Diodes Incorporated DMB53D0UDW-7
- Part Number:
- DMB53D0UDW-7
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 3072210-DMB53D0UDW-7
- Description:
- MOSFET NMOS NPN TRANS SOT-363
- Datasheet:
- DMB53D0UDW-7
Diodes Incorporated DMB53D0UDW-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMB53D0UDW-7.
- Factory Lead Time18 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case6-TSSOP, SC-88, SOT-363
- Number of Pins6
- Weight6.010099mg
- PackagingTape & Reel (TR)
- Published2009
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- ApplicationsGeneral Purpose
- Voltage - Rated45V NPN 50V N-Channel
- Additional FeatureHIGH RELIABILITY
- SubcategoryOther Transistors
- Current Rating (Amps)100mA PNP 160mA N-Channel
- Max Power Dissipation250mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating160mA
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberDMB53D0U
- Pin Count6
- Qualification StatusNot Qualified
- Number of Elements1
- Number of Channels1
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Transistor ApplicationSWITCHING
- Drain to Source Voltage (Vdss)50V
- Transistor TypeNPN, N-Channel
- Continuous Drain Current (ID)160mA
- Gate to Source Voltage (Vgs)12V
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- DC Current Gain-Min (hFE)200
- Drain to Source Resistance5Ohm
- VCEsat-Max0.3 V
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
Diodes Inc. Transistors - Special Purpose DMB53D0UDW-7 is a MOSFET N-Channel NPN Enhancement Mode transistor. It is designed for use in high-speed switching applications, such as power management, motor control, and audio/video switching. It features a low on-resistance of 0.0053 Ohms, a low gate-source capacitance of 0.0025 pF, and a high breakdown voltage of 500V. It is also RoHS compliant and has a maximum operating temperature of 150°C. This transistor is suitable for use in a wide range of applications, including power supplies, motor control, and audio/video switching.
DMB53D0UDW-7 More Descriptions
N-Channel Enhancement Mode MOSFET Plus PNP Transistor Automotive 6-Pin SOT-363 T/R
DMB53D0UDW series 50 V 4 Ohm N-Channel Mosfet NPN Transistor - SOT-363
Transistor, Npn/N-Ch, 50V, 0.16A, Sot363 Rohs Compliant: Yes |Diodes Inc. DMB53D0UDW-7
DMB53D0UDW series 50 V 4 Ohm N-Channel Mosfet NPN Transistor - SOT-363
Transistor, Npn/N-Ch, 50V, 0.16A, Sot363 Rohs Compliant: Yes |Diodes Inc. DMB53D0UDW-7
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