Infineon Technologies BFP842ESDH6327XTSA1

BFP842ESD Series NPN 120 mW 3.7 V 40 mA Low Noise Bipolar RF Transistor -SOT-343
Trans RF BJT NPN 3.25V 0.04A 120mW Automotive 4-Pin(3 Tab) SOT-343 T/R
RF Transistor, NPN, 3.25V, 57GHZ, SOT343; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:3.25V; Transition Frequency ft:57GHz; Power
RF TRANSISTOR, NPN, 3.25V, 57GHZ, SOT343; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 3.25V; Transition Frequency ft: 57GHz; Power Dissipation Pd: 120mW; DC Collector Current: 40mA; DC Current Gain hFE: 150hFE; RF Transistor Case: SOT-343; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
The BFP842ESD is a high performance HBT (Heterojunction Bipolar Transistor) specifically designed for 2.3 - 3.5 GHz LNA applications. The device is based upon the reliable high volume SiGe:C technology of Infineon. The BFP842ESD provides inherently good input power match as well as inherently good noise match between 2.3 and 3.5 GHz. The simultaneous noise and power match without lossy external matching components at the input leads to a low external parts count, to a very good noise figure and to a high transducer gain in the application. Integrated protection elements at in- and output make the device robust against ESD and excessive RF input power. The device offers its high performance at low current and voltage and is especially well-suited for portable batterypowered applications in which energy efficiency is a key requirement. The device comes in an easy to use industry standard package with visible leads. | Summary of Features: Robust very low noise amplifier based on Infineons reliable, high volume; SiGe:C technology; Unique combination of high end RF performance and robustness: 16 dBm maximum RF input power, 1 kV HBM ESD hardness; High linearity OIP3 = 25.5 dBm at 3.5 GHz, 2.5 V, 15 mA; High transition frequency fT = 60 GHz enables very low noise figure at high frequencies: NFmin = 0.65 dB at 3.5 GHz, 2.5 V, 5 mA; Transducer gain |S21|2 = 16 dB @ 3.5 GHz, 2.5 V, 15 mA; Ideal for low voltage applications e.g. VCC = 1.8 V and 2.85 V (3.3 V, 3.6 V requires corresponding collector resistor); Low power consumption, ideal for mobile applications; Easy to use Pb free (RoHS compliant) and halogen free industry standard package with visible leads | Target Applications: Mobile and fixed connectivity applications: WLAN 802.11b/g/n, WiMAX 2.5/3.5 GHz, Bluetooth; Satellite communication systems: GNSS Navigation systems (GPS, GLONASS, COMPASS/Beidu/Galileo), Satellite radio (SDARs, DAB and C-band LNB) and C-band LNB (1st and 2nd stage LNA); Multimedia applications such as mobile/portable TV, Mobile TV, FM Radio; 3G/4G UMTS/LTE mobile phone applications; ISM applications like RKE, AMR and Zigbee