ON BSP19AT1G

Part Number:: BSP19AT1G

Manufacturer:: ON

Ventron No:: 5534327-BSP19AT1G

Description:: passive components in stock

ECAD Model:

Datasheet:: BSP19AT1G

Specifications

ON BSP19AT1G technical specifications, attributes, parameters and parts with similar specifications to ON BSP19AT1G.

Lifecycle Status
LAST SHIPMENTS (Last Updated: 4 days ago)
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Surface Mount
YES
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Cut Tape (CT)
Published
2007
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
350V
Max Power Dissipation
800mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
1A
Frequency
70MHz
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
BSP19
Pin Count
4
Number of Elements
1
Element Configuration
Single
Power Dissipation
800mW
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
70MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
350V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 20mA 10V
Current - Collector Cutoff (Max)
20nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 4mA, 50mA
Collector Emitter Breakdown Voltage
350V
Transition Frequency
70MHz
Collector Emitter Saturation Voltage
500mV
Max Breakdown Voltage
350V
Collector Base Voltage (VCBO)
400V
Emitter Base Voltage (VEBO)
5V
hFE Min
40
Height
1.75mm
Length
6.7mm
Width
3.7mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
RoHS Compliant
Lead Free
Lead Free

Description

BSP19AT1G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 20mA 10V DC current gain.As it features a collector emitter saturation voltage of 500mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 70MHz in the part.Single BJT transistor can be broken down at a voltage of 350V volts.When collector current reaches its maximum, it can reach 100mA volts.

BSP19AT1G Features
the DC current gain for this device is 40 @ 20mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 4mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 70MHz

BSP19AT1G Applications
There are a lot of ON Semiconductor
BSP19AT1G applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BSP19AT1G More Descriptions

Trans GP BJT NPN 350V 0.1A Automotive 4-Pin(3 Tab) SOT-223 T/R
Small Signal Bipolar Transistor, 0.1A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-261AA
Transistor, Bipolar,Si,NPN,Power,VCEO 350VDC,IC 100mA,PD 0.8W,SOT-223,hFE 40 | ON Semiconductor BSP19AT1G
Transistor SOT223-4/HIGH VOLTAGE TRANSISTOR NPN
BIPOLAR TRANSISTOR, NPN, 350V; Transisto; BIPOLAR TRANSISTOR, NPN, 350V; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:350V; Transition Frequency Typ ft:70MHz; Power Dissipation Pd:800mW; DC Collector Current:100mA; DC Current Gain hFE:40; No. of Pins:3
This family of NPN Silicon Epitaxial transistors is designed for use as a general purpose amplifier and in switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications.

Product Comparison

The three parts on the right have similar specifications to BSP19AT1G.

Image

Part Number

Manufacturer

Lifecycle Status

Contact Plating

Mounting Type

Package / Case

Surface Mount

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Subcategory

Voltage - Rated DC

Max Power Dissipation

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Frequency

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Number of Elements

Element Configuration

Power Dissipation

Case Connection

Transistor Application

Gain Bandwidth Product

Polarity/Channel Type

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Transition Frequency

Collector Emitter Saturation Voltage

Max Breakdown Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

region:

Shipment :

Packaging:

Distributor:

Contact Email:

Condition:

Mount

Series

Terminal Finish

Additional Feature

Technology

Reach Compliance Code

Configuration

Power Dissipation-Max

Operating Mode

Turn On Delay Time

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Factory Lead Time

Body Material

Feature

Termination

Color

HTS Code

Depth

Wire Gauge

Wire Gauge (Max)

Wire Gauge (Min)

Terminal and Terminal Block Type

Insulation

Terminal Type

Number of Wire Entries

Terminal Gender

View Compare
BSP19AT1G

ON

LAST SHIPMENTS (Last Updated: 4 days ago)

Tin

Surface Mount

TO-261-4, TO-261AA

YES

4

SILICON

-65°C~150°C TJ

Cut Tape (CT)

2007

e3

yes

Obsolete

1 (Unlimited)

4

EAR99

Other Transistors

350V

800mW

DUAL

GULL WING

260

1A

70MHz

40

BSP19

4

1

Single

800mW

COLLECTOR

SWITCHING

70MHz

NPN

NPN

350V

100mA

40 @ 20mA 10V

20nA ICBO

500mV @ 4mA, 50mA

350V

70MHz

500mV

350V

400V

5V

40

1.75mm

6.7mm

3.7mm

No SVHC

No

RoHS Compliant

Lead Free

-

-

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-
BSP125L6327

INFINEON

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hk

DHL

SOT223

Ventron

sales@ventronchip.com

New

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BSP19AT1G vs BSP125L6327
BSP123L6327HTSA1

Infineon Technologies

-

-

Surface Mount

TO-261-4, TO-261AA

-

4

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2003

e3

yes

Obsolete

1 (Unlimited)

4

EAR99

-

-

-

DUAL

GULL WING

260

-

-

40

-

4

1

-

1.79W

DRAIN

-

-

-

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-

RoHS Compliant

-

-

-

-

-

-

-

Surface Mount

SIPMOS®

MATTE TIN

LOGIC LEVEL COMPATIBLE

MOSFET (Metal Oxide)

unknown

SINGLE WITH BUILT-IN DIODE

1.79W Ta

ENHANCEMENT MODE

3.3 ns

N-Channel

6 Ω @ 370mA, 10V

1.8V @ 50μA

70pF @ 25V

370mA Ta

2.4nC @ 10V

3.2ns

100V

2.8V 10V

±20V

9.4 ns

8.7 ns

370mA

20V

0.37A

6Ohm

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BSP19AT1G vs BSP123L6327HTSA1
BSP18-3K

Panduit Corp

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Reel

2005

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-

Active

Not Applicable

-

EAR99

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24.4mm

-

-

No

ROHS3 Compliant

-

-

-

-

-

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-

-

Pan-Term®

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4 Weeks

Copper

Brazed Seam

Crimp

Red

8536.90.40.00

5.5mm

16-22 AWG

22 AWG

16 AWG

WIRE TERMINAL

Fully Insulated

Butt Splice, Inline, Individual Openings

2

FEMALE

BSP19AT1G vs BSP18-3K