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BD436 More Descriptions
Trans GP BJT PNP 32V 4A 36000mW 3-Pin(3 Tab) SOT-32 Tube
Power Bipolar Transistor, 4A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin
TRANSISTOR, PNP, TO-126; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 32V; Transition Frequency ft: 3MHz; Power Dissipation Pd: 36W; DC Collector Current: 4A; DC Current Gain hFE: 140hFE; Transistor Case Style: TO-126; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Collector Emitter Saturation Voltage Vce(on): -500mV; Continuous Collector Current Ic Max: 4A; Current Ic Continuous a Max: 4A; Current Ic hFE: 2A; Device Marking: BD436; Full Power Rating Temperature: 25°C; Gain Bandwidth ft Min: 3MHz; Gain Bandwidth ft Typ: 3MHz; Hfe Min: 50; No. of Transistors: 1; Power Dissipation Ptot Max: 36W; Voltage Vcbo: 32V
Power Bipolar Transistor, 4A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin
TRANSISTOR, PNP, TO-126; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 32V; Transition Frequency ft: 3MHz; Power Dissipation Pd: 36W; DC Collector Current: 4A; DC Current Gain hFE: 140hFE; Transistor Case Style: TO-126; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Collector Emitter Saturation Voltage Vce(on): -500mV; Continuous Collector Current Ic Max: 4A; Current Ic Continuous a Max: 4A; Current Ic hFE: 2A; Device Marking: BD436; Full Power Rating Temperature: 25°C; Gain Bandwidth ft Min: 3MHz; Gain Bandwidth ft Typ: 3MHz; Hfe Min: 50; No. of Transistors: 1; Power Dissipation Ptot Max: 36W; Voltage Vcbo: 32V
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