SIEMENS BF998 technical specifications, attributes, parameters and parts with similar specifications to SIEMENS BF998.
- Surface MountYES
- Number of Terminals4
- Transistor Element MaterialSILICON
- Terminal PositionDUAL
- Terminal FormGULL WING
- JESD-30 CodeR-PDSO-G4
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE
- Case ConnectionSOURCE
- Transistor ApplicationAMPLIFIER
BF998 Overview
This product is manufactured by SIEMENS and belongs to the category of Modules. The images we provide are for reference only, for detailed product information please see specification sheet BF998 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of BF998. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by SIEMENS and belongs to the category of Modules. The images we provide are for reference only, for detailed product information please see specification sheet BF998 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of BF998. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
BF998 More Descriptions
Trans RF MOSFET N-CH 12V 0.03A 4-Pin(3 Tab) SOT-143B
MOSFET, N, RF, DUAL-GATE, SOT-143B; Drain Source Voltage Vds:12V; Continuous Current Id:30mA; Power Dissipation Pd:200mW; Operating Frequency
MOSFET, N, RF, DUAL-GATE, SOT-143; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:12V; Current, Id Cont:30mA; Case Style:SOT-143; Termination Type:SMD; Application Code:Dual-Gate (HF) MOSFET; Current, Idss Max:18mA; ;RoHS Compliant: Yes
MOSFET, N, RF, DUAL-GATE, SOT-143B; Drain Source Voltage Vds: 12V; Continuous Drain Current Id: 30mA; Power Dissipation Pd: 200mW; Operating Frequency Min: -; Operating Frequency Max: -; RF Transistor Case: SOT-143B; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Application Code: Dual-Gate (HF) MOSFET; Current Idss Max: 18mA; Current Idss Min: 2mA; Full Power Rating Temperature: 25°C; Gfs Min: 21mA/V; No. of Transistors: 1; Noise Figure Typ: 1dB; Power Dissipation Max: 200mW; Power Dissipation Ptot Max: 200mW; Termination Type: Surface Mount Device; Transistor Case Style: SOT-143B; Transistor Polarity: N Channel; Transistor Type: RF MOSFET; Voltage Vds Typ: 12V
MOSFET, N, RF, DUAL-GATE, SOT-143B; Drain Source Voltage Vds:12V; Continuous Current Id:30mA; Power Dissipation Pd:200mW; Operating Frequency
MOSFET, N, RF, DUAL-GATE, SOT-143; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:12V; Current, Id Cont:30mA; Case Style:SOT-143; Termination Type:SMD; Application Code:Dual-Gate (HF) MOSFET; Current, Idss Max:18mA; ;RoHS Compliant: Yes
MOSFET, N, RF, DUAL-GATE, SOT-143B; Drain Source Voltage Vds: 12V; Continuous Drain Current Id: 30mA; Power Dissipation Pd: 200mW; Operating Frequency Min: -; Operating Frequency Max: -; RF Transistor Case: SOT-143B; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Application Code: Dual-Gate (HF) MOSFET; Current Idss Max: 18mA; Current Idss Min: 2mA; Full Power Rating Temperature: 25°C; Gfs Min: 21mA/V; No. of Transistors: 1; Noise Figure Typ: 1dB; Power Dissipation Max: 200mW; Power Dissipation Ptot Max: 200mW; Termination Type: Surface Mount Device; Transistor Case Style: SOT-143B; Transistor Polarity: N Channel; Transistor Type: RF MOSFET; Voltage Vds Typ: 12V
The three parts on the right have similar specifications to BF998.
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ImagePart NumberManufacturerSurface MountNumber of TerminalsTransistor Element MaterialTerminal PositionTerminal FormJESD-30 CodeQualification StatusNumber of ElementsConfigurationCase ConnectionTransistor ApplicationSubcategoryReach Compliance CodeOperating Temperature (Max)Polarity/Channel TypeDrain Current-Max (Abs) (ID)FET TechnologyPower Dissipation-Max (Abs)Operating ModeDS Breakdown Voltage-MinHighest Frequency BandPower Gain-Min (Gp)View Compare
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BF998YES4SILICONDUALGULL WINGR-PDSO-G4Not Qualified1SINGLESOURCEAMPLIFIER------------ -
YES-------Single--FET General Purpose Powercompliant150°CN-CHANNEL0.03AMETAL-OXIDE SEMICONDUCTOR0.2W----
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YES4SILICONDUALGULL WINGR-PDSO-G4Not Qualified1SINGLE WITH BUILT-IN DIODESOURCEAMPLIFIER---N-CHANNEL0.03AMETAL-OXIDE SEMICONDUCTOR-DUAL GATE, DEPLETION MODE12VULTRA HIGH FREQUENCY B16.5dB
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YES4SILICONDUALGULL WINGR-PDSO-G4Not Qualified1SINGLESOURCEAMPLIFIER-----------
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