DGD2108S8-13

Diodes Incorporated DGD2108S8-13

Part Number:
DGD2108S8-13
Manufacturer:
Diodes Incorporated
Ventron No:
3735183-DGD2108S8-13
Description:
IC GATE DRVR HALF-BRIDGE 8SO
ECAD Model:
Datasheet:
DGD2108

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Specifications
Diodes Incorporated DGD2108S8-13 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DGD2108S8-13.
  • Factory Lead Time
    22 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Number of Pins
    8
  • Operating Temperature
    -40°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2016
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    3 (168 Hours)
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Voltage - Supply
    10V~20V
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Max Output Current
    600mA
  • Input Type
    Non-Inverting
  • Rise / Fall Time (Typ)
    100ns 35ns
  • Channel Type
    Independent
  • Number of Drivers
    2
  • Driven Configuration
    Half-Bridge
  • Gate Type
    IGBT, N-Channel MOSFET
  • Current - Peak Output (Source, Sink)
    290mA 600mA
  • Logic Voltage - VIL, VIH
    0.6V 2.5V
  • High Side Voltage - Max (Bootstrap)
    600V
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
Description
DGD2108S8-13 Overview
The Diodes Incorporated brand is well-known in the electronic components industry for its high-quality products and innovative solutions. One of its latest offerings is the PMIC - Gate Drivers chip, which falls under the PMIC - Gate Drivers category. This chip, with its 8-SOIC (0.154, 3.90mm Width) package, is designed to provide efficient and reliable performance in a compact size. Its operating temperature range of -40°C~150°C TJ makes it suitable for use in a wide range of environments and applications. In terms of industry standards, this chip meets the JESD-609 Code e3, ensuring its compliance with industry regulations and guidelines. It is also currently in an active status, indicating its availability and ongoing production. The Moisture Sensitivity Level (MSL) of 3 (168 Hours) further adds to its reliability, making it suitable for use in demanding and harsh environments. The chip's terminal finish is Matte Tin (Sn), which offers excellent solderability and corrosion resistance. Its peak reflow temperature is not specified, indicating its versatility and ability to withstand various reflow processes. With a maximum output current of 600mA, this chip can effectively drive a variety of loads. Furthermore, it features two drivers, making it suitable for applications that require multiple drivers. The logic voltage levels for this chip are VIL (0.6V) and VIH (2.5V), providing flexibility and compatibility with a wide range of logic circuits. Overall, the Diodes Incorporated PMIC - Gate Drivers chip offers exceptional performance, reliability, and versatility, making it a top choice for electronic design engineers.

DGD2108S8-13 Features
Embedded in the Tape & Reel (TR) package
2 drivers
Employing a gate type of IGBT, N-Channel MOSFET
8 pins
High-side voltage - Max (Bootstrap) of 600V

DGD2108S8-13 Applications
There are a lot of Diodes Incorporated DGD2108S8-13 gate drivers applications.

Active Clamp Flyback or Forward and Synchronous Rectifier
Uninterruptible Power Supplies (UPS)
Driving GaN Power Transistors used in Full or Half?Bridge, LLC,
High-speed communications
Video amplifiers
PCMCIA applications
Commercial and agricultural vehicles (CAV)
A/D drivers
Digitally controlled power supplies
Power factor correction (PFC) circuits
DGD2108S8-13 More Descriptions
MOSFET DRVR 0.29A/0.6A 2-OUT Hi/Lo Side Non-Inv 8-Pin SOIC T/R
MOSFET/IGBT DRIVER, HALF BRIDGE, SOIC-8
HB-GATE DRIVER 600V 600mA SO-8
HALF-BRIDGE GATE DRIVER IN SO-8
MOSFET/IGBT DRIVER, HALF BRIDGE, SOIC-8; Driver Configuration: Half Bridge; Peak Output Current: -; Supply Voltage Min: 10V; Supply Voltage Max: 20V; Driver Case Style: SOIC; No. of Pins: 8Pins; Input Delay: 220ns; Output Delay: 200ns; Operating Temperature Min: -40°C; Operating Temperature Max: 125°C; Product Range: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2019)
Product Comparison
The three parts on the right have similar specifications to DGD2108S8-13.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    ECCN Code
    Terminal Finish
    Voltage - Supply
    Peak Reflow Temperature (Cel)
    Reflow Temperature-Max (s)
    Max Output Current
    Input Type
    Rise / Fall Time (Typ)
    Channel Type
    Number of Drivers
    Driven Configuration
    Gate Type
    Current - Peak Output (Source, Sink)
    Logic Voltage - VIL, VIH
    High Side Voltage - Max (Bootstrap)
    REACH SVHC
    RoHS Status
    Pbfree Code
    View Compare
  • DGD2108S8-13
    DGD2108S8-13
    22 Weeks
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    -40°C~150°C TJ
    Tape & Reel (TR)
    2016
    e3
    Active
    3 (168 Hours)
    EAR99
    Matte Tin (Sn)
    10V~20V
    NOT SPECIFIED
    NOT SPECIFIED
    600mA
    Non-Inverting
    100ns 35ns
    Independent
    2
    Half-Bridge
    IGBT, N-Channel MOSFET
    290mA 600mA
    0.6V 2.5V
    600V
    No SVHC
    ROHS3 Compliant
    -
    -
  • DGD21814S14-13
    22 Weeks
    -
    Surface Mount
    14-SOIC (0.154, 3.90mm Width)
    -
    -40°C~150°C TJ
    Tape & Reel (TR)
    2016
    e3
    Active
    3 (168 Hours)
    EAR99
    Matte Tin (Sn)
    10V~20V
    NOT SPECIFIED
    NOT SPECIFIED
    -
    Non-Inverting
    40ns 20ns
    Independent
    2
    Half-Bridge
    IGBT, N-Channel MOSFET
    1.9A 2.3A
    0.8V 2.5V
    600V
    -
    ROHS3 Compliant
    yes
  • DGD21844S14-13
    22 Weeks
    -
    Surface Mount
    14-SOIC (0.154, 3.90mm Width)
    -
    -40°C~150°C TJ
    Tape & Reel (TR)
    -
    e3
    Active
    3 (168 Hours)
    EAR99
    Matte Tin (Sn)
    10V~20V
    NOT SPECIFIED
    NOT SPECIFIED
    -
    Non-Inverting
    40ns 20ns
    Synchronous
    2
    Half-Bridge
    IGBT, N-Channel MOSFET
    1.4A 1.8A
    0.8V 2.5V
    600V
    -
    ROHS3 Compliant
    yes
  • DGD2106S8-13
    8 Weeks
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    -40°C~150°C TJ
    Tape & Reel (TR)
    2016
    e3
    Not For New Designs
    3 (168 Hours)
    EAR99
    Matte Tin (Sn)
    10V~20V
    NOT SPECIFIED
    NOT SPECIFIED
    600mA
    Non-Inverting
    100ns 35ns
    Independent
    2
    Half-Bridge
    IGBT, N-Channel MOSFET
    290mA 600mA
    0.6V 2.5V
    600V
    No SVHC
    ROHS3 Compliant
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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