semiconductor

13 Weeks

Surface Mount

Surface Mount

SOT-723

3

Tape & Reel (TR)

2006

yes

Active

1 (Unlimited)

3

SMD/SMT

EAR99

150°C

-55°C

BUILT-IN BIAS RESISTOR RATIO IS 1

8541.21.00.75

BIP General Purpose Small Signals

-50V

150mW

DUAL

FLAT

260

-50mA

10

DTA114

3

1

PNP

Single

150mW

COLLECTOR

SWITCHING

PNP - Pre-Biased

300mV

50mA

20 @ 5mA 5V

500nA

300mV @ 500μA, 10mA

50V

250MHz

50V

250MHz

30

10 k Ω

-50mA

10 k Ω

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
DTA143EM3T5G

ON Semiconductor

2 Weeks

-

Surface Mount

SOT-723

3

Tape & Reel (TR)

2009

yes

Active

1 (Unlimited)

3

-

EAR99

150°C

-55°C

BUILT-IN BIAS RESISTOR RATIO IS 1

-

BIP General Purpose Small Signal

-50V

260mW

DUAL

FLAT

260

-100mA

40

DTA143

3

1

PNP

Single

260mW

-

SWITCHING

PNP - Pre-Biased

50V

100mA

15 @ 5mA 10V

500nA

250mV @ 1mA, 10mA

50V

-

50V

-

15

4.7 k Ω

100mA

4.7 k Ω

-

No

ROHS3 Compliant

Lead Free

ACTIVE (Last Updated: 1 week ago)

YES

e3

Tin (Sn)

Halogen Free

-

-

-

-

-

-

-

-

-

-

-

-

-

DTA114EMT2L vs DTA143EM3T5G
DTA143ZCA-TP

Micro Commercial Co

12 Weeks

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

Tape & Reel (TR)

2004

yes

Active

1 (Unlimited)

3

-

EAR99

-

-

BUILT IN BAIS RESISTOR RATIO IS 10

-

BIP General Purpose Small Signal

-

-

DUAL

GULL WING

260

-

10

DTA143Z

3

1

-

-

-

-

SWITCHING

PNP - Pre-Biased

-

-

80 @ 10mA 5V

500nA

300mV @ 250μA, 5mA

-

250MHz

-

250MHz

-

4.7 k Ω

-

47 k Ω

-

-

ROHS3 Compliant

-

-

YES

e3

Matte Tin (Sn)

-

SILICON

R-PDSO-G3

Not Qualified

SINGLE WITH BUILT-IN RESISTOR

200mW

PNP

50V

100mA

0.2W

-

-

-

-

DTA114EMT2L vs DTA143ZCA-TP
DTA143EET1G

ON Semiconductor

2 Weeks

-

Surface Mount

SC-75, SOT-416

3

Tape & Reel (TR)

2006

yes

Active

1 (Unlimited)

3

-

EAR99

150°C

-55°C

BUILT-IN BIAS RESISTOR RATIO IS 1

-

BIP General Purpose Small Signal

-50V

200mW

DUAL

GULL WING

260

-100mA

40

DTA143

3

1

PNP

Single

200mW

-

SWITCHING

PNP - Pre-Biased

50V

100mA

15 @ 5mA 10V

500nA

250mV @ 1mA, 10mA

50V

-

-

-

15

4.7 k Ω

100mA

4.7 k Ω

-

No

ROHS3 Compliant

Lead Free

ACTIVE (Last Updated: 4 days ago)

YES

e3

Tin (Sn)

Halogen Free

-

-

-

-

-

-

-

-

-

250mV

900μm

1.65mm

900μm

DTA114EMT2L vs DTA143EET1G