Cypress Semiconductor Corp CY7C1381F-133BGC
- Part Number:
- CY7C1381F-133BGC
- Manufacturer:
- Cypress Semiconductor Corp
- Ventron No:
- 3242088-CY7C1381F-133BGC
- Description:
- IC SRAM 18MBIT 133MHZ 119BGA
- Datasheet:
- CY7C1381D/F, 83D/F
Cypress Semiconductor Corp CY7C1381F-133BGC technical specifications, attributes, parameters and parts with similar specifications to Cypress Semiconductor Corp CY7C1381F-133BGC.
- MountThrough Hole
- Mounting TypeSurface Mount
- Package / Case119-BGA
- Number of Pins119
- Operating Temperature0°C~70°C TA
- PackagingTray
- Published2004
- JESD-609 Codee0
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations119
- ECCN Code3A991.B.2.A
- Terminal FinishTin/Lead (Sn/Pb)
- Additional FeatureFLOW-THROUGH ARCHITECTURE
- HTS Code8542.32.00.41
- TechnologySRAM - Synchronous, SDR
- Voltage - Supply3.135V~3.6V
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)220
- Number of Functions1
- Supply Voltage3.3V
- Terminal Pitch1.27mm
- Reach Compliance Codenot_compliant
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberCY7C1381
- Pin Count119
- Qualification StatusNot Qualified
- Operating Supply Voltage3.3V
- Supply Voltage-Max (Vsup)3.6V
- Supply Voltage-Min (Vsup)3.135V
- Memory Size18Mb 512K x 36
- Memory TypeVolatile
- Clock Frequency133MHz
- Supply Current-Max0.21mA
- Access Time6.5ns
- Memory FormatSRAM
- Memory InterfaceParallel
- Organization512KX36
- Output Characteristics3-STATE
- Memory Width36
- Density18 Mb
- Standby Current-Max0.07A
- I/O TypeCOMMON
- Standby Voltage-Min3.14V
- Height Seated (Max)2.4mm
- Length22mm
- Width14mm
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
CY7C1381F-133BGC Overview
The Time@Peak Reflow Temperature-Max (s) for this product is not specified. The Supply Voltage-Min (Vsup) is 3.135V. It has a Memory Size of 18Mb 512K x 36 and a Supply Current-Max of 0.21mA. The Access Time is 6.5ns and the Memory Format is SRAM. The Organization is 512KX36 and the Output Characteristics are 3-STATE. The Density is 18 Mb and the Height Seated (Max) is 2.4mm.
CY7C1381F-133BGC Features
Package / Case: 119-BGA
119 Pins
Operating Supply Voltage:3.3V
Additional Feature:FLOW-THROUGH ARCHITECTURE
I/O Type: COMMON
CY7C1381F-133BGC Applications
There are a lot of Cypress Semiconductor Corp
CY7C1381F-133BGC Memory applications.
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
The Time@Peak Reflow Temperature-Max (s) for this product is not specified. The Supply Voltage-Min (Vsup) is 3.135V. It has a Memory Size of 18Mb 512K x 36 and a Supply Current-Max of 0.21mA. The Access Time is 6.5ns and the Memory Format is SRAM. The Organization is 512KX36 and the Output Characteristics are 3-STATE. The Density is 18 Mb and the Height Seated (Max) is 2.4mm.
CY7C1381F-133BGC Features
Package / Case: 119-BGA
119 Pins
Operating Supply Voltage:3.3V
Additional Feature:FLOW-THROUGH ARCHITECTURE
I/O Type: COMMON
CY7C1381F-133BGC Applications
There are a lot of Cypress Semiconductor Corp
CY7C1381F-133BGC Memory applications.
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
CY7C1381F-133BGC More Descriptions
Obsolete 3-STATE 2004 BOTTOM SRAM Memory 0C~70C TA 3.135V 18Mb 0.07A
IC SRAM 18MBIT PARALLEL 119PBGA
NON-VOLATILE SRAM MODULE, 128KX8
IC SRAM 18MBIT PARALLEL 119PBGA
NON-VOLATILE SRAM MODULE, 128KX8
The three parts on the right have similar specifications to CY7C1381F-133BGC.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureHTS CodeTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchReach Compliance CodeTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountQualification StatusOperating Supply VoltageSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeMemory TypeClock FrequencySupply Current-MaxAccess TimeMemory FormatMemory InterfaceOrganizationOutput CharacteristicsMemory WidthDensityStandby Current-MaxI/O TypeStandby Voltage-MinHeight Seated (Max)LengthWidthRoHS StatusLead FreeSurface MountJESD-30 CodeMemory DensityAccess Time (Max)Number of PortsNominal Supply CurrentAddress Bus WidthSync/AsyncWord SizeRadiation HardeningFrequencyPower SuppliesWrite Cycle Time - Word, PageView Compare
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CY7C1381F-133BGCThrough HoleSurface Mount119-BGA1190°C~70°C TATray2004e0Obsolete3 (168 Hours)1193A991.B.2.ATin/Lead (Sn/Pb)FLOW-THROUGH ARCHITECTURE8542.32.00.41SRAM - Synchronous, SDR3.135V~3.6VBOTTOM22013.3V1.27mmnot_compliantNOT SPECIFIEDCY7C1381119Not Qualified3.3V3.6V3.135V18Mb 512K x 36Volatile133MHz0.21mA6.5nsSRAMParallel512KX363-STATE3618 Mb0.07ACOMMON3.14V2.4mm22mm14mmNon-RoHS CompliantContains Lead--------------
-
-Surface Mount176-LQFP--40°C~85°C TATray2003-Obsolete3 (168 Hours)1763A991.B.2.A-PIPELINED ARCHITECTURE8542.32.00.41SRAM - Dual Port, Synchronous3.135V~3.465VQUAD-13.3V0.5mm--CY7C0852176Not Qualified-3.465V3.135V4.5Mb 128K x 36Volatile133MHz--SRAMParallel128KX36-36----1.6mm24mm24mmROHS3 CompliantLead FreeYESS-PQFP-G1764718592 bit4.4 ns---------
-
Surface MountSurface Mount172-LFBGA1720°C~70°C TATray2003e1Obsolete3 (168 Hours)172-Tin/Silver/Copper (Sn/Ag/Cu)PIPELINED ARCHITECTURE-SRAM - Dual Port, Synchronous3.135V~3.465VBOTTOM26013.3V1mm-40CY7C0851172-3.3V3.465V3.135V2Mb 64K x 36Volatile167MHz-4 nsSRAMParallel64KX363-STATE362 Mb0.075ACOMMON3.14V-15mm-ROHS3 CompliantLead Free----2300mA32bSynchronous36bNo---
-
Surface MountSurface Mount84-LCC (J-Lead)840°C~70°C TATray2004e3Obsolete3 (168 Hours)84EAR99Matte Tin (Sn)--SRAM - Dual Port, Asynchronous4.5V~5.5VQUAD26015V-unknown20CY7C02484Not Qualified5V--64Kb 4K x 16Volatile---SRAMParallel4KX163-STATE1664 kb0.015ACOMMON-5.08mm--ROHS3 CompliantLead Free---55 ns2230mA24bAsynchronous16b-55GHz5V55ns
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