DE475-102N21A

IXYS DE475-102N21A

Part Number:
DE475-102N21A
Manufacturer:
IXYS
Ventron No:
5524747-DE475-102N21A
Description:
RF Power MOSFET
ECAD Model:
Datasheet:
DE475-102N21A

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Specifications
IXYS DE475-102N21A technical specifications, attributes, parameters and parts with similar specifications to IXYS DE475-102N21A.
  • HTS
    8541.29.00.95
  • Channel Mode
    Enhancement
  • Number of Elements per Chip
    1
  • Maximum Drain Source Voltage (V)
    1000
  • Maximum Gate Source Voltage (V)
    ±20
  • Maximum Continuous Drain Current (A)
    24
  • Maximum Drain Source Resistance (mOhm)
    450@15V
  • Typical Gate Charge @ Vgs (nC)
    155@10V
  • Typical Input Capacitance @ Vds (pF)
    5500@800V
  • Typical Reverse Transfer Capacitance @ Vds (pF)
    52@800V
  • Typical Output Capacitance @ Vds (pF)
    190@800V
  • Maximum Power Dissipation (mW)
    1800000
  • Typical Turn-Off Delay Time (ns)
    5
  • Typical Turn-On Delay Time (ns)
    5
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    175
  • Military
    No
  • Mounting
    Surface Mount
  • Package Height
    3.18
  • Package Length
    21.08
  • Package Width
    23.24
  • PCB changed
    6
  • Part Status
    Acquired
  • Pin Count
    6
  • Configuration
    Single Quad Source
  • Channel Type
    N
  • RoHS Status
    RoHS Compliant
Description
Description: The IXYS DE475-102N21A is a N-Channel RF FET transistor with a maximum drain-source voltage of 1000V and a maximum drain current of 24A. It is housed in a 6-pin TO-247 package and is designed for use in RF applications.

Features:
- N-Channel RF FET transistor
- Maximum drain-source voltage of 1000V
- Maximum drain current of 24A
- 6-pin TO-247 package
- Designed for use in RF applications

Applications: The IXYS DE475-102N21A is suitable for use in RF applications such as RF power amplifiers, RF switches, and RF signal processing. It can also be used in high-voltage switching applications.
DE475-102N21A More Descriptions
Trans RF MOSFET N-CH 1000V 24A 6-Pin(4 2Tab)
RF MOSFET N-CHANNEL DE475
Rf Mosfet, N Channel, 1Kv, De-475; Drain Source Voltage Vds:1Kv; Continuous Drain Current Id:24A; Power Dissipation:1.8Kw; Operating Frequency Min:-; Operating Frequency Max:30Mhz; No. Of Pins:6Pins; Operating Temperature Max:175°C Rohs Compliant: Yes |Ixys Rf DE475-102N21A
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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