Vishay Semiconductor Diodes Division BYV27-100-TR

Name: BYV27-100-TR
Brand: Vishay Semiconductor Diodes Division
SKU: 2421460-BYV27-100-TR
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BYV27-100-TR

Manufacturer:: Vishay Semiconductor Diodes Division

Ventron No:: 2421460-BYV27-100-TR

Description:: DIODE AVALANCHE 100V 2A SOD57

ECAD Model:

Datasheet:: BYV27-100-TR

Specifications

Vishay Semiconductor Diodes Division BYV27-100-TR technical specifications, attributes, parameters and parts with similar specifications to Vishay Semiconductor Diodes Division BYV27-100-TR.

Factory Lead Time
12 Weeks
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
SOD-57, Axial
Number of Pins
2
Diode Element Material
SILICON
Packaging
Tape & Reel (TR)
Published
2008
JESD-609 Code
e2
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Additional Feature
LOW LEAKAGE CURRENT
HTS Code
8541.10.00.80
Subcategory
Rectifier Diodes
Terminal Form
WIRE
Current Rating
2A
Base Part Number
BYV27-100
Pin Count
2
Number of Elements
1
Element Configuration
Single
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Avalanche
Current - Reverse Leakage @ Vr
1μA @ 100V
Voltage - Forward (Vf) (Max) @ If
1.07V @ 3A
Case Connection
ISOLATED
Forward Current
2A
Operating Temperature - Junction
-55°C~175°C
Max Surge Current
50A
Output Current-Max
2A
Application
ULTRA FAST RECOVERY
Forward Voltage
1.07V
Max Reverse Voltage (DC)
100V
Average Rectified Current
2A
Number of Phases
1
Reverse Recovery Time
25 ns
Peak Reverse Current
1μA
Max Repetitive Reverse Voltage (Vrrm)
100V
Peak Non-Repetitive Surge Current
50A
Reverse Voltage
100V
Max Forward Surge Current (Ifsm)
50A
Recovery Time
25 ns
Diameter
3.6mm
Length
3.9878mm
REACH SVHC
Unknown
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BYV27-100-TR Overview
An acceptable reverse voltage would be 100V.As a result, this device has a rectified current of 2A volts on average.Phase diode rectifier is permissible for forward current to reach 2A.Fuse elements have an indefinite life expectancy of 2A, which is the maximum current that the fuse can carry for an indefinite period of time.There is no maximum value for 50A surge current.Using the output current as an example, 2A is the maximum value.Based on the data charts in the datasheets, the peak reverse is 1μA.

BYV27-100-TR Features
an average rectified current of 2A volts
a current rating of 2A
2A is the maximum value
the peak reverse is 1μA

BYV27-100-TR Applications
There are a lot of Vishay Semiconductor Diodes Division
BYV27-100-TR applications of single-phase diode rectifier.

DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode

BYV27-100-TR More Descriptions

Rectifier Diode, Avalanche, 1 Phase, 1 Element, 2A, 100V V(RRM), Silicon, DO-204AP
Diode Ultra Fast Recovery Rectifier 100V 2A 2-Pin DO-15 T/R
BYV Series 100 V 2 A Through Hole Ultra-Fast Avalanche SinterglassDiode - SOD-57
Diode, Avalanche, Ultrafast, Vr 150V, If 2A, Pkg SOD-57,Vf 1.07V, Trr 25ns, Tj 175degc | Siliconix / Vishay BYV27-100-TR
DIODE, POWER RECTIFIER, FAST; Diode Type:Fast Recovery; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:100V; Forward Current If(AV):2A; Forward Voltage VF Max:1.07V; Reverse Recovery Time trr Max:25ns; Forward Surge Current Ifsm Max:50A; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Diode Case Style:SOD-57; No. of Pins:2; Current Ifsm:50A; Junction Temperature Tj Max:175°C; Operating Temperature Range:-55°C to 175°C; Package / Case:SOD-57; Reverse Recovery Time trr Typ:25ns; Termination Type:Axial Leaded

Product Comparison

The three parts on the right have similar specifications to BYV27-100-TR.

Image

Part Number

Manufacturer

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Diode Element Material

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Max Operating Temperature

Min Operating Temperature

Additional Feature

HTS Code

Subcategory

Terminal Form

Current Rating

Base Part Number

Pin Count

Number of Elements

Element Configuration

Speed

Diode Type

Current - Reverse Leakage @ Vr

Voltage - Forward (Vf) (Max) @ If

Case Connection

Forward Current

Operating Temperature - Junction

Max Surge Current

Output Current-Max

Application

Forward Voltage

Max Reverse Voltage (DC)

Average Rectified Current

Number of Phases

Reverse Recovery Time

Peak Reverse Current

Max Repetitive Reverse Voltage (Vrrm)

Peak Non-Repetitive Surge Current

Reverse Voltage

Max Forward Surge Current (Ifsm)

Recovery Time

Diameter

Length

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Surface Mount

Terminal Finish

Terminal Position

Reach Compliance Code

Reference Standard

JESD-30 Code

Operating Temperature (Max)

Configuration

Voltage - DC Reverse (Vr) (Max)

Current - Average Rectified (Io)

Rep Pk Reverse Voltage-Max

JEDEC-95 Code

Non-rep Pk Forward Current-Max

Reverse Current-Max

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Qualification Status

View Compare
BYV27-100-TR

Vishay Semiconductor Diodes Division

12 Weeks

Tin

Through Hole

Through Hole

SOD-57, Axial

2

SILICON

Tape & Reel (TR)

2008

e2

yes

Active

1 (Unlimited)

2

EAR99

175°C

-55°C

LOW LEAKAGE CURRENT

8541.10.00.80

Rectifier Diodes

WIRE

2A

BYV27-100

2

1

Single

Fast Recovery =< 500ns, > 200mA (Io)

Avalanche

1μA @ 100V

1.07V @ 3A

ISOLATED

2A

-55°C~175°C

50A

2A

ULTRA FAST RECOVERY

1.07V

100V

2A

1

25 ns

1μA

100V

50A

100V

50A

25 ns

3.6mm

3.9878mm

Unknown

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BYV25F-600,127

WeEn Semiconductors

-

-

-

Through Hole

TO-220-2

-

SILICON

Tube

-

e3

-

Active

1 (Unlimited)

2

-

-

-

-

-

-

-

-

BYV25-600

-

1

-

Fast Recovery =< 500ns, > 200mA (Io)

Standard

50μA @ 600V

1.9V @ 5A

CATHODE

-

150°C Max

-

-

ULTRA FAST SOFT RECOVERY POWER

-

-

-

1

35ns

-

-

-

-

-

-

-

-

-

-

RoHS Compliant

-

NO

Tin (Sn)

SINGLE

not_compliant

IEC-60134

R-PSFM-T2

150°C

SINGLE

600V

5A

600V

TO-220AC

66A

50μA

-

-

-

BYV27-100-TR vs BYV25F-600,127
BYV29-400-E3/45

Vishay Semiconductor Diodes Division

18 Weeks

Tin

Through Hole

Through Hole

TO-220-2

2

SILICON

Tube

2011

e3

yes

Active

1 (Unlimited)

2

EAR99

150°C

-40°C

FREE WHEELING DIODE

8541.10.00.80

Rectifier Diodes

-

-

BYV29-400

3

1

Single

Fast Recovery =< 500ns, > 200mA (Io)

Standard

10μA @ 400V

1.25V @ 8A

CATHODE

8A

-40°C~150°C

110A

8A

EFFICIENCY

1.4V

400V

8A

1

50 ns

10μA

400V

110A

400V

-

50 ns

-

-

-

-

ROHS3 Compliant

-

-

-

-

unknown

-

-

-

-

-

-

-

-

-

-

NOT SPECIFIED

NOT SPECIFIED

Not Qualified

BYV27-100-TR vs BYV29-400-E3/45
BYV27-150-TR

Vishay Semiconductor Diodes Division

12 Weeks

-

Through Hole

Through Hole

SOD-57, Axial

2

SILICON

Tape & Reel (TR)

2011

e2

yes

Active

1 (Unlimited)

2

EAR99

175°C

-55°C

LOW LEAKAGE CURRENT

8541.10.00.80

Rectifier Diodes

WIRE

2A

-

2

1

Single

Fast Recovery =< 500ns, > 200mA (Io)

Avalanche

1μA @ 165V

1.07V @ 3A

ISOLATED

2A

-55°C~175°C

50A

2A

ULTRA FAST RECOVERY

1.07V

165V

2A

1

25 ns

1μA

150V

50A

150V

-

25 ns

-

-

-

No

ROHS3 Compliant

Lead Free

-

Tin/Silver (Sn/Ag)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

BYV27-100-TR vs BYV27-150-TR