NXP USA Inc. BFU530AR

Name: BFU530AR
Brand: NXP USA Inc.
SKU: 2465539-BFU530AR
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BFU530AR

Manufacturer:: NXP USA Inc.

Ventron No:: 2465539-BFU530AR

Description:: TRANS RF NPN 12V 40MA TO-236AB

ECAD Model:

Datasheet:: BFU530AR

Specifications

NXP USA Inc. BFU530AR technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. BFU530AR.

Factory Lead Time
13 Weeks
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-40°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
Automotive, AEC-Q101
Published
2011
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Additional Feature
LOW NOISE
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
BFU530
Pin Count
3
Reference Standard
AEC-Q101; IEC-60134
JESD-30 Code
R-PDSO-G3
Number of Elements
1
Configuration
SINGLE
Power - Max
450mW
Transistor Application
AMPLIFIER
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 10mA 8V
JEDEC-95 Code
TO-236AB
Gain
18dB
Voltage - Collector Emitter Breakdown (Max)
12V
Current - Collector (Ic) (Max)
40mA
Transition Frequency
11000MHz
Frequency - Transition
11GHz
Highest Frequency Band
L B
Noise Figure (dB Typ @ f)
0.6dB @ 900MHz
RoHS Status
ROHS3 Compliant

Description

Description:

The BFU530AR is a NPN Bipolar Junction Transistor (BJT) from NXP Semiconductors. It is designed for use in RF applications and is rated for a maximum collector-emitter voltage of 16V and a maximum collector current of 0.065A. It is packaged in a 3-pin TO-236AB package and is suitable for automotive applications.

Features:

• NPN Bipolar Junction Transistor (BJT)
• Rated for a maximum collector-emitter voltage of 16V
• Rated for a maximum collector current of 0.065A
• Packaged in a 3-pin TO-236AB package
• Suitable for automotive applications

Applications:

The BFU530AR is designed for use in RF applications such as amplifiers, oscillators, and mixers. It is also suitable for automotive applications.

BFU530AR More Descriptions

BFU530A: 12 V 40 mA 450 mW NPN Wideband Silicon RF Transistor-TO-236AB (SOT23)
RF Small Signal Bipolar Transistor, 0.04A I(C), 1-Element, L Band, Silicon, NPN, TO-236AB
Trans RF BJT NPN 16V 0.065A 450mW Automotive 3-Pin TO-236AB T/R
RF Bipolar Transistors NPN wideband silicon RF transistor
Transistor, 0 to 2 GHz, 10 dBm, 18 dB, 24V, SOT23, Silicon
NPN-HF 12V 40mA 450mW 11GHz SOT23
RF TRANSISTOR, AEC-Q101, NPN, 12V, SOT23; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 12V; Transition Frequency ft: 11GHz; Power Dissipation Pd: 450mW; DC Collector Current: 40mA; DC Current Gain hFE: 60hFE; RF Transistor Case: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

Product Comparison

The three parts on the right have similar specifications to BFU530AR.

Image

Part Number

Manufacturer

Factory Lead Time

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Additional Feature

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Reference Standard

JESD-30 Code

Number of Elements

Configuration

Power - Max

Transistor Application

Polarity/Channel Type

Transistor Type

DC Current Gain (hFE) (Min) @ Ic, Vce

JEDEC-95 Code

Gain

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Transition Frequency

Frequency - Transition

Highest Frequency Band

Noise Figure (dB Typ @ f)

RoHS Status

Case Connection

Supplier Device Package

View Compare
BFU530AR

NXP USA Inc.

13 Weeks

Surface Mount

TO-236-3, SC-59, SOT-23-3

YES

SILICON

-40°C~150°C TJ

Tape & Reel (TR)

Automotive, AEC-Q101

2011

Active

1 (Unlimited)

3

LOW NOISE

DUAL

GULL WING

NOT SPECIFIED

NOT SPECIFIED

BFU530

3

AEC-Q101; IEC-60134

R-PDSO-G3

1

SINGLE

450mW

AMPLIFIER

NPN

NPN

60 @ 10mA 8V

TO-236AB

18dB

12V

40mA

11000MHz

11GHz

L B

0.6dB @ 900MHz

ROHS3 Compliant

-

-

-
BFU580QX

NXP USA Inc.

13 Weeks

Surface Mount

TO-243AA

YES

SILICON

-40°C~150°C TJ

Cut Tape (CT)

-

2011

Active

1 (Unlimited)

3

LOW NOISE

SINGLE

FLAT

NOT SPECIFIED

NOT SPECIFIED

BFU580

3

AEC-Q101; IEC-60134

R-PSSO-F3

1

SINGLE

1W

AMPLIFIER

NPN

NPN

60 @ 30mA 8V

-

8.5dB

12V

60mA

10500MHz

10.5GHz

L B

1.3dB @ 1.8GHz

ROHS3 Compliant

COLLECTOR

-

BFU530AR vs BFU580QX
BFU530XVL

NXP USA Inc.

13 Weeks

Surface Mount

TO-253-4, TO-253AA

-

-

-40°C~150°C TJ

Tape & Reel (TR)

-

2011

Active

1 (Unlimited)

-

-

-

-

-

-

BFU530

-

-

-

-

-

450mW

-

-

NPN

60 @ 10mA 8V

-

16.5dB

12V

40mA

-

11GHz

-

1.1dB @ 1.8GHz

ROHS3 Compliant

-

SOT-143B

BFU530AR vs BFU530XVL
BFU550XRVL

NXP USA Inc.

13 Weeks

Surface Mount

SOT-143R

-

-

-40°C~150°C TJ

Tape & Reel (TR)

-

2011

Active

1 (Unlimited)

-

-

-

-

-

-

BFU550

4

-

-

-

-

450mW

-

-

NPN

60 @ 15mA 8V

-

15.5dB

12V

50mA

-

11GHz

-

1.25dB @ 1.8GHz

ROHS3 Compliant

-

-

BFU530AR vs BFU550XRVL