Infineon Technologies BFR340FH6327XTSA1

Name: BFR340FH6327XTSA1
Brand: Infineon Technologies
SKU: 3069077-BFR340FH6327XTSA1
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BFR340FH6327XTSA1

Manufacturer:: Infineon Technologies

Ventron No:: 3069077-BFR340FH6327XTSA1

Description:: TRANS RF NPN 9V 20MA 3TSFP

ECAD Model:

Datasheet:: BFR340FH6327XTSA1

Specifications

Infineon Technologies BFR340FH6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BFR340FH6327XTSA1.

Factory Lead Time
8 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-723
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2010
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
SMD/SMT
ECCN Code
EAR99
Additional Feature
LOW NOISE
Max Power Dissipation
60mW
Terminal Position
DUAL
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Frequency
14GHz
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
BFR340
Number of Elements
1
Configuration
SINGLE
Test Frequency
1.8GHz
Power Dissipation
60mW
Power - Max
75mW
Transistor Application
AMPLIFIER
Halogen Free
Halogen Free
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
6V
Max Collector Current
10mA
DC Current Gain (hFE) (Min) @ Ic, Vce
90 @ 5mA 3V
Collector Emitter Breakdown Voltage
6V
Gain
13dB ~ 28dB
Voltage - Collector Emitter Breakdown (Max)
9V
Current - Collector (Ic) (Max)
20mA
Transition Frequency
14000MHz
Max Breakdown Voltage
9V
Collector Base Voltage (VCBO)
15V
Emitter Base Voltage (VEBO)
2V
hFE Min
60
Collector-Base Capacitance-Max
0.4pF
Noise Figure (dB Typ @ f)
0.9dB ~ 1.2dB @ 100MHz ~ 2.4GHz
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BFR340FH6327XTSA1 Overview
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - Bipolar (BJT) - RF. The images we provide are for reference only, for detailed product information please see specification sheet BFR340FH6327XTSA1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of BFR340FH6327XTSA1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

BFR340FH6327XTSA1 More Descriptions

RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, S Band, Silicon, NPN
Trans RF BJT NPN 6V 0.02A 75000mW Automotive 3-Pin TSFP T/R
RF TRANSISTOR BJT NPN 6V 0.01A TSFP3, RL
Transistor Polarity = NPN / Continuous Collector Current (Ic) mA = 20 / Collector-Emitter Voltage (Vceo) V = 6 / DC Current Gain (hFE) = 120 / Collector-Base Voltage (Vcbo) V = 15 / Emitter-Base Voltage (Vebo) V = 2 / Operating Temperature Max. °C = 150 / Transit Frequency GHz = 14 / Power Dissipation (Pd) mW = 75 / Package Type = SOT-723 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel
NPN Silicon RF Transistor | Summary of Features: General purpose Low Noise Amplifier; Ideal for low current operation; High breakdown voltage enables operation in automotive applications; Minimum noise figure 1.0 dB @ 1mA,1.5V,1.9GHz; Small package 1,2 x 1,2 mm2 with visible leads; Pb-free (RoHS compliant) package; Qualification report according to AEC-Q101 available | Target Applications: Wireless Communications; For amplifier and oscillator applications in RF Front-end
Transistor, RF TSFP3; Transistor Polarity:N Channel; Collector Emitter Voltage V(br)ceo:6V; Power Dissipation Pd:60mW; DC Collector Current:10mA; DC Current Gain hFE:120; Operating Temperature Range:-65°C to 150°C; RF Transistor Case:TSFP; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Associated Gain Ga:16dB; Continuous Collector Current Ic:10mA; Continuous Collector Current Ic Max:10mA; Current Ic Continuous a Max:10mA; Current Ic hFE:5mA; Gain Bandwidth ft Min:11GHz; Gain Bandwidth ft Typ:14GHz; Hfe Min:60; No. of Transistors:1; Noise Figure Typ:1.15dB; Output @ Third Order Intercept Point IP3:12dB; Package / Case:TSFP3; Power Dissipation Ptot Max:60mW; SMD Marking:FAs; Termination Type:SMD; Test Frequency:1.8GHz; Transistor Case Style:TSFP; Voltage Vcbo:15V

Certification