Vishay Semiconductor Diodes Division BYV26E-TR

Name: BYV26E-TR
Brand: Vishay Semiconductor Diodes Division
SKU: 2423443-BYV26E-TR
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BYV26E-TR

Manufacturer:: Vishay Semiconductor Diodes Division

Ventron No:: 2423443-BYV26E-TR

Description:: DIODE AVALANCHE 1000V 1A SOD57

ECAD Model:

Datasheet:: BYV26E-TR

Specifications

Vishay Semiconductor Diodes Division BYV26E-TR technical specifications, attributes, parameters and parts with similar specifications to Vishay Semiconductor Diodes Division BYV26E-TR.

Factory Lead Time
12 Weeks
Contact Plating
Silver, Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
SOD-57, Axial
Number of Pins
2
Diode Element Material
SILICON
Packaging
Tape & Reel (TR)
Published
2008
JESD-609 Code
e2
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin/Silver (Sn/Ag)
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
HTS Code
8541.10.00.80
Subcategory
Rectifier Diodes
Terminal Form
WIRE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Current Rating
1A
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
BYV26E
Pin Count
2
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Avalanche
Current - Reverse Leakage @ Vr
5μA @ 1000V
Voltage - Forward (Vf) (Max) @ If
2.5V @ 1A
Case Connection
ISOLATED
Forward Current
1A
Operating Temperature - Junction
-55°C~175°C
Max Surge Current
30A
Output Current-Max
1A
Voltage - DC Reverse (Vr) (Max)
1000V
Forward Voltage
2.5V
Max Reverse Voltage (DC)
1kV
Average Rectified Current
1A
Reverse Recovery Time
75 ns
Peak Reverse Current
5μA
Max Repetitive Reverse Voltage (Vrrm)
1kV
Peak Non-Repetitive Surge Current
30A
Reverse Voltage
1kV
Max Forward Surge Current (Ifsm)
30A
Recovery Time
75 ns
Diameter
3.6mm
Length
3.9878mm
REACH SVHC
Unknown
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BYV26E-TR Overview
The reverse voltage should be 1kV.In this device, there is an average rectified current of 1A volts.Forward current may not exceed 1A.1A is its maximum current rating, which is the maximum current that a fuse can handle without deteriorating.This is the maximum amount of 30A surge current that can be used.Output current is maximal at 1A.As the data chart indicates, the peak reverse is 5μA.

BYV26E-TR Features
an average rectified current of 1A volts
a current rating of 1A
1A is the maximum value
the peak reverse is 5μA

BYV26E-TR Applications
There are a lot of Vishay Semiconductor Diodes Division
BYV26E-TR applications of single-phase diode rectifier.

DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode

BYV26E-TR More Descriptions

Rectifier Diode, Avalanche, 1 Phase, 1 Element, 1A, 1000V V(RRM), Silicon, DO-204AP
Diode,Avalanche,Ultrafast,Vr 1000V,If 1A,Pkg SOD-57,Vf 2.5V,Trr 75ns,Tj 175degc
1 A 1000 V 75 ns Through Hole Sinterglass Avalanche Ultrafast Diode - SOD-57
Rectifier Diode Switching 1KV 1A 75ns 2-Pin SOD-57 T/R
DIODE, POWER RECTIFIER, FAST; Diode Type:Fast Recovery; Voltage, Vrrm:1000V; Current, If AV:1A; Current, Ifsm:30A; Time, trr Typ:75ns; Voltage, Vf Max:2.5V; Temperature, Tj Max:175°C; Termination Type:Axial Leaded; Operating Temperature Range:-55°C to 175°C; Case Style:SOD-57; No. of Pins:2

Product Comparison

The three parts on the right have similar specifications to BYV26E-TR.

Image

Part Number

Manufacturer

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Diode Element Material

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Max Operating Temperature

Min Operating Temperature

HTS Code

Subcategory

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Qualification Status

Number of Elements

Element Configuration

Speed

Diode Type

Current - Reverse Leakage @ Vr

Voltage - Forward (Vf) (Max) @ If

Case Connection

Forward Current

Operating Temperature - Junction

Max Surge Current

Output Current-Max

Voltage - DC Reverse (Vr) (Max)

Forward Voltage

Max Reverse Voltage (DC)

Average Rectified Current

Reverse Recovery Time

Peak Reverse Current

Max Repetitive Reverse Voltage (Vrrm)

Peak Non-Repetitive Surge Current

Reverse Voltage

Max Forward Surge Current (Ifsm)

Recovery Time

Diameter

Length

REACH SVHC

RoHS Status

Lead Free

Surface Mount

Terminal Position

Reach Compliance Code

Reference Standard

JESD-30 Code

Operating Temperature (Max)

Configuration

Application

Current - Average Rectified (Io)

Number of Phases

Rep Pk Reverse Voltage-Max

JEDEC-95 Code

Non-rep Pk Forward Current-Max

Reverse Current-Max

Series

Additional Feature

Capacitance @ Vr, F

Height

Radiation Hardening

View Compare
BYV26E-TR

Vishay Semiconductor Diodes Division

12 Weeks

Silver, Tin

Through Hole

Through Hole

SOD-57, Axial

2

SILICON

Tape & Reel (TR)

2008

e2

yes

Active

1 (Unlimited)

2

EAR99

Tin/Silver (Sn/Ag)

175°C

-55°C

8541.10.00.80

Rectifier Diodes

WIRE

NOT SPECIFIED

1A

NOT SPECIFIED

BYV26E

2

Not Qualified

1

Single

Fast Recovery =< 500ns, > 200mA (Io)

Avalanche

5μA @ 1000V

2.5V @ 1A

ISOLATED

1A

-55°C~175°C

30A

1A

1000V

2.5V

1kV

1A

75 ns

5μA

1kV

30A

1kV

30A

75 ns

3.6mm

3.9878mm

Unknown

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BYV25F-600,127

WeEn Semiconductors

-

-

-

Through Hole

TO-220-2

-

SILICON

Tube

-

e3

-

Active

1 (Unlimited)

2

-

Tin (Sn)

-

-

-

-

-

-

-

-

BYV25-600

-

-

1

-

Fast Recovery =< 500ns, > 200mA (Io)

Standard

50μA @ 600V

1.9V @ 5A

CATHODE

-

150°C Max

-

-

600V

-

-

-

35ns

-

-

-

-

-

-

-

-

-

RoHS Compliant

-

NO

SINGLE

not_compliant

IEC-60134

R-PSFM-T2

150°C

SINGLE

ULTRA FAST SOFT RECOVERY POWER

5A

1

600V

TO-220AC

66A

50μA

-

-

-

-

-

BYV26E-TR vs BYV25F-600,127
BYV26EGP-E3/73

Vishay Semiconductor Diodes Division

22 Weeks

Tin

Through Hole

Through Hole

DO-204AC, DO-15, Axial

2

SILICON

Tape & Box (TB)

2016

e3

yes

Active

1 (Unlimited)

2

EAR99

-

175°C

-65°C

8541.10.00.80

Rectifier Diodes

WIRE

-

-

-

BYV26EGP

2

-

1

Single

Fast Recovery =< 500ns, > 200mA (Io)

Avalanche

5μA @ 1000V

2.5V @ 1A

ISOLATED

1A

-65°C~175°C

30A

1A

1000V

2.5V

1kV

1A

75 ns

5μA

1kV

30A

1kV

-

75 ns

3.6mm

7.6mm

-

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

SUPERECTIFIER®

FREE WHEELING DIODE, HIGH RELIABILITY

15pF @ 4V 1MHz

7.6mm

No

BYV26E-TR vs BYV26EGP-E3/73
BYV29-400-E3/45

Vishay Semiconductor Diodes Division

18 Weeks

Tin

Through Hole

Through Hole

TO-220-2

2

SILICON

Tube

2011

e3

yes

Active

1 (Unlimited)

2

EAR99

-

150°C

-40°C

8541.10.00.80

Rectifier Diodes

-

NOT SPECIFIED

-

NOT SPECIFIED

BYV29-400

3

Not Qualified

1

Single

Fast Recovery =< 500ns, > 200mA (Io)

Standard

10μA @ 400V

1.25V @ 8A

CATHODE

8A

-40°C~150°C

110A

8A

-

1.4V

400V

8A

50 ns

10μA

400V

110A

400V

-

50 ns

-

-

-

ROHS3 Compliant

-

-

-

unknown

-

-

-

-

EFFICIENCY

-

1

-

-

-

-

-

FREE WHEELING DIODE

-

-

-

BYV26E-TR vs BYV29-400-E3/45