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CSD17312Q5

Texas Instruments CSD17312Q5

Part Number:
CSD17312Q5
Manufacturer:
Texas Instruments
Ventron No:
2478773-CSD17312Q5
Description:
30-V, N channel NexFET? power MOSFET, single SON 5 mm x 6 mm, 1.7 mOhm
ECAD Model:
Datasheet:
csd17312q5

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Specifications
Texas Instruments CSD17312Q5 technical specifications, attributes, parameters and parts with similar specifications to Texas Instruments CSD17312Q5.
  • Lifecycle Status
    ACTIVE (Last Updated: 4 days ago)
  • Factory Lead Time
    12 Weeks
  • Contact Plating
    Gold
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerTDFN
  • Number of Pins
    8
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    NexFET™
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Additional Feature
    AVALANCHE RATED
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Peak Reflow Temperature (Cel)
    260
  • Base Part Number
    CSD17312
  • Pin Count
    8
  • Number of Elements
    1
  • Power Dissipation-Max
    3.2W Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    3.2W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    9.5 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    1.5m Ω @ 35A, 8V
  • Vgs(th) (Max) @ Id
    1.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    5240pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    38A Ta 100A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    36nC @ 4.5V
  • Rise Time
    27ns
  • Drive Voltage (Max Rds On,Min Rds On)
    3V 8V
  • Vgs (Max)
    10V, -8V
  • Fall Time (Typ)
    23 ns
  • Turn-Off Delay Time
    35 ns
  • Continuous Drain Current (ID)
    100A
  • Threshold Voltage
    1.1V
  • Gate to Source Voltage (Vgs)
    10V
  • Drain-source On Resistance-Max
    0.0024Ohm
  • Drain to Source Breakdown Voltage
    30V
  • Pulsed Drain Current-Max (IDM)
    200A
  • Height
    1.05mm
  • Length
    5mm
  • Width
    6mm
  • Thickness
    1mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Contains Lead
Description
FDP61N20 Description The NexFET? power MOSFET has been designed to minimize losses in power conversion applications and optimized for 5V gate drive applications. 
FDP61N20 Features Optimized for 5V Gate Drive Ultra Low Qg and Qgd Qgd Low Thermal Resistance Avalanche Rated Pb Free Terminal Plating RoHS Compliant Halogen Free ORDERING INFORMATION SON 5-mm × 6-mm Plastic Package
FDP61N20 Applications Notebook Point-of-Load Point-of-Load Synchronous Buck in Networking, Telecom and Computing Systems
CSD17312Q5 More Descriptions
30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 1.7 mOhm 8-VSON-CLIP -55 to 150
the nexfet power mosfet has been designed to minimize losses in power conversion applications and optimized for 5v gate drive applications.
MOSFET, N-CH, 30V, 100A, 8SON; Polarité transistor: Canal N; Courant de drain Id: 35A; Tension Vds max..: 30V; Résistance Rds(on): 0.0012ohm; Tension, mesure Rds: 8V; Tension de seuil Vgs: 1.1V; Dissipation de puissance Pd: 3.2
MOSFET, N-CH, 30V, 100A, 8SON; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0012ohm; Rds(on) Test Voltage Vgs:8V; Threshold Voltage Vgs:1.1V; Power Dissipation Pd:3.2W; Transistor Case Style:SON; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019); Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to 150°C; Voltage Vds Typ:30V; Voltage Vgs Rds on Measurement:1.1V
Product Comparison
The three parts on the right have similar specifications to CSD17312Q5.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Subcategory
    Technology
    Terminal Position
    Peak Reflow Temperature (Cel)
    Base Part Number
    Pin Count
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Height
    Length
    Width
    Thickness
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    VDS (V)
    Configuration
    Rds(on) at VGS=4.5 V (max) (mΩ)
    Rds(on) at VGS=10 V (max) (mΩ)
    IDM - pulsed drain current (max) (A)
    QG (typ) (nC)
    QGD (typ) (nC)
    QGS (typ) (nC)
    VGS (V)
    VGSTH (typ) (V)
    ID - silicon limited at TC=25°C (A)
    ID - package limited (A)
    Logic level
    Operating temperature range (°C)
    Rating
    Surface Mount
    Terminal Form
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Drain to Source Voltage (Vdss)
    Drain Current-Max (Abs) (ID)
    DS Breakdown Voltage-Min
    Feedback Cap-Max (Crss)
    Avalanche Energy Rating (Eas)
    Nominal Vgs
    View Compare
  • CSD17312Q5
    CSD17312Q5
    Texas Instruments
    ACTIVE (Last Updated: 4 days ago)
    12 Weeks
    Gold
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    NexFET™
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    Matte Tin (Sn)
    AVALANCHE RATED
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    260
    CSD17312
    8
    1
    3.2W Ta
    Single
    ENHANCEMENT MODE
    3.2W
    DRAIN
    9.5 ns
    N-Channel
    SWITCHING
    1.5m Ω @ 35A, 8V
    1.5V @ 250μA
    5240pF @ 15V
    38A Ta 100A Tc
    36nC @ 4.5V
    27ns
    3V 8V
    10V, -8V
    23 ns
    35 ns
    100A
    1.1V
    10V
    0.0024Ohm
    30V
    200A
    1.05mm
    5mm
    6mm
    1mm
    No SVHC
    No
    ROHS3 Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • CSD16406Q3
    CSD16406Q3
    Texas Instruments
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    25
    Single
    7.4
    5.3
    114
    5.8
    1.5
    2.5
    16
    1.7
    79
    60
    Yes
    -55 to 150
    Catalog
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    CSD17312Q5 vs CSD16406Q3
  • CSD18502Q5BT
    CSD18502Q5BT
    Texas Instruments
    ACTIVE (Last Updated: 4 days ago)
    8 Weeks
    -
    -
    Surface Mount
    8-PowerTDFN
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    NexFET™
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    Matte Tin (Sn)
    AVALANCHE RATED
    -
    MOSFET (Metal Oxide)
    DUAL
    260
    CSD18502
    -
    1
    3.2W Ta 156W Tc
    Single
    ENHANCEMENT MODE
    -
    DRAIN
    -
    N-Channel
    SWITCHING
    2.3m Ω @ 30A, 10V
    2.2V @ 250μA
    5070pF @ 20V
    100A Ta
    33nC @ 4.5V
    -
    4.5V 10V
    ±20V
    -
    -
    -
    -
    -
    0.0033Ohm
    -
    400A
    -
    5mm
    6mm
    950μm
    -
    -
    ROHS3 Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    YES
    NO LEAD
    not_compliant
    NOT SPECIFIED
    40V
    26A
    40V
    27 pF
    -
    -
    CSD17312Q5 vs CSD18502Q5BT
  • CSD17505Q5A
    CSD17505Q5A
    Texas Instruments
    ACTIVE (Last Updated: 6 days ago)
    16 Weeks
    Tin
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    NexFET™
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    -
    AVALANCHE RATED
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    260
    CSD17505
    8
    1
    3.2W Ta
    Single
    ENHANCEMENT MODE
    3.2W
    DRAIN
    8.3 ns
    N-Channel
    SWITCHING
    3.5m Ω @ 20A, 10V
    1.8V @ 250μA
    1980pF @ 15V
    24A Ta 100A Tc
    13nC @ 4.5V
    11.5ns
    4.5V 10V
    ±20V
    6.1 ns
    15 ns
    100A
    1.3V
    20V
    0.0046Ohm
    30V
    -
    1.1mm
    4.9mm
    6mm
    1mm
    No SVHC
    No
    Non-RoHS Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    24A
    -
    -
    290 mJ
    1.3 V
    CSD17312Q5 vs CSD17505Q5A
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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