NXP USA Inc. BFT93,215
- Part Number:
- BFT93,215
- Manufacturer:
- NXP USA Inc.
- Ventron No:
- 2465552-BFT93,215
- Description:
- TRANS PNP 12V 5GHZ SOT-23
- Datasheet:
- BFT93,215
NXP USA Inc. BFT93,215 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. BFT93,215.
- Factory Lead Time8 Weeks
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature175°C TJ
- PackagingTape & Reel (TR)
- Published1997
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Additional FeatureLOW NOISE
- HTS Code8541.21.00.75
- SubcategoryOther Transistors
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberBFT93
- Pin Count3
- Reference StandardCECC
- JESD-30 CodeR-PDSO-G3
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE
- Power - Max300mW
- Transistor ApplicationAMPLIFIER
- Polarity/Channel TypePNP
- Transistor TypePNP
- DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 30mA 5V
- Voltage - Collector Emitter Breakdown (Max)12V
- Current - Collector (Ic) (Max)35mA
- Transition Frequency5000MHz
- Frequency - Transition5GHz
- Power Dissipation-Max (Abs)0.3W
- Highest Frequency BandULTRA HIGH FREQUENCY B
- Noise Figure (dB Typ @ f)2.4dB @ 500MHz
- Power Dissipation Ambient-Max0.3W
- RoHS StatusROHS3 Compliant
BFT93,215 Overview
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - Bipolar (BJT) - RF. The images we provide are for reference only, for detailed product information please see specification sheet BFT93,215 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of BFT93,215. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - Bipolar (BJT) - RF. The images we provide are for reference only, for detailed product information please see specification sheet BFT93,215 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of BFT93,215. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
BFT93,215 More Descriptions
BFT93 Series 12 V 300 mW 5 GHz SMT PNP Wideband Transistor - SOT-23-3
Trans RF BJT PNP 12V 0.035A 300mW 3-Pin TO-236AB T/R
RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, Ultra High Frequency Band, Silicon, PNP
PNP-RF 12V 35mA 300mW 5GHz SOT23
RF Transistor, PNP, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:12V; Transition Frequency ft:5GHz; Power Dissipation
Rf Wideband Transistor, Pnp, -12V, 5Ghz, 3-Sot-23, Full Reel; Transistor Polarity:Pnp; Collector Emitter Voltage Max:-12V; Transition Frequency:5Ghz; Power Dissipation:300Mw; Continuous Collector Current:-35Ma; No. Of Pins:3Pins Rohs Compliant: Yes |Nxp BFT93,215
RF TRANSISTOR, PNP, SOT-23; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 12V; Transition Frequency ft: 5GHz; Power Dissipation Pd: 300mW; DC Collector Current: -35mA; DC Current Gain hFE: 50hFE; RF Transistor Case: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Associated Gain Ga: 16.5dB; Continuous Collector Current Ic: -35mA; Continuous Collector Current Ic Max: -35mA; Current Ic Continuous a Max: 35mA; Current Ic hFE: 30mA; Gain Bandwidth ft Typ: 5GHz; Hfe Min: 20; No. of Transistors: 1; Noise Figure Typ: 2.4dB; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to 150°C; Power Dissipation Ptot Max: 300mW; SMD Marking: BFT93; Termination Type: Surface Mount Device; Test Frequency: 500MHz; Transistor Case Style: SOT-23; Voltage Vcbo: -15V
Trans RF BJT PNP 12V 0.035A 300mW 3-Pin TO-236AB T/R
RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, Ultra High Frequency Band, Silicon, PNP
PNP-RF 12V 35mA 300mW 5GHz SOT23
RF Transistor, PNP, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:12V; Transition Frequency ft:5GHz; Power Dissipation
Rf Wideband Transistor, Pnp, -12V, 5Ghz, 3-Sot-23, Full Reel; Transistor Polarity:Pnp; Collector Emitter Voltage Max:-12V; Transition Frequency:5Ghz; Power Dissipation:300Mw; Continuous Collector Current:-35Ma; No. Of Pins:3Pins Rohs Compliant: Yes |Nxp BFT93,215
RF TRANSISTOR, PNP, SOT-23; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 12V; Transition Frequency ft: 5GHz; Power Dissipation Pd: 300mW; DC Collector Current: -35mA; DC Current Gain hFE: 50hFE; RF Transistor Case: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Associated Gain Ga: 16.5dB; Continuous Collector Current Ic: -35mA; Continuous Collector Current Ic Max: -35mA; Current Ic Continuous a Max: 35mA; Current Ic hFE: 30mA; Gain Bandwidth ft Typ: 5GHz; Hfe Min: 20; No. of Transistors: 1; Noise Figure Typ: 2.4dB; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to 150°C; Power Dissipation Ptot Max: 300mW; SMD Marking: BFT93; Termination Type: Surface Mount Device; Test Frequency: 500MHz; Transistor Case Style: SOT-23; Voltage Vcbo: -15V
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