Cypress Semiconductor Corp CY7C1062GE30-10BGXI
- Part Number:
- CY7C1062GE30-10BGXI
- Manufacturer:
- Cypress Semiconductor Corp
- Ventron No:
- 3722620-CY7C1062GE30-10BGXI
- Description:
- IC SRAM 16MBIT 10NS 119BGA
- Datasheet:
- CY7C1062GE30-10BGXI
Cypress Semiconductor Corp CY7C1062GE30-10BGXI technical specifications, attributes, parameters and parts with similar specifications to Cypress Semiconductor Corp CY7C1062GE30-10BGXI.
- Factory Lead Time13 Weeks
- Mounting TypeSurface Mount
- Package / Case119-BGA
- Surface MountYES
- Operating Temperature-40°C~85°C TA
- PackagingTray
- Published2012
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations119
- ECCN Code3A991.B.2.A
- HTS Code8542.32.00.41
- TechnologySRAM - Asynchronous
- Voltage - Supply2.2V~3.6V
- Terminal PositionBOTTOM
- Number of Functions1
- Supply Voltage3V
- Terminal Pitch1.27mm
- JESD-30 CodeR-PBGA-B119
- Supply Voltage-Max (Vsup)3.6V
- Supply Voltage-Min (Vsup)2.2V
- Memory Size16Mb 512K x 32
- Memory TypeVolatile
- Memory FormatSRAM
- Memory InterfaceParallel
- Organization512KX32
- Memory Width32
- Write Cycle Time - Word, Page10ns
- Memory Density16777216 bit
- Access Time (Max)10 ns
- Height Seated (Max)2.4mm
- Length22mm
- Width14mm
- RoHS StatusROHS3 Compliant
CY7C1062GE30-10BGXI Overview
In 2012, a new packaging method using trays was published for a memory chip with a moisture sensitivity level (MSL) of 3, allowing for a storage time of 168 hours. This chip, classified under ECCN code 3A991.B.2.A, has a voltage supply range of 2.2V to 3.6V and a memory size of 16Mb, organized into 512K x 32. Its memory type is volatile, meaning it requires a constant power source to retain data. With a write cycle time of 10ns, this chip allows for quick data transfer and storage. Additionally, it is important to note that this chip is compliant with RoHS3 standards, ensuring its environmental sustainability.
CY7C1062GE30-10BGXI Features
Package / Case: 119-BGA
CY7C1062GE30-10BGXI Applications
There are a lot of Cypress Semiconductor Corp CY7C1062GE30-10BGXI Memory applications.
data buffer
embedded logic
personal digital assistants
DVD disk buffer
eSRAM
Cache memory
networking
supercomputers
graphics card
telecommunications
In 2012, a new packaging method using trays was published for a memory chip with a moisture sensitivity level (MSL) of 3, allowing for a storage time of 168 hours. This chip, classified under ECCN code 3A991.B.2.A, has a voltage supply range of 2.2V to 3.6V and a memory size of 16Mb, organized into 512K x 32. Its memory type is volatile, meaning it requires a constant power source to retain data. With a write cycle time of 10ns, this chip allows for quick data transfer and storage. Additionally, it is important to note that this chip is compliant with RoHS3 standards, ensuring its environmental sustainability.
CY7C1062GE30-10BGXI Features
Package / Case: 119-BGA
CY7C1062GE30-10BGXI Applications
There are a lot of Cypress Semiconductor Corp CY7C1062GE30-10BGXI Memory applications.
data buffer
embedded logic
personal digital assistants
DVD disk buffer
eSRAM
Cache memory
networking
supercomputers
graphics card
telecommunications
CY7C1062GE30-10BGXI More Descriptions
SRAM Chip Async Single 2.5V/3.3V 16M-bit 512K x 32 10ns 119-Pin BGA Tray
Async Srams/Tray |Cypress Infineon Technologies CY7C1062GE30-10BGXI
IC SRAM 16MBIT PARALLEL 119PBGA
Async Srams/Tray |Cypress Infineon Technologies CY7C1062GE30-10BGXI
IC SRAM 16MBIT PARALLEL 119PBGA
The three parts on the right have similar specifications to CY7C1062GE30-10BGXI.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeHTS CodeTechnologyVoltage - SupplyTerminal PositionNumber of FunctionsSupply VoltageTerminal PitchJESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeMemory TypeMemory FormatMemory InterfaceOrganizationMemory WidthWrite Cycle Time - Word, PageMemory DensityAccess Time (Max)Height Seated (Max)LengthWidthRoHS StatusMountNumber of PinsJESD-609 CodeTerminal FinishPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountQualification StatusOperating Supply VoltagePower SuppliesNumber of PortsNominal Supply CurrentOutput CharacteristicsAddress Bus WidthDensityStandby Current-MaxI/O TypeSync/AsyncWord SizeSupply Current-MaxStandby Voltage-MinLead FreeAdditional FeatureFrequencyOutput EnableView Compare
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CY7C1062GE30-10BGXI13 WeeksSurface Mount119-BGAYES-40°C~85°C TATray2012Active3 (168 Hours)1193A991.B.2.A8542.32.00.41SRAM - Asynchronous2.2V~3.6VBOTTOM13V1.27mmR-PBGA-B1193.6V2.2V16Mb 512K x 32VolatileSRAMParallel512KX323210ns16777216 bit10 ns2.4mm22mm14mmROHS3 Compliant----------------------------
-
-Surface Mount84-LCC (J-Lead)--40°C~85°C TATube2004Obsolete3 (168 Hours)84EAR99-SRAM - Dual Port, Asynchronous4.5V~5.5VQUAD15V----64Kb 4K x 16VolatileSRAMParallel4KX161625ns--5.08mm--ROHS3 CompliantSurface Mount84e3Matte Tin (Sn)260unknown20CY7C02484Not Qualified5V5V2290mA3-STATE12b64 kb0.015ACOMMONAsynchronous16b------
-
-Surface Mount100-LQFPYES0°C~70°C TATray2004Obsolete3 (168 Hours)1003A991.B.2.A8542.32.00.41SRAM - Dual Port, Asynchronous3V~3.6VQUAD13.3V0.5mmS-PQFP-G1003.6V3V1.152Mb 64K x 18VolatileSRAMParallel64KX181815ns1179648 bit15 ns1.6mm14mm14mmROHS3 Compliant--e3Matte Tin (Sn)260unknown20CY7C038100Not Qualified-3.3V2-3-STATE--0.00005ACOMMON--0.185mA2VLead Free---
-
-Surface Mount100-LQFP-0°C~70°C TATray2001Obsolete3 (168 Hours)100EAR99-SRAM - Dual Port, Asynchronous4.5V~5.5VQUAD15V0.5mm---144Kb 8K x 18VolatileSRAMParallel8KX181815ns-15 ns1.6mm14mm-Non-RoHS CompliantSurface Mount100e0TIN LEAD240not_compliant30CY7C0251100Not Qualified5V5V2300mA3-STATE13b144 kb0.015ACOMMONAsynchronous18b-2VContains LeadINTERRUPT FLAG15GHzYES
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