DALLAS DS1220Y-200IND

Name: DS1220Y-200IND
Brand: DALLAS
SKU: 6361218-DS1220Y-200IND
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: DS1220Y-200IND

Manufacturer:: DALLAS

Ventron No:: 6361218-DS1220Y-200IND

Description:

ECAD Model:

Datasheet:: DS1220Y-200IND

Specifications

DALLAS DS1220Y-200IND technical specifications, attributes, parameters and parts with similar specifications to DALLAS DS1220Y-200IND .

Write Cycle Time - Word, Page:
200ns
Voltage - Supply:
4.5 V ~ 5.5 V
Technology:
NVSRAM (Non-Volatile SRAM)
Supplier Device Package:
24-EDIP
Series:
-
Packaging:
Tube
Package / Case:
24-DIP Module (0.600", 15.24mm)
Operating Temperature:
-40°C ~ 85°C (TA)
Mounting Type:
Through Hole
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Memory Type:
Non-Volatile
Memory Size:
16Kb (2K x 8)
Memory Interface:
Parallel
Memory Format:
NVSRAM
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Detailed Description:
NVSRAM (Non-Volatile SRAM) Memory IC 16Kb (2K x 8) Parallel 200ns 24-EDIP
Base Part Number:
DS1220Y
Access Time:
200ns

Description

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DS1220Y-200IND More Descriptions

IC NVSRAM 16KBIT 200NS 24EDIP / NVRAM NVSRAM Parallel 16Kbit 5V 24-Pin EDIP
Memory; 16k Nonvolatile SRAM; 200 ns; 5 V (Typ.); 85 mA; 200 ns; 200 ns; 1.5 V
RAM NV 16K-200NS IND LEAD FREE

Certification