Infineon Technologies BGSA12GN10E6327XTSA1
- Part Number:
- BGSA12GN10E6327XTSA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 4399060-BGSA12GN10E6327XTSA1
- Description:
- IC SWITCH RF 10TSNP
- Datasheet:
- BGSA12GN10E6327XTSA1
Infineon Technologies BGSA12GN10E6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BGSA12GN10E6327XTSA1.
- Factory Lead Time8 Weeks
- Package / Case10-XFQFN
- Surface MountYES
- Number of Pins10
- Operating Temperature-30°C~85°C
- PackagingTape & Reel (TR)
- FeatureDC Blocked, Single Line Control
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations10
- HTS Code8542.39.00.01
- Voltage - Supply1.8V~3.6V
- Terminal PositionBOTTOM
- Terminal FormBUTT
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Number of Functions1
- Supply Voltage2.85V
- Terminal Pitch0.4mm
- Frequency5GHz
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- CircuitSPDT
- Test Frequency2.69GHz
- Impedance50Ohm
- Halogen FreeHalogen Free
- Frequency Range100MHz~5GHz
- Insertion Loss0.39dB
- Telecom IC TypeTELECOM CIRCUIT
- Isolation20dB
- RF TypeCellular, 3G, 4G
- Length1.5mm
- Height Seated (Max)0.4mm
- Width1.1mm
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
BGSA12GN10E6327XTSA1 Overview
It uses the Tape & Reel (TR) package in order to optimize the performance of the RF Switches.During the development of this RF Switch, 10 terminations were made.RF Switchs should be operated at -30°C~85°C temperature while operating.To operate the high power RF switch, 10 pins are required.Cellular, 3G, 4G RF switch ic type.There is 1.8V~3.6V voltage limit on the RF Switch.
BGSA12GN10E6327XTSA1 Features
Tape & Reel (TR) package
10 terminations
10 pins
Cellular, 3G, 4G RF Type
BGSA12GN10E6327XTSA1 Applications
There are a lot of Infineon Technologies
BGSA12GN10E6327XTSA1 RF Switches applications.
High speed filter selection
Digital transceiver front end switch
IF switching
Tuner modules
Antenna diversity switching
Cellular/PCS Base Stations
ISM
Wireless Local Loop
Smartphones
Tablets
It uses the Tape & Reel (TR) package in order to optimize the performance of the RF Switches.During the development of this RF Switch, 10 terminations were made.RF Switchs should be operated at -30°C~85°C temperature while operating.To operate the high power RF switch, 10 pins are required.Cellular, 3G, 4G RF switch ic type.There is 1.8V~3.6V voltage limit on the RF Switch.
BGSA12GN10E6327XTSA1 Features
Tape & Reel (TR) package
10 terminations
10 pins
Cellular, 3G, 4G RF Type
BGSA12GN10E6327XTSA1 Applications
There are a lot of Infineon Technologies
BGSA12GN10E6327XTSA1 RF Switches applications.
High speed filter selection
Digital transceiver front end switch
IF switching
Tuner modules
Antenna diversity switching
Cellular/PCS Base Stations
ISM
Wireless Local Loop
Smartphones
Tablets
BGSA12GN10E6327XTSA1 More Descriptions
BGSA12GN10 Series SPDT 3.6 V 6 GHz SMT RF Antenna Switch - PG-TSNP-10-1
Spdt Rf Cmos Antenna Switch, Tsnp-10; Frequency Min:0.1Ghz; Frequency Max:5Ghz; Rf Ic Case Style:Tsnp; No. Of Pins:10Pins; Supply Voltage Min:1.8V; Supply Voltage Max:3.6V; Operating Temperature Min:-40°C; Operating Temperature Rohs Compliant: Yes |Infineon BGSA12GN10E6327XTSA1
The BGSA12GN10 is a Single Pole Dual Throw (SPDT) RF antenna tuning switch optimized for low Coff enabling applications up to 5, TSNP-10-1, RoHSInfineon SCT
LTE / WCDMA Applications; 0.1 to 5.0 GHz coverage; Small form factor 1.1 mm x 1.5 mm; 400 m pad pitch; RoHS and WEEE compliant package | Target Applications: High-linearity SPDT for antenna tuning switching applications
The BGSA12GN10 is a Single Pole Dual Throw (SPDT) RF antenna tuning switch optimized for low Coff enabling applications up to 5.0 GHz. This single supply chip integrates on-chip CMOS logic driven by a simple, single-pin CMOS or TTL compatible control input signal. The 0.1 dB compression point exceeds the switch maximum input power level, resulting in linear performance at all signal levels. Unlike GaAs technology, the 0.1 dB compression point exceeds the switch maximum input power level, resulting in linear performance at all signal levels and external DC blocking capacitors at the RF ports are only required if DC voltage is applied externally. Due to its very high RF voltage ruggedness it is suited for switching any reactive devices such as inductors and capacitors in RF matching circuits without significant losses in quality factors. | Summary of Features: High-linearity SPDT for antenna tuning switching applications; Ultra-Low RON of 1.6 in ON state; Ultra-Low COFF of 120 fF in OFF state; High max RF voltage handling; Low harmonic generation; No power supply blocking required; Supply voltage: 1.8 to 3.6 V; Control voltage: 1.35 to 3.3 V (control high); Suitable for EDGE / C2K / LTE / WCDMA Applications; 0.1 to 5.0 GHz coverage; Small form factor 1.1 mm x 1.5 mm; 400 m pad pitch; RoHS and WEEE compliant package | Target Applications: High-linearity SPDT for antenna tuning switching applications
Spdt Rf Cmos Antenna Switch, Tsnp-10; Frequency Min:0.1Ghz; Frequency Max:5Ghz; Rf Ic Case Style:Tsnp; No. Of Pins:10Pins; Supply Voltage Min:1.8V; Supply Voltage Max:3.6V; Operating Temperature Min:-40°C; Operating Temperature Rohs Compliant: Yes |Infineon BGSA12GN10E6327XTSA1
The BGSA12GN10 is a Single Pole Dual Throw (SPDT) RF antenna tuning switch optimized for low Coff enabling applications up to 5, TSNP-10-1, RoHSInfineon SCT
LTE / WCDMA Applications; 0.1 to 5.0 GHz coverage; Small form factor 1.1 mm x 1.5 mm; 400 m pad pitch; RoHS and WEEE compliant package | Target Applications: High-linearity SPDT for antenna tuning switching applications
The BGSA12GN10 is a Single Pole Dual Throw (SPDT) RF antenna tuning switch optimized for low Coff enabling applications up to 5.0 GHz. This single supply chip integrates on-chip CMOS logic driven by a simple, single-pin CMOS or TTL compatible control input signal. The 0.1 dB compression point exceeds the switch maximum input power level, resulting in linear performance at all signal levels. Unlike GaAs technology, the 0.1 dB compression point exceeds the switch maximum input power level, resulting in linear performance at all signal levels and external DC blocking capacitors at the RF ports are only required if DC voltage is applied externally. Due to its very high RF voltage ruggedness it is suited for switching any reactive devices such as inductors and capacitors in RF matching circuits without significant losses in quality factors. | Summary of Features: High-linearity SPDT for antenna tuning switching applications; Ultra-Low RON of 1.6 in ON state; Ultra-Low COFF of 120 fF in OFF state; High max RF voltage handling; Low harmonic generation; No power supply blocking required; Supply voltage: 1.8 to 3.6 V; Control voltage: 1.35 to 3.3 V (control high); Suitable for EDGE / C2K / LTE / WCDMA Applications; 0.1 to 5.0 GHz coverage; Small form factor 1.1 mm x 1.5 mm; 400 m pad pitch; RoHS and WEEE compliant package | Target Applications: High-linearity SPDT for antenna tuning switching applications
The three parts on the right have similar specifications to BGSA12GN10E6327XTSA1.
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ImagePart NumberManufacturerFactory Lead TimePackage / CaseSurface MountNumber of PinsOperating TemperaturePackagingFeaturePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsHTS CodeVoltage - SupplyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchFrequencyTime@Peak Reflow Temperature-Max (s)CircuitTest FrequencyImpedanceHalogen FreeFrequency RangeInsertion LossTelecom IC TypeIsolationRF TypeLengthHeight Seated (Max)WidthRoHS StatusLead FreePublishedJESD-30 CodeIIP3Operating Supply VoltageView Compare
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BGSA12GN10E6327XTSA18 Weeks10-XFQFNYES10-30°C~85°CTape & Reel (TR)DC Blocked, Single Line ControlyesActive1 (Unlimited)108542.39.00.011.8V~3.6VBOTTOMBUTTNOT SPECIFIED12.85V0.4mm5GHzNOT SPECIFIEDSPDT2.69GHz50OhmHalogen Free100MHz~5GHz0.39dBTELECOM CIRCUIT20dBCellular, 3G, 4G1.5mm0.4mm1.1mmROHS3 CompliantLead Free-----
-
8 Weeks10-XFQFN Exposed PadYES--30°C~85°CTape & Reel (TR)--Active1 (Unlimited)108542.39.00.011.8V~3.6VBOTTOMBUTTNOT SPECIFIED12.85V0.4mm5GHzNOT SPECIFIEDSPST2.69GHz50Ohm-100MHz~5GHz0.35dBTELECOM CIRCUIT14dBGeneral Purpose1.5mm0.4mm1.1mmROHS3 CompliantLead Free2015R-XBCC-B1075dBm-
-
8 Weeks10-XFQFNYES10-30°C~85°CTape & Reel (TR)Single Line ControlyesActive1 (Unlimited)108542.39.00.011.8V~3.6VBOTTOMBUTTNOT SPECIFIED12.85V0.4mm5GHzNOT SPECIFIEDSP4T2.69GHz50OhmHalogen Free100MHz~5GHz0.46dBTELECOM CIRCUIT20dBCellular, 3G, 4G1.5mm0.4mm1.1mmROHS3 CompliantLead Free2000---
-
8 Weeks10-XFQFNYES10-30°C~85°CTape & Reel (TR)DC Blocked, Single Line ControlyesLast Time Buy1 (Unlimited)108542.39.00.011.8V~3.6VBOTTOMNO LEADNOT SPECIFIED12.85V0.4mm5GHzNOT SPECIFIEDSP3T2.69GHz50OhmHalogen Free100MHz~5GHz0.63dBTELECOM CIRCUIT17dBCellular, 3G, 4G1.5mm0.4mm1.1mmROHS3 CompliantLead Free2015--3V
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