BUP303

SIEMENS BUP303

Part Number:
BUP303
Manufacturer:
SIEMENS
Ventron No:
5633580-BUP303
Description:
IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated)
ECAD Model:
Datasheet:
BUP303

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Specifications
SIEMENS BUP303 technical specifications, attributes, parameters and parts with similar specifications to SIEMENS BUP303.
  • Surface Mount
    NO
  • JESD-609 Code
    e0
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • Subcategory
    Insulated Gate BIP Transistors
  • Operating Temperature (Max)
    150°C
  • Polarity/Channel Type
    N-CHANNEL
  • Power Dissipation-Max (Abs)
    165W
  • Collector Current-Max (IC)
    21A
  • Collector-Emitter Voltage-Max
    1000V
  • Gate-Emitter Voltage-Max
    20V
  • Gate-Emitter Thr Voltage-Max
    6.5V
  • RoHS Status
    Non-RoHS Compliant
Description
BUP303 Overview
This product is manufactured by SIEMENS and belongs to the category of Modules. The images we provide are for reference only, for detailed product information please see specification sheet BUP303 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of BUP303. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
Product Comparison
The three parts on the right have similar specifications to BUP303.
  • Image
    Part Number
    Manufacturer
    Surface Mount
    JESD-609 Code
    Terminal Finish
    Subcategory
    Operating Temperature (Max)
    Polarity/Channel Type
    Power Dissipation-Max (Abs)
    Collector Current-Max (IC)
    Collector-Emitter Voltage-Max
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    RoHS Status
    Number of Terminals
    Transistor Element Material
    Additional Feature
    Terminal Position
    Terminal Form
    JESD-30 Code
    Qualification Status
    Number of Elements
    Rise Time-Max
    Configuration
    Transistor Application
    JEDEC-95 Code
    Turn On Time
    Turn Off Time-Nom (toff)
    VCEsat-Max
    Turn Off Time-Max (toff)
    Turn On Time-Max (ton)
    Power Dissipation Ambient-Max
    Fall Time-Max (tf)
    View Compare
  • BUP303
    BUP303
    NO
    e0
    Tin/Lead (Sn/Pb)
    Insulated Gate BIP Transistors
    150°C
    N-CHANNEL
    165W
    21A
    1000V
    20V
    6.5V
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • BUP306D
    NO
    -
    -
    -
    150°C
    N-CHANNEL
    -
    23A
    1200V
    20V
    6.5V
    -
    3
    SILICON
    HIGH SPEED
    SINGLE
    THROUGH-HOLE
    R-PSFM-T3
    Not Qualified
    1
    50ns
    SINGLE WITH BUILT-IN DIODE
    MOTOR CONTROL
    TO-218
    40 ns
    200 ns
    3.3 V
    300ns
    60ns
    165W
    30ns
  • BUP304
    NO
    e0
    Tin/Lead (Sn/Pb)
    Insulated Gate BIP Transistors
    150°C
    N-CHANNEL
    310W
    35A
    1000V
    20V
    6.5V
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    200ns
    -
    -
    -
    -
    -
    -
    -
    -
    -
    300ns
  • BUP309
    NO
    e0
    Tin/Lead (Sn/Pb)
    Insulated Gate BIP Transistors
    150°C
    N-CHANNEL
    310W
    -
    1700V
    20V
    6.5V
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    80ns
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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