Diodes Incorporated DMN3018SSD-13

Name: DMN3018SSD-13
Brand: Diodes Incorporated
SKU: 2473508-DMN3018SSD-13
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: DMN3018SSD-13

Manufacturer:: Diodes Incorporated

Ventron No:: 2473508-DMN3018SSD-13

Description:: MOSFET 2N-CH 30V 6.7A 8SO

ECAD Model:

Datasheet:: DMN3018SSD-13

Specifications

Diodes Incorporated DMN3018SSD-13 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMN3018SSD-13.

Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Weight
73.992255mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2013
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Additional Feature
HIGH RELIABILITY
Subcategory
FET General Purpose Power
Max Power Dissipation
1.5W
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
40
Reference Standard
AEC-Q101
Number of Elements
2
Number of Channels
2
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Turn On Delay Time
4.3 ns
FET Type
2 N-Channel (Dual)
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
22m Ω @ 10A, 10V
Vgs(th) (Max) @ Id
2.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
697pF @ 15V
Gate Charge (Qg) (Max) @ Vgs
13.2nC @ 10V
Rise Time
4.4ns
Drain to Source Voltage (Vdss)
30V
Fall Time (Typ)
4.1 ns
Turn-Off Delay Time
20.1 ns
Continuous Drain Current (ID)
6.7A
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
30V
Pulsed Drain Current-Max (IDM)
60A
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Logic Level Gate
Height
1.5mm
Length
4.95mm
Width
3.95mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant

Description

DMN3018SSD-13 Overview
This product is manufactured by Diodes Incorporated and belongs to the category of obsolete (EOL) components. The images we provide are for reference only, for detailed product information please see specification sheet DMN3018SSD-13 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of DMN3018SSD-13. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

DMN3018SSD-13 More Descriptions

Dual N-Channel 30 V 30 mOhm 6 nC 1.5 W Silicon Surface Mount Mosfet - SOIC-8
Mosfet, Dual, N-Ch, 30V, 8.7A Rohs Compliant: Yes |Diodes Inc. DMN3018SSD-13
Trans MOSFET N-CH 30V 6.7A 8-Pin SO T/R / MOSFET 2N-CH 30V 6.7A 8SO
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGSDiodes Inc SCT
MOSFET 30V Dual N-Ch Enh 22mOhm 10V 6.7A
Power Field-Effect Transistor, 6.7A I(D), 30V, 0.022ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET BVDSS: 31V~40V SO-8 T&R 2.5K

Product Comparison

The three parts on the right have similar specifications to DMN3018SSD-13.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Subcategory

Max Power Dissipation

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Reference Standard

Number of Elements

Number of Channels

Element Configuration

Operating Mode

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

FET Technology

FET Feature

Height

Length

Width

REACH SVHC

RoHS Status

Technology

Power Dissipation-Max

Power Dissipation

Current - Continuous Drain (Id) @ 25°C

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Max Junction Temperature (Tj)

Terminal Position

Pin Count

Radiation Hardening

View Compare
DMN3018SSD-13

Diodes Incorporated

15 Weeks

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

73.992255mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2013

e3

yes

Active

1 (Unlimited)

8

EAR99

Matte Tin (Sn)

HIGH RELIABILITY

FET General Purpose Power

1.5W

GULL WING

260

40

AEC-Q101

2

2

Single

ENHANCEMENT MODE

4.3 ns

2 N-Channel (Dual)

SWITCHING

22m Ω @ 10A, 10V

2.1V @ 250μA

697pF @ 15V

13.2nC @ 10V

4.4ns

30V

4.1 ns

20.1 ns

6.7A

20V

30V

60A

METAL-OXIDE SEMICONDUCTOR

Logic Level Gate

1.5mm

4.95mm

3.95mm

No SVHC

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-
DMN3023L-7

Diodes Incorporated

15 Weeks

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

-

-

-55°C~150°C TJ

Tape & Reel (TR)

2015

e3

yes

Active

1 (Unlimited)

-

EAR99

Matte Tin (Sn)

-

-

-

-

NOT SPECIFIED

NOT SPECIFIED

-

-

1

-

-

17 ns

N-Channel

-

25m Ω @ 4A, 10V

1.8V @ 250μA

873pF @ 15V

18.4nC @ 10V

-

-

-

231 ns

6.2A

20V

30V

-

-

-

1.1mm

-

-

-

ROHS3 Compliant

MOSFET (Metal Oxide)

900mW Ta

900mW

6.2A Ta

2.5V 10V

±20V

150°C

-

-

-

DMN3018SSD-13 vs DMN3023L-7
DMN3067LW-13

Diodes Incorporated

15 Weeks

Surface Mount

Surface Mount

SC-70, SOT-323

-

6.010099mg

-

-55°C~150°C TJ

Tape & Reel (TR)

2014

e3

-

Active

1 (Unlimited)

-

EAR99

Matte Tin (Sn)

-

-

-

-

260

30

-

-

1

Single

-

3.8 ns

N-Channel

-

67m Ω @ 2.5A, 4.5V

1.5V @ 250μA

447pF @ 10V

4.6nC @ 4.5V

5.2ns

30V

6.1 ns

15 ns

2.6A

12V

-

-

-

-

-

-

-

-

ROHS3 Compliant

MOSFET (Metal Oxide)

500mW Ta

-

2.6A Ta

2.5V 4.5V

±12V

-

-

-

-

DMN3018SSD-13 vs DMN3067LW-13
DMN3050S-7

Diodes Incorporated

-

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

7.994566mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2008

e3

yes

Obsolete

1 (Unlimited)

3

EAR99

Matte Tin (Sn)

HIGH RELIABILITY

-

-

GULL WING

260

40

-

1

1

Single

ENHANCEMENT MODE

-

N-Channel

SWITCHING

35m Ω @ 5.2A, 10V

3V @ 250μA

390pF @ 15V

-

-

-

-

-

5.2A

20V

30V

20A

-

-

1mm

2.9mm

1.3mm

-

ROHS3 Compliant

MOSFET (Metal Oxide)

1.4W Ta

1.4W

5.2A Ta

4.5V 10V

±20V

-

DUAL

3

No

DMN3018SSD-13 vs DMN3050S-7