BUZ325

SIEMENS BUZ325

Part Number:
BUZ325
Manufacturer:
SIEMENS
Ventron No:
5633946-BUZ325
Description:
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
ECAD Model:
Datasheet:
BUZ325

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Specifications
SIEMENS BUZ325 technical specifications, attributes, parameters and parts with similar specifications to SIEMENS BUZ325.
  • Surface Mount
    NO
  • Number of Terminals
    3
  • Transistor Element Material
    SILICON
  • JESD-609 Code
    e0
  • Pbfree Code
    yes
  • Terminal Finish
    TIN LEAD
  • Additional Feature
    AVALANCHE RATED
  • Terminal Position
    SINGLE
  • Terminal Form
    THROUGH-HOLE
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • JESD-30 Code
    R-PSFM-T3
  • Qualification Status
    COMMERCIAL
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Operating Mode
    ENHANCEMENT MODE
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    N-CHANNEL
  • JEDEC-95 Code
    TO-218
  • Drain Current-Max (Abs) (ID)
    12.5A
  • Drain-source On Resistance-Max
    0.35Ohm
  • Pulsed Drain Current-Max (IDM)
    50A
  • DS Breakdown Voltage-Min
    400V
  • Avalanche Energy Rating (Eas)
    670 mJ
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • RoHS Status
    Non-RoHS Compliant
Description
BUZ325 Overview
This product is manufactured by SIEMENS and belongs to the category of Modules. The images we provide are for reference only, for detailed product information please see specification sheet BUZ325 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of BUZ325. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
BUZ325 More Descriptions
OEMs, CMs ONLY (NO BROKERS)
Product Comparison
The three parts on the right have similar specifications to BUZ325.
  • Image
    Part Number
    Manufacturer
    Surface Mount
    Number of Terminals
    Transistor Element Material
    JESD-609 Code
    Pbfree Code
    Terminal Finish
    Additional Feature
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Operating Mode
    Transistor Application
    Polarity/Channel Type
    JEDEC-95 Code
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    FET Technology
    RoHS Status
    Reach Compliance Code
    View Compare
  • BUZ325
    BUZ325
    NO
    3
    SILICON
    e0
    yes
    TIN LEAD
    AVALANCHE RATED
    SINGLE
    THROUGH-HOLE
    NOT SPECIFIED
    NOT SPECIFIED
    R-PSFM-T3
    COMMERCIAL
    1
    SINGLE
    ENHANCEMENT MODE
    SWITCHING
    N-CHANNEL
    TO-218
    12.5A
    0.35Ohm
    50A
    400V
    670 mJ
    METAL-OXIDE SEMICONDUCTOR
    Non-RoHS Compliant
    -
    -
  • BUZ382
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    compliant
  • BUZ380
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    compliant
  • BUZ358
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    compliant
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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