Vishay Semiconductor Diodes Division BYG10G-E3/TR

Name: BYG10G-E3/TR
Brand: Vishay Semiconductor Diodes Division
SKU: 2423199-BYG10G-E3/TR
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BYG10G-E3/TR

Manufacturer:: Vishay Semiconductor Diodes Division

Ventron No:: 2423199-BYG10G-E3/TR

Description:: DIODE AVALANCHE 400V 1.5A

ECAD Model:

Datasheet:: BYG10G-E3/TR

Specifications

Vishay Semiconductor Diodes Division BYG10G-E3/TR technical specifications, attributes, parameters and parts with similar specifications to Vishay Semiconductor Diodes Division BYG10G-E3/TR.

Factory Lead Time
10 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
DO-214AC, SMA
Number of Pins
2
Diode Element Material
SILICON
Packaging
Tape & Reel (TR)
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Termination
SMD/SMT
ECCN Code
EAR99
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Additional Feature
FREE WHEELING DIODE
HTS Code
8541.10.00.80
Subcategory
Rectifier Diodes
Terminal Position
DUAL
Terminal Form
C BEND
Peak Reflow Temperature (Cel)
260
Current Rating
1.5A
Time@Peak Reflow Temperature-Max (s)
30
Base Part Number
BYG10G
Pin Count
2
Number of Elements
1
Voltage
400V
Element Configuration
Single
Speed
Standard Recovery >500ns, > 200mA (Io)
Current
15A
Diode Type
Avalanche
Current - Reverse Leakage @ Vr
1μA @ 400V
Voltage - Forward (Vf) (Max) @ If
1.15V @ 1.5A
Forward Current
1.5A
Operating Temperature - Junction
-55°C~150°C
Max Surge Current
30A
Application
GENERAL PURPOSE
Forward Voltage
1.15V
Max Reverse Voltage (DC)
400V
Average Rectified Current
1.5A
Number of Phases
1
Reverse Recovery Time
4 μs
Peak Reverse Current
1μA
Max Repetitive Reverse Voltage (Vrrm)
400V
Peak Non-Repetitive Surge Current
30A
Reverse Voltage
400V
Max Forward Surge Current (Ifsm)
30A
Recovery Time
4 μs
Height
2.09mm
Length
4.5mm
Width
2.79mm
REACH SVHC
Unknown
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BYG10G-E3/TR Overview
An acceptable reverse voltage would be 400V.As a result, this device has a rectified current of 1.5A volts on average.Phase diode rectifier is permissible for forward current to reach 1.5A.Fuse elements have an indefinite life expectancy of 1.5A, which is the maximum current that the fuse can carry for an indefinite period of time.There is no maximum value for 30A surge current.Based on the data charts in the datasheets, the peak reverse is 1μA.

BYG10G-E3/TR Features
an average rectified current of 1.5A volts
a current rating of 1.5A
the peak reverse is 1μA

BYG10G-E3/TR Applications
There are a lot of Vishay Semiconductor Diodes Division
BYG10G-E3/TR applications of single-phase diode rectifier.

DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode

BYG10G-E3/TR More Descriptions

Rectifier Diode, Avalanche, 1 Phase, 1 Element, 1.5A, 400V V(RRM), Silicon, DO-214AC
BYG10G Series 400 V 1.5 A Standard Avalanche Surface Mount Rectifier - DO-214AC
Rectifier Diode Switching 400V 1.5A 4000ns 2-Pin SMA T/R
Reverse Repetitive Voltage Max. (Vrrm) V = 400 / Forward Current (If) A = 1.5 / Configuration = Single / Forward Voltage (Vf) V = 1.1 / Reverse Recovery Time (trr) us = 4 / Reverse Current uA = 10 / Operating Temperature Min. °C = -50 / Operating Temperature Max. °C = 150 / Package Type = DO-214AC / Pins = 2 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Length mm = 4.5 / Width mm = 2.8 / Height mm = 2.1 / Reflow Temperature Max. °C = 260
DIODE, AVALANCHE, 1.5A, 400V, SMD; Diode Type:Fast Recovery; Repetitive Reverse Voltage Vrrm Max:400V; Forward Current If(AV):1.5A; Forward Voltage VF Max:1.15V; Reverse Recovery Time trr Max:4µs; Forward Surge Current Ifsm Max:30A; Operating Temperature Range:-55°C to 150°C; Diode Case Style:DO-214AC; No. of Pins:2; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:DO-214AC; Current Ifsm:30A; External Depth:3mm; External Length / Height:3mm; External Width:6mm; Forward Voltage:1.15V; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Package / Case:SMA; Reverse Recovery Time trr Typ:4µs; Termination Type:SMD

Product Comparison

The three parts on the right have similar specifications to BYG10G-E3/TR.

Image

Part Number

Manufacturer

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Diode Element Material

Packaging

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Max Operating Temperature

Min Operating Temperature

Additional Feature

HTS Code

Subcategory

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Number of Elements

Voltage

Element Configuration

Speed

Current

Diode Type

Current - Reverse Leakage @ Vr

Voltage - Forward (Vf) (Max) @ If

Forward Current

Operating Temperature - Junction

Max Surge Current

Application

Forward Voltage

Max Reverse Voltage (DC)

Average Rectified Current

Number of Phases

Reverse Recovery Time

Peak Reverse Current

Max Repetitive Reverse Voltage (Vrrm)

Peak Non-Repetitive Surge Current

Reverse Voltage

Max Forward Surge Current (Ifsm)

Recovery Time

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Voltage - Forward (Vf) (Max) @ If:

Voltage - DC Reverse (Vr) (Max):

Supplier Device Package:

Speed:

Series:

Reverse Recovery Time (trr):

Packaging:

Package / Case:

Operating Temperature - Junction:

Mounting Type:

Diode Type:

Current - Reverse Leakage @ Vr:

Current - Average Rectified (Io):

Capacitance @ Vr, F:

View Compare
BYG10G-E3/TR

Vishay Semiconductor Diodes Division

10 Weeks

Tin

Surface Mount

Surface Mount

DO-214AC, SMA

2

SILICON

Tape & Reel (TR)

e3

yes

Active

1 (Unlimited)

2

SMD/SMT

EAR99

150°C

-55°C

FREE WHEELING DIODE

8541.10.00.80

Rectifier Diodes

DUAL

C BEND

260

1.5A

30

BYG10G

2

1

400V

Single

Standard Recovery >500ns, > 200mA (Io)

15A

Avalanche

1μA @ 400V

1.15V @ 1.5A

1.5A

-55°C~150°C

30A

GENERAL PURPOSE

1.15V

400V

1.5A

1

4 μs

1μA

400V

30A

400V

30A

4 μs

2.09mm

4.5mm

2.79mm

Unknown

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BYG10JHM3/TR

Vishay Semiconductor Diodes Division

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1.15V @ 1.5A

600V

DO-214AC (SMA)

Standard Recovery >500ns, > 200mA (Io)

Automotive, AEC-Q101

4µs

Tape & Reel (TR)

DO-214AC, SMA

-55°C ~ 150°C

Surface Mount

Avalanche

1µA @ 600V

1.5A

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BYG10G-E3/TR vs BYG10JHM3/TR
BYG10MHE3/TR3

Vishay Semiconductor Diodes Division

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1.15V @ 1.5A

1000V (1kV)

DO-214AC (SMA)

Standard Recovery >500ns, > 200mA (Io)

-

4µs

Tape & Reel (TR)

DO-214AC, SMA

-55°C ~ 150°C

Surface Mount

Avalanche

1µA @ 1000V

1.5A

-

BYG10G-E3/TR vs BYG10MHE3/TR3
BYG10DHM3/TR

Vishay Semiconductor Diodes Division

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1.15V @ 1.5A

200V

DO-214AC (SMA)

Standard Recovery >500ns, > 200mA (Io)

Automotive, AEC-Q101

4µs

Tape & Reel (TR)

DO-214AC, SMA

-55°C ~ 150°C

Surface Mount

Avalanche

1µA @ 200V

1.5A

-

BYG10G-E3/TR vs BYG10DHM3/TR