Cypress Semiconductor Corp CY7C1414BV18-200BZI
- Part Number:
- CY7C1414BV18-200BZI
- Manufacturer:
- Cypress Semiconductor Corp
- Ventron No:
- 3837182-CY7C1414BV18-200BZI
- Description:
- IC SRAM 36MBIT 200MHZ 165FBGA
- Datasheet:
- CY7C141(2,4)BV18
Cypress Semiconductor Corp CY7C1414BV18-200BZI technical specifications, attributes, parameters and parts with similar specifications to Cypress Semiconductor Corp CY7C1414BV18-200BZI.
- Mounting TypeSurface Mount
- Package / Case165-LBGA
- Surface MountYES
- Number of Pins165
- Operating Temperature-40°C~85°C TA
- PackagingTray
- Published2003
- JESD-609 Codee0
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations165
- ECCN Code3A991.B.2.A
- Terminal FinishTin/Lead (Sn/Pb)
- Additional FeaturePIPELINED ARCHITECTURE
- HTS Code8542.32.00.41
- TechnologySRAM - Synchronous, QDR II
- Voltage - Supply1.7V~1.9V
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)220
- Number of Functions1
- Supply Voltage1.8V
- Terminal Pitch1mm
- Reach Compliance Codenot_compliant
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberCY7C1414
- Pin Count165
- Qualification StatusNot Qualified
- Operating Supply Voltage1.8V
- Supply Voltage-Max (Vsup)1.9V
- Supply Voltage-Min (Vsup)1.7V
- Memory Size36Mb 1M x 36
- Memory TypeVolatile
- Clock Frequency200MHz
- Supply Current-Max0.85mA
- Access Time450 ps
- Memory FormatSRAM
- Memory InterfaceParallel
- Organization1MX36
- Output Characteristics3-STATE
- Memory Width36
- Density36 Mb
- Standby Current-Max0.42A
- I/O TypeSEPARATE
- Standby Voltage-Min1.7V
- Height Seated (Max)1.4mm
- Length17mm
- Width15mm
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
CY7C1414BV18-200BZI Overview
The tray packaging for the SRAM - Synchronous, QDR II technology was published in 2003 with a terminal pitch of 1mm and a pin count of 165. This memory format is considered volatile, meaning that it requires a constant power supply to retain its data. The supply voltage ranges from 1.7V to 1.9V, providing efficient power consumption for the device. With a maximum seated height of 1.4mm, this packaging is compact and suitable for various applications. The use of SRAM technology allows for high-speed data processing and retrieval, making it a popular choice for computer systems and other electronic devices. Overall, the tray packaging for this SRAM technology has proven to be a reliable and efficient solution since its release in 2003.
CY7C1414BV18-200BZI Features
Package / Case: 165-LBGA
165 Pins
Operating Supply Voltage:1.8V
Additional Feature:PIPELINED ARCHITECTURE
I/O Type: SEPARATE
CY7C1414BV18-200BZI Applications
There are a lot of Cypress Semiconductor Corp
CY7C1414BV18-200BZI Memory applications.
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
The tray packaging for the SRAM - Synchronous, QDR II technology was published in 2003 with a terminal pitch of 1mm and a pin count of 165. This memory format is considered volatile, meaning that it requires a constant power supply to retain its data. The supply voltage ranges from 1.7V to 1.9V, providing efficient power consumption for the device. With a maximum seated height of 1.4mm, this packaging is compact and suitable for various applications. The use of SRAM technology allows for high-speed data processing and retrieval, making it a popular choice for computer systems and other electronic devices. Overall, the tray packaging for this SRAM technology has proven to be a reliable and efficient solution since its release in 2003.
CY7C1414BV18-200BZI Features
Package / Case: 165-LBGA
165 Pins
Operating Supply Voltage:1.8V
Additional Feature:PIPELINED ARCHITECTURE
I/O Type: SEPARATE
CY7C1414BV18-200BZI Applications
There are a lot of Cypress Semiconductor Corp
CY7C1414BV18-200BZI Memory applications.
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
CY7C1414BV18-200BZI More Descriptions
Obsolete 3-STATE 2003 BOTTOM SRAM Memory -40C~85C TA 1.7V 36Mb 0.42A
IC SRAM 36MBIT PARALLEL 165FBGA
QDR SRAM, 1MX36, 0.45NS
LBGA-165 SRAM ROHS
IC SRAM 36MBIT PARALLEL 165FBGA
QDR SRAM, 1MX36, 0.45NS
LBGA-165 SRAM ROHS
The three parts on the right have similar specifications to CY7C1414BV18-200BZI.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountNumber of PinsOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureHTS CodeTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchReach Compliance CodeTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountQualification StatusOperating Supply VoltageSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeMemory TypeClock FrequencySupply Current-MaxAccess TimeMemory FormatMemory InterfaceOrganizationOutput CharacteristicsMemory WidthDensityStandby Current-MaxI/O TypeStandby Voltage-MinHeight Seated (Max)LengthWidthRoHS StatusLead FreeMountNumber of PortsNominal Supply CurrentAddress Bus WidthSync/AsyncWord SizeRadiation HardeningFrequencyPower SuppliesWrite Cycle Time - Word, PageAccess Time (Max)Output EnableView Compare
-
CY7C1414BV18-200BZISurface Mount165-LBGAYES165-40°C~85°C TATray2003e0Obsolete3 (168 Hours)1653A991.B.2.ATin/Lead (Sn/Pb)PIPELINED ARCHITECTURE8542.32.00.41SRAM - Synchronous, QDR II1.7V~1.9VBOTTOM22011.8V1mmnot_compliantNOT SPECIFIEDCY7C1414165Not Qualified1.8V1.9V1.7V36Mb 1M x 36Volatile200MHz0.85mA450 psSRAMParallel1MX363-STATE3636 Mb0.42ASEPARATE1.7V1.4mm17mm15mmNon-RoHS CompliantContains Lead-------------
-
Surface Mount172-LFBGA-1720°C~70°C TATray2003e1Obsolete3 (168 Hours)172-Tin/Silver/Copper (Sn/Ag/Cu)PIPELINED ARCHITECTURE-SRAM - Dual Port, Synchronous3.135V~3.465VBOTTOM26013.3V1mm-40CY7C0851172-3.3V3.465V3.135V2Mb 64K x 36Volatile167MHz-4 nsSRAMParallel64KX363-STATE362 Mb0.075ACOMMON3.14V-15mm-ROHS3 CompliantLead FreeSurface Mount2300mA32bSynchronous36bNo-----
-
Surface Mount84-LCC (J-Lead)-840°C~70°C TATray2004e3Obsolete3 (168 Hours)84EAR99Matte Tin (Sn)--SRAM - Dual Port, Asynchronous4.5V~5.5VQUAD26015V-unknown20CY7C02484Not Qualified5V--64Kb 4K x 16Volatile---SRAMParallel4KX163-STATE1664 kb0.015ACOMMON-5.08mm--ROHS3 CompliantLead FreeSurface Mount2230mA24bAsynchronous16b-55GHz5V55ns55 ns-
-
Surface Mount100-LQFP-1000°C~70°C TATray2001e0Obsolete3 (168 Hours)100EAR99TIN LEADINTERRUPT FLAG-SRAM - Dual Port, Asynchronous4.5V~5.5VQUAD24015V0.5mmnot_compliant30CY7C0251100Not Qualified5V--144Kb 8K x 18Volatile---SRAMParallel8KX183-STATE18144 kb0.015ACOMMON2V1.6mm14mm-Non-RoHS CompliantContains LeadSurface Mount2300mA13bAsynchronous18b-15GHz5V15ns15 nsYES
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