ON Semiconductor BD681

Name: BD681
Brand: ON Semiconductor
SKU: 2466896-BD681
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BD681

Manufacturer:: ON Semiconductor

Ventron No:: 2466896-BD681

Description:: TRANS NPN DARL 100V 4A TO225AA

ECAD Model:

Datasheet:: BD681

Specifications

ON Semiconductor BD681 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BD681.

Lifecycle Status
OBSOLETE (Last Updated: 1 week ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Number of Pins
3
Supplier Device Package
TO-225AA
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
Published
2008
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Voltage - Rated DC
100V
Max Power Dissipation
40W
Current Rating
4A
Base Part Number
BD681
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Power Dissipation
40W
Power - Max
40W
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
100V
Max Collector Current
4A
DC Current Gain (hFE) (Min) @ Ic, Vce
750 @ 1.5A 3V
Current - Collector Cutoff (Max)
500μA
Vce Saturation (Max) @ Ib, Ic
2.5V @ 30mA, 1.5A
Collector Emitter Breakdown Voltage
100V
Voltage - Collector Emitter Breakdown (Max)
100V
Current - Collector (Ic) (Max)
4A
Collector Emitter Saturation Voltage
2.5V
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
5V
hFE Min
750
Continuous Collector Current
4A
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead

Description

BD681 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 750 @ 1.5A 3V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 2.5V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 2.5V @ 30mA, 1.5A.Continuous collector voltages of 4A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 4A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.TO-225AA is the supplier device package for this product.This device displays a 100V maximum voltage - Collector Emitter Breakdown.During maximum operation, collector current can be as low as 4A volts.

BD681 Features
the DC current gain for this device is 750 @ 1.5A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 30mA, 1.5A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
the supplier device package of TO-225AA

BD681 Applications
There are a lot of ON Semiconductor
BD681 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BD681 More Descriptions

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Transistor, Npn, 100V, 4A, Sot32; Transistor Polarity:Npn; Collector Emitter Voltage V(Br)Ceo:100V; Transition Frequency Ft:-; Power Dissipation Pd:40W; Dc Collector Current:4A; Dc Current Gain Hfe:750Hfe; Transistor Case Rohs Compliant: Yes |Stmicroelectronics BD681

Certification