Cypress Semiconductor Corp CY7C1663KV18-550BZXC
- Part Number:
- CY7C1663KV18-550BZXC
- Manufacturer:
- Cypress Semiconductor Corp
- Ventron No:
- 3717580-CY7C1663KV18-550BZXC
- Description:
- IC SRAM 144MBIT 550MHZ 165FBGA
- Datasheet:
- CY7C1663KV18-550BZXC
Cypress Semiconductor Corp CY7C1663KV18-550BZXC technical specifications, attributes, parameters and parts with similar specifications to Cypress Semiconductor Corp CY7C1663KV18-550BZXC.
- Factory Lead Time13 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case165-LBGA
- Number of Pins165
- Operating Temperature0°C~70°C TA
- PackagingTray
- Published2003
- JESD-609 Codee1
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations165
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- TechnologySRAM - Synchronous, QDR II
- Voltage - Supply1.7V~1.9V
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)260
- Number of Functions1
- Supply Voltage1.8V
- Terminal Pitch1mm
- Reflow Temperature-Max (s)40
- Base Part NumberCY7C1663
- Pin Count165
- Operating Supply Voltage1.8V
- Supply Voltage-Max (Vsup)1.9V
- Supply Voltage-Min (Vsup)1.7V
- Memory Size144Mb 8M x 18
- Number of Ports2
- Memory TypeVolatile
- Clock Frequency550MHz
- Supply Current-Max1.09mA
- Access Time450 ps
- Memory FormatSRAM
- Memory InterfaceParallel
- Organization8MX18
- Output Characteristics3-STATE
- Memory Width18
- Address Bus Width21b
- Density144 Mb
- Standby Current-Max0.5A
- I/O TypeSEPARATE
- Sync/AsyncSynchronous
- Word Size18b
- Standby Voltage-Min1.7V
- Height Seated (Max)1.4mm
- Length17mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
CY7C1663KV18-550BZXC Overview
This product is a surface mount device with a JESD-609 code of e1. It utilizes SRAM technology, specifically synchronous QDR II . The terminal position is located on the bottom of the device. The operating supply voltage is 1.8V, with a minimum supply voltage of 1.7V. This device is classified as volatile memory, with an access time of 450 ps. The memory interface is parallel and the I/O type is separate.
CY7C1663KV18-550BZXC Features
Package / Case: 165-LBGA
165 Pins
Operating Supply Voltage:1.8V
I/O Type: SEPARATE
CY7C1663KV18-550BZXC Applications
There are a lot of Cypress Semiconductor Corp CY7C1663KV18-550BZXC Memory applications.
supercomputers
networks
hard disk drive (HDD)
printers
eSRAM
Cache memory
cell phones
nonvolatile BIOS memory
personal digital assistants
embedded logic
This product is a surface mount device with a JESD-609 code of e1. It utilizes SRAM technology, specifically synchronous QDR II . The terminal position is located on the bottom of the device. The operating supply voltage is 1.8V, with a minimum supply voltage of 1.7V. This device is classified as volatile memory, with an access time of 450 ps. The memory interface is parallel and the I/O type is separate.
CY7C1663KV18-550BZXC Features
Package / Case: 165-LBGA
165 Pins
Operating Supply Voltage:1.8V
I/O Type: SEPARATE
CY7C1663KV18-550BZXC Applications
There are a lot of Cypress Semiconductor Corp CY7C1663KV18-550BZXC Memory applications.
supercomputers
networks
hard disk drive (HDD)
printers
eSRAM
Cache memory
cell phones
nonvolatile BIOS memory
personal digital assistants
embedded logic
CY7C1663KV18-550BZXC More Descriptions
SRAM Chip Sync Dual 1.8V 144M-Bit 8M x 18 0.45ns 165-Pin FBGA Tray
IC SRAM 144MBIT PARALLEL 165FBGA
SRAM 144Mb 1.8V 550Mhz 8M x 18 QDR II SRAM
IC SRAM 144MBIT PARALLEL 165FBGA
SRAM 144Mb 1.8V 550Mhz 8M x 18 QDR II SRAM
The three parts on the right have similar specifications to CY7C1663KV18-550BZXC.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchReflow Temperature-Max (s)Base Part NumberPin CountOperating Supply VoltageSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeNumber of PortsMemory TypeClock FrequencySupply Current-MaxAccess TimeMemory FormatMemory InterfaceOrganizationOutput CharacteristicsMemory WidthAddress Bus WidthDensityStandby Current-MaxI/O TypeSync/AsyncWord SizeStandby Voltage-MinHeight Seated (Max)LengthRadiation HardeningRoHS StatusSurface MountECCN CodeAdditional FeatureHTS CodeJESD-30 CodeQualification StatusMemory DensityAccess Time (Max)WidthLead FreeTime@Peak Reflow Temperature-Max (s)Nominal Supply CurrentReach Compliance CodeFrequencyPower SuppliesWrite Cycle Time - Word, PageView Compare
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CY7C1663KV18-550BZXC13 WeeksSurface MountSurface Mount165-LBGA1650°C~70°C TATray2003e1Active3 (168 Hours)165Tin/Silver/Copper (Sn/Ag/Cu)SRAM - Synchronous, QDR II1.7V~1.9VBOTTOM26011.8V1mm40CY7C16631651.8V1.9V1.7V144Mb 8M x 182Volatile550MHz1.09mA450 psSRAMParallel8MX183-STATE1821b144 Mb0.5ASEPARATESynchronous18b1.7V1.4mm17mmNoROHS3 Compliant-----------------
-
--Surface Mount176-LQFP--40°C~85°C TATray2003-Obsolete3 (168 Hours)176-SRAM - Dual Port, Synchronous3.135V~3.465VQUAD-13.3V0.5mm-CY7C0852176-3.465V3.135V4.5Mb 128K x 36-Volatile133MHz--SRAMParallel128KX36-36-------1.6mm24mm-ROHS3 CompliantYES3A991.B.2.APIPELINED ARCHITECTURE8542.32.00.41S-PQFP-G176Not Qualified4718592 bit4.4 ns24mmLead Free------
-
-Surface MountSurface Mount172-LFBGA1720°C~70°C TATray2003e1Obsolete3 (168 Hours)172Tin/Silver/Copper (Sn/Ag/Cu)SRAM - Dual Port, Synchronous3.135V~3.465VBOTTOM26013.3V1mm-CY7C08511723.3V3.465V3.135V2Mb 64K x 362Volatile167MHz-4 nsSRAMParallel64KX363-STATE3632b2 Mb0.075ACOMMONSynchronous36b3.14V-15mmNoROHS3 Compliant--PIPELINED ARCHITECTURE------Lead Free40300mA----
-
-Surface MountSurface Mount84-LCC (J-Lead)840°C~70°C TATray2004e3Obsolete3 (168 Hours)84Matte Tin (Sn)SRAM - Dual Port, Asynchronous4.5V~5.5VQUAD26015V--CY7C024845V--64Kb 4K x 162Volatile---SRAMParallel4KX163-STATE1624b64 kb0.015ACOMMONAsynchronous16b-5.08mm--ROHS3 Compliant-EAR99---Not Qualified-55 ns-Lead Free20230mAunknown55GHz5V55ns
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