ON Semiconductor BYW29-200G

Name: BYW29-200G
Brand: ON Semiconductor
SKU: 2424133-BYW29-200G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BYW29-200G

Manufacturer:: ON Semiconductor

Ventron No:: 2424133-BYW29-200G

Description:: DIODE GEN PURP 200V 8A TO220-2

ECAD Model:

Datasheet:: BYW29-200G

Specifications

ON Semiconductor BYW29-200G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BYW29-200G.

Lifecycle Status
ACTIVE (Last Updated: 4 days ago)
Factory Lead Time
4 Weeks
Contact Plating
Tin
Mounting Type
Through Hole
Package / Case
TO-220-2
Surface Mount
NO
Number of Pins
2
Weight
4.535924g
Diode Element Material
SILICON
Packaging
Tube
Series
SWITCHMODE™
Published
2000
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Max Operating Temperature
175°C
Min Operating Temperature
-65°C
Additional Feature
FREE WHEELING DIODE
HTS Code
8541.10.00.80
Subcategory
Rectifier Diodes
Voltage - Rated DC
200V
Peak Reflow Temperature (Cel)
260
Current Rating
8A
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
BYW29-200
Pin Count
2
Number of Elements
1
Element Configuration
Single
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Standard
Current - Reverse Leakage @ Vr
5μA @ 200V
Output Current
8A
Voltage - Forward (Vf) (Max) @ If
1.3V @ 20A
Case Connection
CATHODE
Forward Current
8A
Operating Temperature - Junction
-65°C~175°C
Max Surge Current
100A
Application
ULTRA FAST RECOVERY POWER
Forward Voltage
1.3V
Max Reverse Voltage (DC)
200V
Average Rectified Current
8A
Number of Phases
1
Reverse Recovery Time
35 ns
Peak Reverse Current
5μA
Max Repetitive Reverse Voltage (Vrrm)
200V
Peak Non-Repetitive Surge Current
100A
Reverse Voltage
200V
Max Forward Surge Current (Ifsm)
100A
Recovery Time
35 ns
Height
9.27mm
Length
10.29mm
Width
4.82mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BYW29-200G Overview
An acceptable reverse voltage would be 200V.As a result, this device has a rectified current of 8A volts on average.Phase diode rectifier is permissible for forward current to reach 8A.Fuse elements have an indefinite life expectancy of 8A, which is the maximum current that the fuse can carry for an indefinite period of time.There is no maximum value for 100A surge current.Based on the data charts in the datasheets, the peak reverse is 5μA.

BYW29-200G Features
an average rectified current of 8A volts
a current rating of 8A
the peak reverse is 5μA

BYW29-200G Applications
There are a lot of ON Semiconductor
BYW29-200G applications of single-phase diode rectifier.

DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode

BYW29-200G More Descriptions

Rectifier Diode, 1 Phase, 1 Element, 8A, 200V V(RRM), Silicon, TO-220AC
Rectifier Diode Switching 200V 8A 35ns 2-Pin(2 Tab) TO-220AC Tube
ON Semi BYW29-200G, Switching Diode, 200V 8A, 35ns, 2-Pin TO-220AC | ON Semiconductor BYW29-200G
...designed for use in switching power supplies inverters and as free wheeling diodes these state-of-the-art devices have the following
DIODE, RECTIFIER, 8A, 200V, TO-220B; Repetitive Reverse Voltage Vrrm Max: 200V; Forward Current If(AV): 8A; Diode Configuration: Single; Forward Voltage VF Max: 1.3V; Reverse Recovery Time trr Max: 35ns; Forward Surge Current

Product Comparison

The three parts on the right have similar specifications to BYW29-200G.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mounting Type

Package / Case

Surface Mount

Number of Pins

Weight

Diode Element Material

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Max Operating Temperature

Min Operating Temperature

Additional Feature

HTS Code

Subcategory

Voltage - Rated DC

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Number of Elements

Element Configuration

Speed

Diode Type

Current - Reverse Leakage @ Vr

Output Current

Voltage - Forward (Vf) (Max) @ If

Case Connection

Forward Current

Operating Temperature - Junction

Max Surge Current

Application

Forward Voltage

Max Reverse Voltage (DC)

Average Rectified Current

Number of Phases

Reverse Recovery Time

Peak Reverse Current

Max Repetitive Reverse Voltage (Vrrm)

Peak Non-Repetitive Surge Current

Reverse Voltage

Max Forward Surge Current (Ifsm)

Recovery Time

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Terminal Finish

Terminal Position

Reach Compliance Code

Reference Standard

JESD-30 Code

Operating Temperature (Max)

Configuration

Voltage - DC Reverse (Vr) (Max)

Rep Pk Reverse Voltage-Max

Reverse Current-Max

Mount

Qualification Status

Output Current-Max

Capacitance @ Vr, F

View Compare
BYW29-200G

ON Semiconductor

ACTIVE (Last Updated: 4 days ago)

4 Weeks

Tin

Through Hole

TO-220-2

NO

2

4.535924g

SILICON

Tube

SWITCHMODE™

2000

e3

yes

Active

1 (Unlimited)

2

EAR99

175°C

-65°C

FREE WHEELING DIODE

8541.10.00.80

Rectifier Diodes

200V

260

8A

40

BYW29-200

2

1

Single

Fast Recovery =< 500ns, > 200mA (Io)

Standard

5μA @ 200V

8A

1.3V @ 20A

CATHODE

8A

-65°C~175°C

100A

ULTRA FAST RECOVERY POWER

1.3V

200V

8A

1

35 ns

5μA

200V

100A

200V

100A

35 ns

9.27mm

10.29mm

4.82mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BYW29EX-200,127

WeEn Semiconductors

-

-

-

Through Hole

TO-220-2 Full Pack, Isolated Tab

NO

-

-

SILICON

Tube

-

-

e3

-

Active

1 (Unlimited)

2

EAR99

-

-

-

-

-

-

-

-

-

BYW29-200

-

1

-

Fast Recovery =< 500ns, > 200mA (Io)

Standard

10μA @ 200V

-

1.05V @ 8A

-

8A

150°C Max

-

ULTRA FAST SOFT RECOVERY

-

-

-

1

25ns

-

-

-

-

-

-

-

-

-

-

-

RoHS Compliant

-

Tin (Sn)

SINGLE

not_compliant

IEC-134

R-PSFM-T2

150°C

SINGLE

200V

200V

10μA

-

-

-

-

BYW29-200G vs BYW29EX-200,127
BYW29-100HE3/45

Vishay Semiconductor Diodes Division

-

20 Weeks

Tin

Through Hole

TO-220-2

-

2

-

SILICON

Tube

-

2011

e3

yes

Obsolete

1 (Unlimited)

2

EAR99

150°C

-65°C

FREE WHEELING DIODE, HIGH RELIABILITY

8541.10.00.80

Rectifier Diodes

-

NOT APPLICABLE

-

NOT APPLICABLE

BYW29-100

3

1

Single

Fast Recovery =< 500ns, > 200mA (Io)

Standard

10μA @ 100V

-

1.3V @ 20A

CATHODE

8A

-65°C~150°C

100A

EFFICIENCY

-

100V

8A

1

25 ns

10μA

100V

100A

100V

-

25 ns

-

-

-

-

-

ROHS3 Compliant

-

-

-

unknown

-

-

-

-

-

-

-

Through Hole

Not Qualified

8A

45pF @ 4V 1MHz

BYW29-200G vs BYW29-100HE3/45
BYW29-50HE3/45

Vishay Semiconductor Diodes Division

-

20 Weeks

Tin

Through Hole

TO-220-2

-

2

-

SILICON

Tube

-

2011

e3

yes

Obsolete

1 (Unlimited)

2

EAR99

150°C

-65°C

FREE WHEELING DIODE, HIGH RELIABILITY

8541.10.00.80

Rectifier Diodes

-

NOT APPLICABLE

-

NOT APPLICABLE

-

3

1

Single

Fast Recovery =< 500ns, > 200mA (Io)

Standard

10μA @ 50V

-

1.3V @ 20A

CATHODE

8A

-65°C~150°C

100A

EFFICIENCY

-

50V

8A

1

25 ns

10μA

50V

100A

50V

-

25 ns

-

-

-

-

-

ROHS3 Compliant

-

-

-

unknown

-

-

-

-

-

-

-

Through Hole

Not Qualified

8A

45pF @ 4V 1MHz

BYW29-200G vs BYW29-50HE3/45