Infineon Technologies BFG 235 E6327
- Part Number:
- BFG 235 E6327
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2844897-BFG 235 E6327
- Description:
- TRANSISTOR RF NPN 15V SOT-223
- Datasheet:
- BFG235
Infineon Technologies BFG 235 E6327 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BFG 235 E6327.
- Mounting TypeSurface Mount
- Package / CaseTO-261-4, TO-261AA
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2007
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- ECCN CodeEAR99
- Additional FeatureBUILT IN EMITTER BALLASTING RESISTOR
- SubcategoryOther Transistors
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PDSO-G4
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN RESISTOR
- Case ConnectionCOLLECTOR
- Power - Max2W
- Transistor ApplicationAMPLIFIER
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- DC Current Gain (hFE) (Min) @ Ic, Vce75 @ 200mA 8V
- Gain12.5dB
- Voltage - Collector Emitter Breakdown (Max)15V
- Current - Collector (Ic) (Max)300mA
- Transition Frequency5500MHz
- Frequency - Transition5.5GHz
- Power Dissipation-Max (Abs)2W
- Highest Frequency BandL B
- Collector-Base Capacitance-Max3.6pF
- Noise Figure (dB Typ @ f)1.7dB @ 900MHz
- RoHS StatusNon-RoHS Compliant
BFG 235 E6327 Overview
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - Bipolar (BJT) - RF. The images we provide are for reference only, for detailed product information please see specification sheet BFG 235 E6327 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of BFG 235 E6327. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - Bipolar (BJT) - RF. The images we provide are for reference only, for detailed product information please see specification sheet BFG 235 E6327 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of BFG 235 E6327. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
BFG 235 E6327 More Descriptions
RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN
12.5 dB Compliant Surface Mount 75 NPN 5.5 GHz Contains Lead Tape and Reel
RF TRANS NPN 15V 5.5GHZ SOT223-4
12.5 dB Compliant Surface Mount 75 NPN 5.5 GHz Contains Lead Tape and Reel
RF TRANS NPN 15V 5.5GHZ SOT223-4
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