NXP USA Inc. BFU730LXZ

Name: BFU730LXZ
Brand: NXP USA Inc.
SKU: 2465679-BFU730LXZ
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BFU730LXZ

Manufacturer:: NXP USA Inc.

Ventron No:: 2465679-BFU730LXZ

Description:: TRANS RF NPN 3V 30MA XQFN3

ECAD Model:

Datasheet:: BFU730LXZ

Specifications

NXP USA Inc. BFU730LXZ technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. BFU730LXZ.

Factory Lead Time
13 Weeks
Mounting Type
Surface Mount
Package / Case
3-XFDFN
Packaging
Tape & Reel (TR)
Published
2010
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
BFU730
Pin Count
3
Power - Max
160mW
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
205 @ 2mA 3V
Gain
15.8dB
Voltage - Collector Emitter Breakdown (Max)
3V
Current - Collector (Ic) (Max)
30mA
Frequency - Transition
53GHz
Noise Figure (dB Typ @ f)
0.75dB @ 6GHz
RoHS Status
ROHS3 Compliant

Description

BFU730LXZ Overview
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - Bipolar (BJT) - RF. The images we provide are for reference only, for detailed product information please see specification sheet BFU730LXZ or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of BFU730LXZ. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

BFU730LXZ More Descriptions

BFU730LX Series 3 V 30 mA NPN Wideband Silicon Germanium RF Transistor - SOT-883
RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Silicon, NPN
Trans RF BJT NPN 3V 0.03A 160mW 3-Pin DFN_C T/R
RF TRANSISTOR, NPN, 3V, 53GHZ, SOT883C; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 3V; Transition Frequency ft: 53GHz; Power Dissipation Pd: 160mW; DC Collector Current: 30mA; DC Current Gain hFE: 205hFE; RF Transistor Case: SOT-883C; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

Certification