Panasonic Electronic Components DRA3144E0L
- Part Number:
- DRA3144E0L
- Manufacturer:
- Panasonic Electronic Components
- Ventron No:
- 2847336-DRA3144E0L
- Description:
- TRANS PREBIAS PNP 100MW SSSMINI3
- Datasheet:
- DRA3144E0L
Panasonic Electronic Components DRA3144E0L technical specifications, attributes, parameters and parts with similar specifications to Panasonic Electronic Components DRA3144E0L.
- Factory Lead Time10 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSOT-723
- Number of Pins3
- PackagingTape & Reel (TR)
- Published2016
- Part StatusDiscontinued
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Additional FeatureBUILT IN BIAS RESISITANCE RATIO 1
- HTS Code8541.21.00.95
- Max Power Dissipation100mW
- Terminal PositionDUAL
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codeunknown
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberDRA3144
- Number of Elements1
- PolarityPNP
- Element ConfigurationSingle
- Transistor ApplicationSWITCHING
- Transistor TypePNP - Pre-Biased
- Collector Emitter Voltage (VCEO)250mV
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA 10V
- Current - Collector Cutoff (Max)500nA
- Vce Saturation (Max) @ Ib, Ic250mV @ 500μA, 10mA
- Collector Emitter Breakdown Voltage50V
- Collector Emitter Saturation Voltage250mV
- Max Breakdown Voltage50V
- Emitter Base Voltage (VEBO)-6V
- Resistor - Base (R1)47 k Ω
- Continuous Collector Current-100mA
- Resistor - Emitter Base (R2)47 k Ω
- Height500μm
- Length1.2mm
- RoHS StatusRoHS Compliant
DRA3144E0L Overview
This product is manufactured by Panasonic Electronic Components and belongs to the category of Transistors - Bipolar (BJT) - Single, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet DRA3144E0L or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of DRA3144E0L. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Panasonic Electronic Components and belongs to the category of Transistors - Bipolar (BJT) - Single, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet DRA3144E0L or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of DRA3144E0L. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
DRA3144E0L More Descriptions
SC,TRANSISTOR WITH BUILT-IN RESISTORS / PNP SINGLE, FOR DIGITAL CIRCUITS, VCEO:50V, IC:100MA
Bipolar Transistors - Pre-Biased TRANS W/ BLT-IN RES FLT LD 1.2x1.2mm
Reel / Transistor with Built-in Resistors
TRANS PREBIAS PNP 100MW SSSMINI3
French Electronic Distributor since 1988
Bipolar Transistors - Pre-Biased TRANS W/ BLT-IN RES FLT LD 1.2x1.2mm
Reel / Transistor with Built-in Resistors
TRANS PREBIAS PNP 100MW SSSMINI3
French Electronic Distributor since 1988
The three parts on the right have similar specifications to DRA3144E0L.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsPackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeMax Operating TemperatureMin Operating TemperatureAdditional FeatureHTS CodeMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Base Part NumberNumber of ElementsPolarityElement ConfigurationTransistor ApplicationTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageMax Breakdown VoltageEmitter Base Voltage (VEBO)Resistor - Base (R1)Continuous Collector CurrentResistor - Emitter Base (R2)HeightLengthRoHS StatusTransistor Element MaterialWidthView Compare
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DRA3144E0L10 WeeksSurface MountSurface MountSOT-7233Tape & Reel (TR)2016Discontinued1 (Unlimited)3EAR99150°C-55°CBUILT IN BIAS RESISITANCE RATIO 18541.21.00.95100mWDUALFLATNOT SPECIFIEDunknownNOT SPECIFIEDDRA31441PNPSingleSWITCHINGPNP - Pre-Biased250mV100mA80 @ 5mA 10V500nA250mV @ 500μA, 10mA50V250mV50V-6V47 k Ω-100mA47 k Ω500μm1.2mmRoHS Compliant---
-
10 WeeksSurface MountSurface MountSOT-7233Tape & Reel (TR)-Obsolete1 (Unlimited)3EAR99150°C-BUILT IN BIAS RESISTOR RATIO IS 108541.21.00.95100mWDUALGULL WINGNOT SPECIFIEDunknownNOT SPECIFIEDDRA31521PNPSingleSWITCHINGPNP - Pre-Biased-50V100mA20 @ 5mA 10V500nA250mV @ 500μA, 10mA50V-250mV50V-510 Ω-100mA5.1 k Ω470μm1.2mmRoHS CompliantSILICON800μm
-
10 WeeksSurface MountSurface MountSOT-7233Tape & Reel (TR)-Discontinued1 (Unlimited)3EAR99150°C-BUILT IN BIAS RESISTOR RATIO IS 18541.21.00.95100mWDUALFLATNOT SPECIFIEDunknownNOT SPECIFIEDDRA31151PNPSingleSWITCHINGPNP - Pre-Biased-50V100mA80 @ 5mA 10V500nA250mV @ 500μA, 10mA50V-250mV50V-100 k Ω-100mA100 k Ω470μm1.2mmRoHS CompliantSILICON800μm
-
10 WeeksSurface MountSurface MountSOT-7233Tape & Reel (TR)2009Discontinued1 (Unlimited)3EAR99150°C-BUILT IN BIAS RESISTOR RATIO IS 0.218541.21.00.95100mWDUALGULL WINGNOT SPECIFIEDunknownNOT SPECIFIEDDRA31441PNPSingleSWITCHINGPNP - Pre-Biased-50V100mA30 @ 5mA 10V500nA250mV @ 500μA, 10mA50V-250mV50V-47 k Ω-100mA10 k Ω470μm1.2mmRoHS CompliantSILICON800μm
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