Cypress Semiconductor Corp CY7C1412KV18-300BZXC
- Part Number:
- CY7C1412KV18-300BZXC
- Manufacturer:
- Cypress Semiconductor Corp
- Ventron No:
- 3230212-CY7C1412KV18-300BZXC
- Description:
- IC SRAM 36MBIT 300MHZ 165FBGA
- Datasheet:
- CY7C1412KV18-300BZXC
Cypress Semiconductor Corp CY7C1412KV18-300BZXC technical specifications, attributes, parameters and parts with similar specifications to Cypress Semiconductor Corp CY7C1412KV18-300BZXC.
- Factory Lead Time6 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case165-LBGA
- Number of Pins165
- Operating Temperature0°C~70°C TA
- PackagingTray
- Published2003
- JESD-609 Codee1
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations165
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- Additional FeaturePIPELINED ARCHITECTURE
- TechnologySRAM - Synchronous, QDR II
- Voltage - Supply1.7V~1.9V
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)260
- Number of Functions1
- Supply Voltage1.8V
- Terminal Pitch1mm
- Reflow Temperature-Max (s)30
- Base Part NumberCY7C1412
- Pin Count165
- Operating Supply Voltage1.8V
- Supply Voltage-Max (Vsup)1.9V
- Supply Voltage-Min (Vsup)1.7V
- Memory Size36Mb 2M x 18
- Number of Ports2
- Nominal Supply Current700mA
- Memory TypeVolatile
- Clock Frequency300MHz
- Access Time450 ps
- Memory FormatSRAM
- Memory InterfaceParallel
- Output Characteristics3-STATE
- Memory Width18
- Address Bus Width40b
- Density36 Mb
- I/O TypeSEPARATE
- Sync/AsyncSynchronous
- Word Size18b
- Standby Voltage-Min1.7V
- Height Seated (Max)1.4mm
- Length15mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
CY7C1412KV18-300BZXC Overview
The manufacturer of this component is Cypress Semiconductor Corp, a company that specializes in producing electronic components. This specific part is a type of Memory chip, which falls under the broader category of Memory products. It has a Moisture Sensitivity Level (MSL) rating of 3, meaning it can withstand exposure to moisture for up to 168 hours. One notable feature of this chip is its PIPELINED ARCHITECTURE, which allows for faster data processing. The terminal position for this chip is located at the bottom, and it has a single function. The distance between each terminal, known as the terminal pitch, is 1mm. The nominal supply current for this chip is 700mA, and it has an access time of 450 picoseconds. The Address Bus Width, which determines the maximum amount of memory that can be accessed, is 40 bits. The density of this chip is 36 megabits, meaning it can store a large amount of data. The maximum height when seated is 1.4mm.
CY7C1412KV18-300BZXC Features
Package / Case: 165-LBGA
165 Pins
Operating Supply Voltage:1.8V
Additional Feature:PIPELINED ARCHITECTURE
I/O Type: SEPARATE
CY7C1412KV18-300BZXC Applications
There are a lot of Cypress Semiconductor Corp CY7C1412KV18-300BZXC Memory applications.
DVD disk buffer
cell phones
eDRAM
multimedia computers
mainframes
personal digital assistants
networks
nonvolatile BIOS memory
eSRAM
supercomputers
The manufacturer of this component is Cypress Semiconductor Corp, a company that specializes in producing electronic components. This specific part is a type of Memory chip, which falls under the broader category of Memory products. It has a Moisture Sensitivity Level (MSL) rating of 3, meaning it can withstand exposure to moisture for up to 168 hours. One notable feature of this chip is its PIPELINED ARCHITECTURE, which allows for faster data processing. The terminal position for this chip is located at the bottom, and it has a single function. The distance between each terminal, known as the terminal pitch, is 1mm. The nominal supply current for this chip is 700mA, and it has an access time of 450 picoseconds. The Address Bus Width, which determines the maximum amount of memory that can be accessed, is 40 bits. The density of this chip is 36 megabits, meaning it can store a large amount of data. The maximum height when seated is 1.4mm.
CY7C1412KV18-300BZXC Features
Package / Case: 165-LBGA
165 Pins
Operating Supply Voltage:1.8V
Additional Feature:PIPELINED ARCHITECTURE
I/O Type: SEPARATE
CY7C1412KV18-300BZXC Applications
There are a lot of Cypress Semiconductor Corp CY7C1412KV18-300BZXC Memory applications.
DVD disk buffer
cell phones
eDRAM
multimedia computers
mainframes
personal digital assistants
networks
nonvolatile BIOS memory
eSRAM
supercomputers
CY7C1412KV18-300BZXC More Descriptions
SRAM - Synchronous, QDR II Memory IC 36Mb (2M x 18) Parallel 300MHz 165-FBGA (13
SRAM Chip Sync Dual 1.8V 36M-Bit 2M x 18 0.45ns 165-Pin FBGA Tray
e1 Surface Mount CY7C1412 Tray ic memory 300MHz 450ps 15mm 700mA
Synchronous SRAM, BGA-165, RoHSCypress Semiconductor SCT
IC SRAM 36MBIT PARALLEL 165FBGA
SRAM 36MB (2Mx18) 1.8v 300MHz QDR II SRAM
SRAM Chip Sync Dual 1.8V 36M-Bit 2M x 18 0.45ns 165-Pin FBGA Tray
e1 Surface Mount CY7C1412 Tray ic memory 300MHz 450ps 15mm 700mA
Synchronous SRAM, BGA-165, RoHSCypress Semiconductor SCT
IC SRAM 36MBIT PARALLEL 165FBGA
SRAM 36MB (2Mx18) 1.8v 300MHz QDR II SRAM
The three parts on the right have similar specifications to CY7C1412KV18-300BZXC.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishAdditional FeatureTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchReflow Temperature-Max (s)Base Part NumberPin CountOperating Supply VoltageSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeNumber of PortsNominal Supply CurrentMemory TypeClock FrequencyAccess TimeMemory FormatMemory InterfaceOutput CharacteristicsMemory WidthAddress Bus WidthDensityI/O TypeSync/AsyncWord SizeStandby Voltage-MinHeight Seated (Max)LengthRadiation HardeningRoHS StatusECCN CodeReach Compliance CodeFrequencyTime@Peak Reflow Temperature-Max (s)Qualification StatusPower SuppliesOrganizationWrite Cycle Time - Word, PageStandby Current-MaxAccess Time (Max)Lead FreeOutput EnableSurface MountPbfree CodeJESD-30 CodeMemory DensityWidthView Compare
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CY7C1412KV18-300BZXC6 WeeksSurface MountSurface Mount165-LBGA1650°C~70°C TATray2003e1Active3 (168 Hours)165Tin/Silver/Copper (Sn/Ag/Cu)PIPELINED ARCHITECTURESRAM - Synchronous, QDR II1.7V~1.9VBOTTOM26011.8V1mm30CY7C14121651.8V1.9V1.7V36Mb 2M x 182700mAVolatile300MHz450 psSRAMParallel3-STATE1840b36 MbSEPARATESynchronous18b1.7V1.4mm15mmNoROHS3 Compliant------------------
-
-Surface MountSurface Mount84-LCC (J-Lead)840°C~70°C TATray2004e3Obsolete3 (168 Hours)84Matte Tin (Sn)-SRAM - Dual Port, Asynchronous4.5V~5.5VQUAD26015V--CY7C024845V--64Kb 4K x 162230mAVolatile--SRAMParallel3-STATE1624b64 kbCOMMONAsynchronous16b-5.08mm--ROHS3 CompliantEAR99unknown55GHz20Not Qualified5V4KX1655ns0.015A55 nsLead Free------
-
-Surface MountSurface Mount100-LQFP1000°C~70°C TATray2001e0Obsolete3 (168 Hours)100TIN LEADINTERRUPT FLAGSRAM - Dual Port, Asynchronous4.5V~5.5VQUAD24015V0.5mm-CY7C02511005V--144Kb 8K x 182300mAVolatile--SRAMParallel3-STATE1813b144 kbCOMMONAsynchronous18b2V1.6mm14mm-Non-RoHS CompliantEAR99not_compliant15GHz30Not Qualified5V8KX1815ns0.015A15 nsContains LeadYES-----
-
--Surface Mount100-LQFP--40°C~85°C TATray-e3/e4Obsolete3 (168 Hours)100MATTE TIN/NICKEL PALLADIUM GOLD-SRAM - Dual Port, Asynchronous4.5V~5.5VQUAD26015V0.5mm--100-5.5V4.5V64Kb 4K x 16--Volatile--SRAMParallel-16------1.6mm14mm-ROHS3 Compliant-unknown-20COMMERCIAL-4KX1625ns-25 ns--YESyesS-PQFP-G10065536 bit14mm
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