BFT93,215

NXP USA Inc. BFT93,215

Part Number:
BFT93,215
Manufacturer:
NXP USA Inc.
Ventron No:
2465552-BFT93,215
Description:
TRANS PNP 12V 5GHZ SOT-23
ECAD Model:
Datasheet:
BFT93,215

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Specifications
NXP USA Inc. BFT93,215 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. BFT93,215.
  • Factory Lead Time
    8 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Operating Temperature
    175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    1997
  • JESD-609 Code
    e3
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Additional Feature
    LOW NOISE
  • HTS Code
    8541.21.00.75
  • Subcategory
    Other Transistors
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    BFT93
  • Pin Count
    3
  • Reference Standard
    CECC
  • JESD-30 Code
    R-PDSO-G3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Power - Max
    300mW
  • Transistor Application
    AMPLIFIER
  • Polarity/Channel Type
    PNP
  • Transistor Type
    PNP
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    20 @ 30mA 5V
  • Voltage - Collector Emitter Breakdown (Max)
    12V
  • Current - Collector (Ic) (Max)
    35mA
  • Transition Frequency
    5000MHz
  • Frequency - Transition
    5GHz
  • Power Dissipation-Max (Abs)
    0.3W
  • Highest Frequency Band
    ULTRA HIGH FREQUENCY B
  • Noise Figure (dB Typ @ f)
    2.4dB @ 500MHz
  • Power Dissipation Ambient-Max
    0.3W
  • RoHS Status
    ROHS3 Compliant
Description
BFT93,215 Overview
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - Bipolar (BJT) - RF. The images we provide are for reference only, for detailed product information please see specification sheet BFT93,215 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of BFT93,215. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
BFT93,215 More Descriptions
BFT93 Series 12 V 300 mW 5 GHz SMT PNP Wideband Transistor - SOT-23-3
Trans RF BJT PNP 12V 0.035A 300mW 3-Pin TO-236AB T/R
RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, Ultra High Frequency Band, Silicon, PNP
PNP-RF 12V 35mA 300mW 5GHz SOT23
RF Transistor, PNP, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:12V; Transition Frequency ft:5GHz; Power Dissipation
Rf Wideband Transistor, Pnp, -12V, 5Ghz, 3-Sot-23, Full Reel; Transistor Polarity:Pnp; Collector Emitter Voltage Max:-12V; Transition Frequency:5Ghz; Power Dissipation:300Mw; Continuous Collector Current:-35Ma; No. Of Pins:3Pins Rohs Compliant: Yes |Nxp BFT93,215
RF TRANSISTOR, PNP, SOT-23; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 12V; Transition Frequency ft: 5GHz; Power Dissipation Pd: 300mW; DC Collector Current: -35mA; DC Current Gain hFE: 50hFE; RF Transistor Case: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Associated Gain Ga: 16.5dB; Continuous Collector Current Ic: -35mA; Continuous Collector Current Ic Max: -35mA; Current Ic Continuous a Max: 35mA; Current Ic hFE: 30mA; Gain Bandwidth ft Typ: 5GHz; Hfe Min: 20; No. of Transistors: 1; Noise Figure Typ: 2.4dB; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to 150°C; Power Dissipation Ptot Max: 300mW; SMD Marking: BFT93; Termination Type: Surface Mount Device; Test Frequency: 500MHz; Transistor Case Style: SOT-23; Voltage Vcbo: -15V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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