Vishay Semiconductor Diodes Division BYG22BHE3/TR

Name: BYG22BHE3/TR
Brand: Vishay Semiconductor Diodes Division
SKU: 3063928-BYG22BHE3/TR
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BYG22BHE3/TR

Manufacturer:: Vishay Semiconductor Diodes Division

Ventron No:: 3063928-BYG22BHE3/TR

Description:: DIODE AVALANCHE 100V 2A DO214AC

ECAD Model:

Datasheet:: BYG22BHE3/TR

Specifications

Vishay Semiconductor Diodes Division BYG22BHE3/TR technical specifications, attributes, parameters and parts with similar specifications to Vishay Semiconductor Diodes Division BYG22BHE3/TR.

Voltage - Forward (Vf) (Max) @ If:
1.1V @ 2A
Voltage - DC Reverse (Vr) (Max):
100V
Supplier Device Package:
DO-214AC (SMA)
Speed:
Fast Recovery = 200mA (Io)
Series:
-
Reverse Recovery Time (trr):
25ns
Packaging:
Tape & Reel (TR)
Package / Case:
DO-214AC, SMA
Operating Temperature - Junction:
-55°C ~ 150°C
Mounting Type:
Surface Mount
Diode Type:
Avalanche
Current - Reverse Leakage @ Vr:
1µA @ 100V
Current - Average Rectified (Io):
2A
Capacitance @ Vr, F:
-

Description

part No. BYG22BHE3/TR Is this available? : YesShipped from : HK warehouseSame model may have different manufacturers, images only for reference.

BYG22BHE3/TR More Descriptions

Diode Switching 100V 2A 2-Pin SMA T/R
Avalanche 1 Phase 1 Element 2A 100V V(RRM) Silicon DO-214AC
Compliant Surface Mount Avalanche SMA 25 ns Tin 2 A 100 V
French Electronic Distributor since 1988
Diode; Diode Type:Avalanche; Repetitive Reverse Voltage Max Vrrm:100V; Forward Current If(AV):2A; Forward Voltage VF Max:1.1V; Reverse Recovery Time trr Max:25ns; Forward Surge Current Ifsm Max:35A ;RoHS Compliant: Yes

Product Comparison

The three parts on the right have similar specifications to BYG22BHE3/TR.

Image

Part Number

Manufacturer

Voltage - Forward (Vf) (Max) @ If:

Voltage - DC Reverse (Vr) (Max):

Supplier Device Package:

Speed:

Series:

Reverse Recovery Time (trr):

Packaging:

Package / Case:

Operating Temperature - Junction:

Mounting Type:

Diode Type:

Current - Reverse Leakage @ Vr:

Current - Average Rectified (Io):

Capacitance @ Vr, F:

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Diode Element Material

Packaging

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Max Operating Temperature

Min Operating Temperature

Additional Feature

HTS Code

Subcategory

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Number of Elements

Element Configuration

Speed

Diode Type

Current - Reverse Leakage @ Vr

Voltage - Forward (Vf) (Max) @ If

Forward Current

Operating Temperature - Junction

Max Surge Current

Application

Forward Voltage

Max Reverse Voltage (DC)

Average Rectified Current

Number of Phases

Reverse Recovery Time

Peak Reverse Current

Max Repetitive Reverse Voltage (Vrrm)

Peak Non-Repetitive Surge Current

Reverse Voltage

Max Forward Surge Current (Ifsm)

Recovery Time

Height

Length

Width

Radiation Hardening

RoHS Status

Supplier Device Package

Published

Voltage - Rated DC

Current Rating

Polarity

Output Current

Voltage - DC Reverse (Vr) (Max)

Current - Average Rectified (Io)

Lead Free

Voltage

Current

View Compare
BYG22BHE3/TR

Vishay Semiconductor Diodes Division

1.1V @ 2A

100V

DO-214AC (SMA)

Fast Recovery = 200mA (Io)

-

25ns

Tape & Reel (TR)

DO-214AC, SMA

-55°C ~ 150°C

Surface Mount

Avalanche

1µA @ 100V

2A

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BYG20D-E3/TR3

Vishay Semiconductor Diodes Division

-

-

-

-

-

-

-

-

-

-

-

-

-

-

10 Weeks

Tin

Surface Mount

Surface Mount

DO-214AC, SMA

2

SILICON

Tape & Reel (TR)

e3

yes

Active

1 (Unlimited)

2

EAR99

150°C

-55°C

FREE WHEELING DIODE

8541.10.00.80

Rectifier Diodes

DUAL

C BEND

260

40

BYG20D

2

1

Single

Fast Recovery =< 500ns, > 200mA (Io)

Avalanche

1μA @ 200V

1.4V @ 1.5A

1.5A

-55°C~150°C

30A

ULTRA FAST SOFT RECOVERY

1.4V

200V

1.5A

1

75 ns

1μA

200V

30A

200V

30A

75 ns

2.09mm

4.5mm

2.79mm

No

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

BYG22BHE3/TR vs BYG20D-E3/TR3
BYG20J/54

Vishay Semiconductor Diodes Division

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Surface Mount

Surface Mount

DO-214AC, SMA

-

-

Tape & Reel (TR)

-

-

Discontinued

1 (Unlimited)

-

-

-

-

-

-

-

-

-

-

-

BYG20J

-

-

-

Fast Recovery =< 500ns, > 200mA (Io)

Avalanche

1μA @ 600V

1.4V @ 1.5A

-

-55°C~150°C

-

-

-

600V

1.5A

-

75 ns

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

DO-214AC (SMA)

2004

600V

1.5A

Standard

1.5A

600V

1.5A

Contains Lead

-

-

BYG22BHE3/TR vs BYG20J/54
BYG24G-E3/TR

Vishay Semiconductor Diodes Division

-

-

-

-

-

-

-

-

-

-

-

-

-

-

10 Weeks

Tin

Surface Mount

Surface Mount

DO-214AC, SMA

2

SILICON

Tape & Reel (TR)

e3

yes

Active

1 (Unlimited)

2

EAR99

150°C

-55°C

FREE WHEELING DIODE

8541.10.00.80

Rectifier Diodes

DUAL

C BEND

260

40

BYG24G

2

1

Single

Fast Recovery =< 500ns, > 200mA (Io)

Avalanche

1μA @ 400V

1.25V @ 1.5A

1.5A

-55°C~150°C

30A

FAST SOFT RECOVERY

1.25V

400V

1.5A

1

140 ns

1μA

400V

30A

400V

-

140 ns

-

-

-

No

ROHS3 Compliant

-

2011

-

-

-

-

-

-

-

400V

15A

BYG22BHE3/TR vs BYG24G-E3/TR