SIEMENS BUZ30A technical specifications, attributes, parameters and parts with similar specifications to SIEMENS BUZ30A.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesSIPMOS®
- Published2005
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- TerminationThrough Hole
- ECCN CodeEAR99
- Resistance130mOhm
- Terminal FinishMATTE TIN
- Additional FeatureAVALANCHE RATED
- SubcategoryFET General Purpose Power
- Voltage - Rated DC200V
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Current Rating21A
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- Qualification StatusNot Qualified
- Lead Pitch2.54mm
- Number of Elements1
- Power Dissipation-Max125W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation125W
- Turn On Delay Time30 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs130m Ω @ 13.5A, 10V
- Vgs(th) (Max) @ Id4V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds1900pF @ 25V
- Current - Continuous Drain (Id) @ 25°C21A Tc
- Rise Time70ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)90 ns
- Turn-Off Delay Time250 ns
- Reverse Recovery Time180 ns
- Continuous Drain Current (ID)21A
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage200V
- Pulsed Drain Current-Max (IDM)84A
- Dual Supply Voltage200V
- Avalanche Energy Rating (Eas)450 mJ
- Nominal Vgs3 V
- Height9.25mm
- Length10mm
- Width4.4mm
- REACH SVHCNo SVHC
- RoHS StatusRoHS Compliant
- Lead FreeContains Lead
BUZ30A Description
The Infineon Technologies BUZ30A MOSFET is SIPMOS?Power Transistor with N-Channel 200V, 21A, TO-220AB.
BUZ30A Features
N channel
Enhancement mode
Avalanche-rated
Pb-free lead plating; RoHS compliant
BUZ30A Applications
Body & Convenience
The Infineon Technologies BUZ30A MOSFET is SIPMOS?Power Transistor with N-Channel 200V, 21A, TO-220AB.
BUZ30A Features
N channel
Enhancement mode
Avalanche-rated
Pb-free lead plating; RoHS compliant
BUZ30A Applications
Body & Convenience
BUZ30A More Descriptions
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0201 5.4pF 25volts C0G /-0.25pF
21 A 200 V 0.13 ohm N-CHANNEL Si POWER MOSFET TO-220AB
MOSFET, N, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:200V; Current, Id Cont:21A; Resistance, Rds On:0.13ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:TO-220AB; Termination ;RoHS Compliant: Yes
MOSFET, N, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:200V; Current, Id Cont:21A; Resistance, Rds On:0.13ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:TO-220AB; Termination Type:Through Hole; Operating Temperature Range:-55°C to 150°C; Avalanche Single Pulse Energy Eas:450mJ; Current, Idm Pulse:84A; Device Marking:BUZ30A; Lead Spacing:2.54mm; No. of Pins:3; Pin Configuration:a; Pin Format:1G, (2 Tab)D, 3S; Power Dissipation:125W; Power, Pd:125W; Power, Ptot:125W; Resistance, Rds on @ Vgs = 10V:0.13ohm; Temperature, Current:26°C; Temperature, Full Power Rating:25°C; Time, trr Typ:180ns; Transistors, No. of:1; Typ Capacitance Ciss:1400pF; Voltage, Vds Max:200V; Voltage, Vgs th Max:4V; Voltage, Vgs th Min:2.1V
21 A 200 V 0.13 ohm N-CHANNEL Si POWER MOSFET TO-220AB
MOSFET, N, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:200V; Current, Id Cont:21A; Resistance, Rds On:0.13ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:TO-220AB; Termination ;RoHS Compliant: Yes
MOSFET, N, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:200V; Current, Id Cont:21A; Resistance, Rds On:0.13ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:TO-220AB; Termination Type:Through Hole; Operating Temperature Range:-55°C to 150°C; Avalanche Single Pulse Energy Eas:450mJ; Current, Idm Pulse:84A; Device Marking:BUZ30A; Lead Spacing:2.54mm; No. of Pins:3; Pin Configuration:a; Pin Format:1G, (2 Tab)D, 3S; Power Dissipation:125W; Power, Pd:125W; Power, Ptot:125W; Resistance, Rds on @ Vgs = 10V:0.13ohm; Temperature, Current:26°C; Temperature, Full Power Rating:25°C; Time, trr Typ:180ns; Transistors, No. of:1; Typ Capacitance Ciss:1400pF; Voltage, Vds Max:200V; Voltage, Vgs th Max:4V; Voltage, Vgs th Min:2.1V
The three parts on the right have similar specifications to BUZ30A.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeResistanceTerminal FinishAdditional FeatureSubcategoryVoltage - Rated DCTechnologyPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Pin CountQualification StatusLead PitchNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeReverse Recovery TimeContinuous Drain Current (ID)JEDEC-95 CodeGate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Dual Supply VoltageAvalanche Energy Rating (Eas)Nominal VgsHeightLengthWidthREACH SVHCRoHS StatusLead FreeReach Compliance CodeView Compare
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BUZ30AThrough HoleThrough HoleTO-220-33SILICON-55°C~150°C TJTubeSIPMOS®2005e3Obsolete1 (Unlimited)3Through HoleEAR99130mOhmMATTE TINAVALANCHE RATEDFET General Purpose Power200VMOSFET (Metal Oxide)NOT SPECIFIED21ANOT SPECIFIED3Not Qualified2.54mm1125W TcSingleENHANCEMENT MODE125W30 nsN-Channel130m Ω @ 13.5A, 10V4V @ 1mA1900pF @ 25V21A Tc70ns10V±20V90 ns250 ns180 ns21ATO-220AB20V200V84A200V450 mJ3 V9.25mm10mm4.4mmNo SVHCRoHS CompliantContains Lead-- -
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