GeneSiC Semiconductor DB105G
- Part Number:
- DB105G
- Manufacturer:
- GeneSiC Semiconductor
- Ventron No:
- 2410913-DB105G
- Description:
- DIODE BRIDGE 600V 1A DB
- ECAD Model:
-
- Datasheet:
- DB105G
GeneSiC Semiconductor DB105G technical specifications, attributes, parameters and parts with similar specifications to GeneSiC Semiconductor DB105G.
- Lifecycle StatusPRODUCTION (Last Updated: 6 months ago)
- Factory Lead Time4 Weeks
- Mounting TypeThrough Hole
- Package / Case4-EDIP (0.321, 8.15mm)
- Surface MountNO
- Number of Pins4
- Diode Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingBulk
- Published2010
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- ECCN CodeEAR99
- TechnologyStandard
- Terminal PositionDUAL
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Number of Elements4
- Diode TypeSingle Phase
- Current - Reverse Leakage @ Vr10μA @ 600V
- Voltage - Forward (Vf) (Max) @ If1.1V @ 1A
- Forward Current1A
- Max Reverse Leakage Current5μA
- Max Surge Current30A
- Output Current-Max1A
- Number of Phases1
- Peak Reverse Current5A
- Max Repetitive Reverse Voltage (Vrrm)600V
- Voltage - Peak Reverse (Max)600V
- RoHS StatusRoHS Compliant
DB105G Overview
This device operates from a forward voltage of 1A.Basically, rectifier is a type of electronic component that is available in a 4-EDIP (0.321, 8.15mm) package.There should be a monrectifieroring of the reverse leakage current and rectifier should not be allowed to exceed 5μA.Operating at the temperature of -55°C~150°C TJ ensures its normal operation.The maximum output voltage of 1A can be supported by it.Surge current should be monitored and not be allowed to exceed 30A.There is a peak reverse voltage of 5A which is used to power this device.
DB105G Features
1A forward voltage
forward voltage of 1A
4-EDIP (0.321, 8.15mm) package
operating at a temperature of -55°C~150°C TJ
the maximum output voltage of 1A
peak reverse voltage of 5A
a reverse voltage peak of 5A
DB105G Applications
There are a lot of GeneSiC Semiconductor
DB105G applications of bridge rectifiers.
Controlled avalanche characteristics
Working peak reverse voltages 200 to 1 ,000 volts
Military and other high-reliability applications
High forward surge current capability
Low thermal resistance
Extremely robust construction
Fuse-in-glass diodes design
Electrically isolated aluminum case
Motor controls – Low Voltage and Medium Voltage converters
SCR power bridges for solid state starters
This device operates from a forward voltage of 1A.Basically, rectifier is a type of electronic component that is available in a 4-EDIP (0.321, 8.15mm) package.There should be a monrectifieroring of the reverse leakage current and rectifier should not be allowed to exceed 5μA.Operating at the temperature of -55°C~150°C TJ ensures its normal operation.The maximum output voltage of 1A can be supported by it.Surge current should be monitored and not be allowed to exceed 30A.There is a peak reverse voltage of 5A which is used to power this device.
DB105G Features
1A forward voltage
forward voltage of 1A
4-EDIP (0.321, 8.15mm) package
operating at a temperature of -55°C~150°C TJ
the maximum output voltage of 1A
peak reverse voltage of 5A
a reverse voltage peak of 5A
DB105G Applications
There are a lot of GeneSiC Semiconductor
DB105G applications of bridge rectifiers.
Controlled avalanche characteristics
Working peak reverse voltages 200 to 1 ,000 volts
Military and other high-reliability applications
High forward surge current capability
Low thermal resistance
Extremely robust construction
Fuse-in-glass diodes design
Electrically isolated aluminum case
Motor controls – Low Voltage and Medium Voltage converters
SCR power bridges for solid state starters
DB105G More Descriptions
Bulk Through Hole Single Phase Standard Bridge Rectifier 1.1V @ 1A 10muA @ 600V 600V -55C~150C TJ
600V 1A DB Single Phase Bridge Rectifier
Bridge Rectifiers SI BRIDGE RECT DB-PK 50-1000V 1A600P/420R
Product Description Demo for Development.
Bridge Rectifier, 600V, 1A, Db; No. Of Phases:Single Phase; Repetitive Peak Reverse Voltage:600V; Average Forward Current:1A; Bridge Rectifier Case Style:Dip; No. Of Pins:4Pins; Forward Voltage Max:1.1V; Forward Surge Current:30A Rohs Compliant: Yes |Genesic Semiconductor DB105G
600V 1A DB Single Phase Bridge Rectifier
Bridge Rectifiers SI BRIDGE RECT DB-PK 50-1000V 1A600P/420R
Product Description Demo for Development.
Bridge Rectifier, 600V, 1A, Db; No. Of Phases:Single Phase; Repetitive Peak Reverse Voltage:600V; Average Forward Current:1A; Bridge Rectifier Case Style:Dip; No. Of Pins:4Pins; Forward Voltage Max:1.1V; Forward Surge Current:30A Rohs Compliant: Yes |Genesic Semiconductor DB105G
The three parts on the right have similar specifications to DB105G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsDiode Element MaterialOperating TemperaturePackagingPublishedPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTechnologyTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Number of ElementsDiode TypeCurrent - Reverse Leakage @ VrVoltage - Forward (Vf) (Max) @ IfForward CurrentMax Reverse Leakage CurrentMax Surge CurrentOutput Current-MaxNumber of PhasesPeak Reverse CurrentMax Repetitive Reverse Voltage (Vrrm)Voltage - Peak Reverse (Max)RoHS StatusCurrent - Average Rectified (Io)Supplier Device PackageJESD-609 CodeTerminal FinishAdditional FeatureHTS CodeSubcategoryReach Compliance CodeBase Part NumberPin CountJESD-30 CodeQualification StatusConfigurationNon-rep Pk Forward Current-MaxView Compare
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DB105GPRODUCTION (Last Updated: 6 months ago)4 WeeksThrough Hole4-EDIP (0.321, 8.15mm)NO4SILICON-55°C~150°C TJBulk2010yesActive1 (Unlimited)4EAR99StandardDUALNOT SPECIFIEDNOT SPECIFIED4Single Phase10μA @ 600V1.1V @ 1A1A5μA30A1A15A600V600VRoHS Compliant--------------- -
-6 WeeksSurface Mount4-SMD, Gull Wing----55°C~150°C TJTape & Reel (TR)2016-Active1 (Unlimited)--Standard----Single Phase5μA @ 50V1.1V @ 1A-------50VROHS3 Compliant1A-------------
-
-6 WeeksThrough Hole4-EDIP (0.321, 8.15mm)----55°C~150°C TJTube2016-Active1 (Unlimited)--Standard----Single Phase5μA @ 50V1.1V @ 1A-------50VROHS3 Compliant1ADB-M------------
-
-12 WeeksThrough Hole4-EDIP (0.321, 8.15mm)NO-SILICON-55°C~150°C TJTube2005yesActive1 (Unlimited)4EAR99StandardDUALNOT SPECIFIEDNOT SPECIFIED4Single Phase10μA @ 800V1.1V @ 1A---1A1--800VROHS3 Compliant1A-e3Matte Tin (Sn)UL RECOGNIZED8541.10.00.80Bridge Rectifier Diodesnot_compliantDB1064R-PDIP-T4Not QualifiedBRIDGE, 4 ELEMENTS50A
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Single Phase Bridge Rectifier Standard Through Hole -55°C~150°C TJ 5μA @ 100V 1.1V @ 1A 4-EDIP (0.321, 8.15mm) Tube
-
Single Phase Bridge Rectifier Standard Surface Mount -55°C~150°C TJ 5μA @ 200V 1.1V @ 1A 4-SMD, Gull Wing Tape & Reel (TR)
-
Single Phase Bridge Rectifier Standard Through Hole -55°C~150°C TJ 5μA @ 200V 1.1V @ 1A 4-EDIP (0.321, 8.15mm) Tube
-
Single Phase Bridge Rectifier Standard Surface Mount -55°C~150°C TJ 5μA @ 100V 1.1V @ 1A 4-SMD, Gull Wing Tape & Reel (TR)
-
Single Phase Bridge Rectifier Standard Surface Mount -55°C~150°C TJ 5μA @ 50V 1.1V @ 1A 4-SMD, Gull Wing Tape & Reel (TR)
-
Single Phase Bridge Rectifier Standard Through Hole -55°C~150°C TJ 5μA @ 50V 1.1V @ 1A 4-EDIP (0.321, 8.15mm) Tube
-
Single Phase Bridge Rectifier Standard Surface Mount -55°C~150°C TJ 10μA @ 800V 1.1V @ 1A 4-SMD, Gull Wing Tube
-
Single Phase Bridge Rectifier Standard Through Hole -55°C~150°C TJ 10μA @ 50V 1.1V @ 1A 4-Termination 1-Phase 4-EDIP (0.321, 8.15mm) Tube
-
Single Phase Bridge Rectifier Standard Through Hole -55°C~150°C TJ 10μA @ 800V 1.1V @ 1A 4-Termination 1-Phase 4-EDIP (0.321, 8.15mm) Tube
-
Single Phase Bridge Rectifier Standard Through Hole -55°C~150°C TJ 10μA @ 400V 1.1V @ 1A 4-Termination 1-Phase 4-EDIP (0.321, 8.15mm) Tube
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