Vishay Semiconductor Diodes Division BYG23MHE3/TR
- Part Number:
- BYG23MHE3/TR
- Manufacturer:
- Vishay Semiconductor Diodes Division
- Ventron No:
- 2426441-BYG23MHE3/TR
- Description:
- DIODE AVALANCHE 1KV 1.5A
- Datasheet:
- BYG23MHE3/TR
Vishay Semiconductor Diodes Division BYG23MHE3/TR technical specifications, attributes, parameters and parts with similar specifications to Vishay Semiconductor Diodes Division BYG23MHE3/TR.
- Voltage - Forward (Vf) (Max) @ If:1.7V @ 1A
- Voltage - DC Reverse (Vr) (Max):1000V (1kV)
- Supplier Device Package:DO-214AC (SMA)
- Speed:Fast Recovery = 200mA (Io)
- Series:-
- Reverse Recovery Time (trr):75ns
- Packaging:Tape & Reel (TR)
- Package / Case:DO-214AC, SMA
- Operating Temperature - Junction:-55°C ~ 150°C
- Mounting Type:Surface Mount
- Diode Type:Avalanche
- Current - Reverse Leakage @ Vr:5µA @ 1000V
- Current - Average Rectified (Io):1.5A
- Capacitance @ Vr, F:-
The BYG23MHE3/TR is DIODE AVALANCHE 1KV 1.5A , it is part of - series. they are designed to work as Diodes - Rectifiers - Single.BYG23MHE3/TR with pin details manufactured by Vishay / Semiconductor - Diodes Division. The BYG23MHE3/TR is available in DO-214AC (SMA) Package,it is part of the electronic component Chips.that includes - Series. they are designed to operate as Diodes - Rectifiers - Single.it is with Operating Temperature .BYG23MHE3/TR with original stock manufactured by Vishay / Semiconductor - Diodes Division. The BYG23MHE3/TR is available in DO-214AC (SMA) Package.Generally IC chips offer Mounting Style features such as SMD/SMT, Package Case of BYG23MHE3/TRis designed to work in DO-214AC, SMA, it's Operating Temperature is .The BYG23MHE3/TR is available in DO-214AC, SMA Package, is part of the Diodes - Rectifiers - Single and belong to Discrete Semiconductor Products.BYG23MHE3/TR with EDA / CAD Models manufactured by Vishay / Semiconductor - Diodes Division. The BYG23MHE3/TR is available in DO-214AC (SMA)Package, is part of the Discrete Semiconductor Products.The BYG23MHE3/TR is Diodes - Rectifiers - Single with package DO-214AC, SMA manufactured by Vishay / Semiconductor - Diodes Division. The BYG23MHE3/TR is available in DO-214AC (SMA) Package, is part of the DIODE AVALANCHE 1KV 1.5A.
BYG23MHE3/TR More Descriptions
Diode Switching 1KV 1.5A 2-Pin SMA T/R
DIODE AVALANC 1000V 1.5A DO214AC
Avalanche 1 Phase 1 Element 1.5A 1000V V(RRM) Silicon DO-214AC
Diode; Diode Type:Avalanche; Repetitive Reverse Voltage Max Vrrm:1kV; Forward Current If(AV):1.5A; Forward Voltage VF Max:1.7V; Reverse Recovery Time trr Max:75ns; Forward Surge Current Ifsm Max:30A ;RoHS Compliant: Yes
DIODE AVALANC 1000V 1.5A DO214AC
Avalanche 1 Phase 1 Element 1.5A 1000V V(RRM) Silicon DO-214AC
Diode; Diode Type:Avalanche; Repetitive Reverse Voltage Max Vrrm:1kV; Forward Current If(AV):1.5A; Forward Voltage VF Max:1.7V; Reverse Recovery Time trr Max:75ns; Forward Surge Current Ifsm Max:30A ;RoHS Compliant: Yes
The three parts on the right have similar specifications to BYG23MHE3/TR.
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ImagePart NumberManufacturerVoltage - Forward (Vf) (Max) @ If:Voltage - DC Reverse (Vr) (Max):Supplier Device Package:Speed:Series:Reverse Recovery Time (trr):Packaging:Package / Case:Operating Temperature - Junction:Mounting Type:Diode Type:Current - Reverse Leakage @ Vr:Current - Average Rectified (Io):Capacitance @ Vr, F:MountMounting TypePackage / CaseSupplier Device PackagePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Voltage - Rated DCCurrent RatingBase Part NumberPolaritySpeedDiode TypeCurrent - Reverse Leakage @ VrOutput CurrentVoltage - Forward (Vf) (Max) @ IfOperating Temperature - JunctionVoltage - DC Reverse (Vr) (Max)Current - Average Rectified (Io)Max Reverse Voltage (DC)Average Rectified CurrentReverse Recovery TimeRoHS StatusLead FreeFactory Lead TimeDiode Element MaterialSeriesJESD-609 CodeNumber of TerminationsECCN CodeTerminal FinishAdditional FeatureHTS CodeTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeOperating Temperature (Max)Number of ElementsConfigurationApplicationNumber of PhasesNon-rep Pk Forward Current-MaxContact PlatingNumber of PinsPbfree CodeMax Operating TemperatureMin Operating TemperatureSubcategoryPin CountVoltageElement ConfigurationCurrentForward CurrentMax Surge CurrentForward VoltagePeak Reverse CurrentMax Repetitive Reverse Voltage (Vrrm)Peak Non-Repetitive Surge CurrentReverse VoltageRecovery TimeRadiation HardeningView Compare
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BYG23MHE3/TR1.7V @ 1A1000V (1kV)DO-214AC (SMA)Fast Recovery = 200mA (Io)-75nsTape & Reel (TR)DO-214AC, SMA-55°C ~ 150°CSurface MountAvalanche5µA @ 1000V1.5A-------------------------------------------------------------------
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--------------Surface MountSurface MountDO-214AC, SMADO-214AC (SMA)Tape & Reel (TR)2004Discontinued1 (Unlimited)600V1.5ABYG20JStandardFast Recovery =< 500ns, > 200mA (Io)Avalanche1μA @ 600V1.5A1.4V @ 1.5A-55°C~150°C600V1.5A600V1.5A75 nsROHS3 CompliantContains Lead----------------------------------------
-
--------------Surface MountSurface MountDO-214AC, SMA-Tape & Reel (TR)2016Active1 (Unlimited)----Fast Recovery =< 500ns, > 200mA (Io)Avalanche1μA @ 600V-1.25V @ 1.5A-55°C~150°C600V-600V1.5A140 nsROHS3 Compliant-10 WeeksSILICONAutomotive, AEC-Q101e32EAR99Matte Tin (Sn)FREE WHEELING DIODE8541.10.00.80DUALC BEND260unknown30R-PDSO-C2150°C1SINGLEFAST SOFT RECOVERY130A-------------------
-
--------------Surface MountSurface MountDO-214AC, SMA-Tape & Reel (TR)2011Active1 (Unlimited)--BYG24G-Fast Recovery =< 500ns, > 200mA (Io)Avalanche1μA @ 400V-1.25V @ 1.5A-55°C~150°C--400V1.5A140 nsROHS3 Compliant-10 WeeksSILICON-e32EAR99-FREE WHEELING DIODE8541.10.00.80DUALC BEND260-40--1-FAST SOFT RECOVERY1-Tin2yes150°C-55°CRectifier Diodes2400VSingle15A1.5A30A1.25V1μA400V30A400V140 nsNo
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