IXYS DE475-102N21A
- Part Number:
- DE475-102N21A
- Manufacturer:
- IXYS
- Ventron No:
- 5524747-DE475-102N21A
- Description:
- RF Power MOSFET
- Datasheet:
- DE475-102N21A
IXYS DE475-102N21A technical specifications, attributes, parameters and parts with similar specifications to IXYS DE475-102N21A.
- HTS8541.29.00.95
- Channel ModeEnhancement
- Number of Elements per Chip1
- Maximum Drain Source Voltage (V)1000
- Maximum Gate Source Voltage (V)±20
- Maximum Continuous Drain Current (A)24
- Maximum Drain Source Resistance (mOhm)450@15V
- Typical Gate Charge @ Vgs (nC)155@10V
- Typical Input Capacitance @ Vds (pF)5500@800V
- Typical Reverse Transfer Capacitance @ Vds (pF)52@800V
- Typical Output Capacitance @ Vds (pF)190@800V
- Maximum Power Dissipation (mW)1800000
- Typical Turn-Off Delay Time (ns)5
- Typical Turn-On Delay Time (ns)5
- Minimum Operating Temperature (°C)-55
- Maximum Operating Temperature (°C)175
- MilitaryNo
- MountingSurface Mount
- Package Height3.18
- Package Length21.08
- Package Width23.24
- PCB changed6
- Part StatusAcquired
- Pin Count6
- ConfigurationSingle Quad Source
- Channel TypeN
- RoHS StatusRoHS Compliant
Description: The IXYS DE475-102N21A is a N-Channel RF FET transistor with a maximum drain-source voltage of 1000V and a maximum drain current of 24A. It is housed in a 6-pin TO-247 package and is designed for use in RF applications.
Features:
- N-Channel RF FET transistor
- Maximum drain-source voltage of 1000V
- Maximum drain current of 24A
- 6-pin TO-247 package
- Designed for use in RF applications
Applications: The IXYS DE475-102N21A is suitable for use in RF applications such as RF power amplifiers, RF switches, and RF signal processing. It can also be used in high-voltage switching applications.
Features:
- N-Channel RF FET transistor
- Maximum drain-source voltage of 1000V
- Maximum drain current of 24A
- 6-pin TO-247 package
- Designed for use in RF applications
Applications: The IXYS DE475-102N21A is suitable for use in RF applications such as RF power amplifiers, RF switches, and RF signal processing. It can also be used in high-voltage switching applications.
DE475-102N21A More Descriptions
Trans RF MOSFET N-CH 1000V 24A 6-Pin(4 2Tab)
RF MOSFET N-CHANNEL DE475
Rf Mosfet, N Channel, 1Kv, De-475; Drain Source Voltage Vds:1Kv; Continuous Drain Current Id:24A; Power Dissipation:1.8Kw; Operating Frequency Min:-; Operating Frequency Max:30Mhz; No. Of Pins:6Pins; Operating Temperature Max:175°C Rohs Compliant: Yes |Ixys Rf DE475-102N21A
RF MOSFET N-CHANNEL DE475
Rf Mosfet, N Channel, 1Kv, De-475; Drain Source Voltage Vds:1Kv; Continuous Drain Current Id:24A; Power Dissipation:1.8Kw; Operating Frequency Min:-; Operating Frequency Max:30Mhz; No. Of Pins:6Pins; Operating Temperature Max:175°C Rohs Compliant: Yes |Ixys Rf DE475-102N21A
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