Infineon Technologies BFS483H6327XTSA1

Name: BFS483H6327XTSA1
Brand: Infineon Technologies
SKU: 3069033-BFS483H6327XTSA1
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BFS483H6327XTSA1

Manufacturer:: Infineon Technologies

Ventron No:: 3069033-BFS483H6327XTSA1

Description:: TRANS RF NPN 12V 65MA SOT363

ECAD Model:

Datasheet:: BFS483H6327XTSA1

Specifications

Infineon Technologies BFS483H6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BFS483H6327XTSA1.

Factory Lead Time
4 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
6-VSSOP, SC-88, SOT-363
Number of Pins
6
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2013
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Additional Feature
LOW NOISE
Max Power Dissipation
450mW
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Frequency
8GHz
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
BFS483
Reference Standard
AEC-Q101
Number of Elements
2
Polarity
NPN
Power Dissipation
450mW
Transistor Application
AMPLIFIER
Halogen Free
Halogen Free
Transistor Type
2 NPN (Dual)
Collector Emitter Voltage (VCEO)
12V
Max Collector Current
65mA
DC Current Gain (hFE) (Min) @ Ic, Vce
70 @ 15mA 8V
Collector Emitter Breakdown Voltage
12V
Gain
19dB
Transition Frequency
8000MHz
Max Breakdown Voltage
12V
Collector Base Voltage (VCBO)
20V
Emitter Base Voltage (VEBO)
2V
Collector-Base Capacitance-Max
0.54pF
Noise Figure (dB Typ @ f)
0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BFS483H6327XTSA1 Overview
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - Bipolar (BJT) - RF. The images we provide are for reference only, for detailed product information please see specification sheet BFS483H6327XTSA1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of BFS483H6327XTSA1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

BFS483H6327XTSA1 More Descriptions

BFS483 Series 12 V 65 mA Low Noise Silicon Bipolar RF Transistor - SOT-363-6
Trans RF BJT NPN 12V 0.065A 450mW Automotive 6-Pin SOT-363 T/R
NPN Silicon RF Transistor for low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA, SOT363, RoHSInfineon SCT
RF TRANSISTOR, NPN, 12V, 8GHZ, SOT363; Transistor Polarity: Dual NPN; Collector Emitter Voltage V(br)ceo: 12V; Transition Frequency ft: 8GHz; Power Dissipation Pd: 450mW; DC Collector Current: 65mA; DC Current Gain hFE: 70hFE; RF Transistor Case: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (27-Jun-2018)
NPN Silicon RF Transistor for low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA | Summary of Features: For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA; fT = 8 GHz, F = 0.9 dB at 900 MHz; Two (galvanic) internal isolated Transistor in one package; For orientation in reel see package information in datasheet; Pb-free (RoHS compliant) package; Qualification report according to AEC-Q101 available | Target Applications: Wireless Communications; For amplifier and oscillator applications in RF Front-end

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