DRDNB16W-7

Diodes Incorporated DRDNB16W-7

Part Number:
DRDNB16W-7
Manufacturer:
Diodes Incorporated
Ventron No:
2471285-DRDNB16W-7
Description:
TRANS PREBIAS NPN/DIODE SOT363
ECAD Model:
Datasheet:
DRDNB16W-7

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Specifications
Diodes Incorporated DRDNB16W-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DRDNB16W-7.
  • Factory Lead Time
    19 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    6-TSSOP, SC-88, SOT-363
  • Number of Pins
    6
  • Weight
    6.010099mg
  • Packaging
    Tape & Reel (TR)
  • Published
    2008
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Subcategory
    BIP General Purpose Small Signal
  • Voltage - Rated DC
    50V
  • Max Power Dissipation
    200mW
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    600mA
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    DRDNB16
  • Pin Count
    6
  • Max Output Current
    600mA
  • Operating Supply Voltage
    50V
  • Number of Elements
    1
  • Polarity
    NPN
  • Element Configuration
    Single
  • Transistor Application
    SWITCHING
  • Transistor Type
    NPN - Pre-Biased Diode
  • Collector Emitter Voltage (VCEO)
    300mV
  • Max Collector Current
    600mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    56 @ 50mA 5V
  • Current - Collector Cutoff (Max)
    500nA
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 2.5mA, 50mA
  • Collector Emitter Breakdown Voltage
    50V
  • Transition Frequency
    200MHz
  • Max Breakdown Voltage
    50V
  • Frequency - Transition
    200MHz
  • Emitter Base Voltage (VEBO)
    5V
  • hFE Min
    56
  • Resistor - Base (R1)
    1 k Ω
  • Continuous Collector Current
    600mA
  • Resistor - Emitter Base (R2)
    10 k Ω
  • Height
    1mm
  • Length
    2.2mm
  • Width
    1.35mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
DRDNB16W-7 Overview
This product is manufactured by Diodes Incorporated and belongs to the category of Transistors - Bipolar (BJT) - Single, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet DRDNB16W-7 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of DRDNB16W-7. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
DRDNB16W-7 More Descriptions
Trans Digital BJT NPN 50V 600mA 200mW 6-Pin SOT-363 T/R / TRANS PREBIAS NPN/DIODE SOT363
DRD Series 50 V 600 mA Surface Mount NPN Complex Array for Relay Driver -SOT-363
56@50mA,5V 1 NPN - Pre Biased 200mW 600mA 50V 500nA SOT-363-6(SC-70-6) Digital Transistors ROHS
Rf Transistor, 60V, 0.6A, Sot-363 Rohs Compliant: Yes |Diodes Inc. DRDNB16W-7
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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