Vishay Semiconductor Diodes Division BYG20G-E3/TR

Name: BYG20G-E3/TR
Brand: Vishay Semiconductor Diodes Division
SKU: 2423227-BYG20G-E3/TR
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BYG20G-E3/TR

Manufacturer:: Vishay Semiconductor Diodes Division

Ventron No:: 2423227-BYG20G-E3/TR

Description:: DIODE AVALANCHE 400V 1.5A

ECAD Model:

Datasheet:: BYG20G-E3/TR

Specifications

Vishay Semiconductor Diodes Division BYG20G-E3/TR technical specifications, attributes, parameters and parts with similar specifications to Vishay Semiconductor Diodes Division BYG20G-E3/TR.

Factory Lead Time
10 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
DO-214AC, SMA
Number of Pins
2
Diode Element Material
SILICON
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Additional Feature
FREE WHEELING DIODE
HTS Code
8541.10.00.80
Subcategory
Rectifier Diodes
Terminal Position
DUAL
Terminal Form
C BEND
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
BYG20G
Pin Count
2
Number of Elements
1
Element Configuration
Single
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Avalanche
Current - Reverse Leakage @ Vr
1μA @ 400V
Voltage - Forward (Vf) (Max) @ If
1.4V @ 1.5A
Forward Current
1.5A
Operating Temperature - Junction
-55°C~150°C
Max Surge Current
30A
Application
ULTRA FAST SOFT RECOVERY
Forward Voltage
1.4V
Max Reverse Voltage (DC)
400V
Average Rectified Current
1.5A
Number of Phases
1
Reverse Recovery Time
75 ns
Peak Reverse Current
1μA
Max Repetitive Reverse Voltage (Vrrm)
400V
Peak Non-Repetitive Surge Current
30A
Reverse Voltage
400V
Max Forward Surge Current (Ifsm)
30A
Recovery Time
75 ns
Height
2.09mm
Length
4.5mm
Width
2.79mm
REACH SVHC
Unknown
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BYG20G-E3/TR Overview
Reverse voltage 400V is a reasonable value.For this device, the average rectified current is 1.5A volts.In this case, forward current can reach 1.5A.Phase diode rectifier is possible to use a surge current of maximum value 30A.Based on the data chart, the peak reverse is 1μA.

BYG20G-E3/TR Features
an average rectified current of 1.5A volts
the peak reverse is 1μA

BYG20G-E3/TR Applications
There are a lot of Vishay Semiconductor Diodes Division
BYG20G-E3/TR applications of single-phase diode rectifier.

DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode

BYG20G-E3/TR More Descriptions

Rectifier Diode, Avalanche, 1 Phase, 1 Element, 1.5A, 400V V(RRM), Silicon, DO-214AC
Rectifier Diode Switching 400V 1.5A 75ns 2-Pin SMA T/R
BYG20G Series 1.5 A 400 V 75 ns Surface Mount Avalanche Diode - DO-214AC
DIODE, AVALANCHE, 1.5A, 400V; Diode Type:Fast Recovery; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:400V; Forward Current If(AV):1.5A; Forward Voltage VF Max:1.4V; Reverse Recovery Time trr Max:75ns; Forward Surge Current Ifsm Max:30A; Operating Temperature Range:-55°C to 150°C; Diode Case Style:DO-214AC; No. of Pins:2; SVHC:No SVHC (19-Dec-2011); Alternate Case Style:DO-214AC; Current Ifsm:30A; External Depth:3mm; External Length / Height:3mm; External Width:6mm; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Package / Case:SMA; Reverse Recovery Time trr Typ:75ns; Termination Type:SMD

Product Comparison

The three parts on the right have similar specifications to BYG20G-E3/TR.

Image

Part Number

Manufacturer

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Diode Element Material

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Max Operating Temperature

Min Operating Temperature

Additional Feature

HTS Code

Subcategory

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Number of Elements

Element Configuration

Speed

Diode Type

Current - Reverse Leakage @ Vr

Voltage - Forward (Vf) (Max) @ If

Forward Current

Operating Temperature - Junction

Max Surge Current

Application

Forward Voltage

Max Reverse Voltage (DC)

Average Rectified Current

Number of Phases

Reverse Recovery Time

Peak Reverse Current

Max Repetitive Reverse Voltage (Vrrm)

Peak Non-Repetitive Surge Current

Reverse Voltage

Max Forward Surge Current (Ifsm)

Recovery Time

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Voltage - Forward (Vf) (Max) @ If:

Voltage - DC Reverse (Vr) (Max):

Supplier Device Package:

Speed:

Series:

Reverse Recovery Time (trr):

Packaging:

Package / Case:

Operating Temperature - Junction:

Mounting Type:

Diode Type:

Current - Reverse Leakage @ Vr:

Current - Average Rectified (Io):

Capacitance @ Vr, F:

Voltage

Current

View Compare
BYG20G-E3/TR

Vishay Semiconductor Diodes Division

10 Weeks

Tin

Surface Mount

Surface Mount

DO-214AC, SMA

2

SILICON

Tape & Reel (TR)

2006

e3

yes

Active

1 (Unlimited)

2

EAR99

150°C

-55°C

FREE WHEELING DIODE

8541.10.00.80

Rectifier Diodes

DUAL

C BEND

260

40

BYG20G

2

1

Single

Fast Recovery =< 500ns, > 200mA (Io)

Avalanche

1μA @ 400V

1.4V @ 1.5A

1.5A

-55°C~150°C

30A

ULTRA FAST SOFT RECOVERY

1.4V

400V

1.5A

1

75 ns

1μA

400V

30A

400V

30A

75 ns

2.09mm

4.5mm

2.79mm

Unknown

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BYG20D-E3/TR3

Vishay Semiconductor Diodes Division

10 Weeks

Tin

Surface Mount

Surface Mount

DO-214AC, SMA

2

SILICON

Tape & Reel (TR)

-

e3

yes

Active

1 (Unlimited)

2

EAR99

150°C

-55°C

FREE WHEELING DIODE

8541.10.00.80

Rectifier Diodes

DUAL

C BEND

260

40

BYG20D

2

1

Single

Fast Recovery =< 500ns, > 200mA (Io)

Avalanche

1μA @ 200V

1.4V @ 1.5A

1.5A

-55°C~150°C

30A

ULTRA FAST SOFT RECOVERY

1.4V

200V

1.5A

1

75 ns

1μA

200V

30A

200V

30A

75 ns

2.09mm

4.5mm

2.79mm

-

No

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

BYG20G-E3/TR vs BYG20D-E3/TR3
BYG22BHE3/TR

Vishay Semiconductor Diodes Division

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

1.1V @ 2A

100V

DO-214AC (SMA)

Fast Recovery = 200mA (Io)

-

25ns

Tape & Reel (TR)

DO-214AC, SMA

-55°C ~ 150°C

Surface Mount

Avalanche

1µA @ 100V

2A

-

-

-

BYG20G-E3/TR vs BYG22BHE3/TR
BYG24G-E3/TR

Vishay Semiconductor Diodes Division

10 Weeks

Tin

Surface Mount

Surface Mount

DO-214AC, SMA

2

SILICON

Tape & Reel (TR)

2011

e3

yes

Active

1 (Unlimited)

2

EAR99

150°C

-55°C

FREE WHEELING DIODE

8541.10.00.80

Rectifier Diodes

DUAL

C BEND

260

40

BYG24G

2

1

Single

Fast Recovery =< 500ns, > 200mA (Io)

Avalanche

1μA @ 400V

1.25V @ 1.5A

1.5A

-55°C~150°C

30A

FAST SOFT RECOVERY

1.25V

400V

1.5A

1

140 ns

1μA

400V

30A

400V

-

140 ns

-

-

-

-

No

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

400V

15A

BYG20G-E3/TR vs BYG24G-E3/TR