Images are for reference only.See Product Specifications for product details.If you are interested to buy SIEMENS BUZ72.
BUZ72 More Descriptions
Power Field-Effect Transistor, 10A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
French Electronic Distributor since 1988
French Electronic Distributor since 1988
The three parts on the right have similar specifications to BUZ72.
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ImagePart NumberManufacturerSurface MountNumber of TerminalsTransistor Element MaterialJESD-609 CodePbfree CodeMoisture Sensitivity Level (MSL)Terminal FinishAdditional FeatureTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusNumber of ElementsConfigurationOperating ModePolarity/Channel TypeJEDEC-95 CodeDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)FET TechnologyRoHS StatusSubcategoryOperating Temperature (Max)Power Dissipation-Max (Abs)View Compare
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BUZ72------------------------------ -
NO3SILICONe0noNOT SPECIFIEDTIN LEADAVALANCHE RATEDSINGLETHROUGH-HOLENOT SPECIFIEDNOT SPECIFIEDR-PSFM-T3COMMERCIAL1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEN-CHANNELTO-220AB2.9A3.5Ohm11.5A600V180 mJMETAL-OXIDE SEMICONDUCTORNon-RoHS Compliant---
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NO3SILICONe0--Tin/Lead (Sn/Pb)AVALANCHE RATEDSINGLETHROUGH-HOLENOT SPECIFIEDNOT SPECIFIEDR-PSFM-T3Not Qualified1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEN-CHANNELTO-220AB2.1A4Ohm11A600V180 mJMETAL-OXIDE SEMICONDUCTORNon-RoHS CompliantFET General Purpose Power150°C40W
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NO--e0--Tin/Lead (Sn/Pb)--------SingleENHANCEMENT MODEN-CHANNEL-2A----METAL-OXIDE SEMICONDUCTORNon-RoHS CompliantFET General Purpose Power150°C40W
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