Diodes Incorporated BCX56TA
- Part Number:
- BCX56TA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 3068964-BCX56TA
- Description:
- TRANS NPN 80V 1A SOT89
- Datasheet:
- BCX56TA
Diodes Incorporated BCX56TA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated BCX56TA.
- Factory Lead Time15 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-243AA
- Number of Pins4
- Weight51.993025mg
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingCut Tape (CT)
- Published2011
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Additional FeatureHIGH RELIABILITY
- Max Power Dissipation1W
- Terminal FormFLAT
- Frequency150MHz
- Base Part NumberBCX56
- Pin Count3
- JESD-30 CodeR-PSSO-F3
- Qualification StatusNot Qualified
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation1W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product150MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)80V
- Max Collector Current1A
- DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 150mA 2V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
- Collector Emitter Breakdown Voltage80V
- Transition Frequency150MHz
- Collector Emitter Saturation Voltage500mV
- Max Breakdown Voltage80V
- Collector Base Voltage (VCBO)100V
- Emitter Base Voltage (VEBO)5V
- hFE Min40
- Collector-Base Capacitance-Max25pF
- Height1.65mm
- Length6.7mm
- Width3.7mm
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
BCX56TA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 150mA 2V.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 50mA, 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 150MHz is present in the part.There is a breakdown input voltage of 80V volts that it can take.Collector current can be as low as 1A volts at its maximum.
BCX56TA Features
the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
BCX56TA Applications
There are a lot of Diodes Incorporated
BCX56TA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 150mA 2V.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 50mA, 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 150MHz is present in the part.There is a breakdown input voltage of 80V volts that it can take.Collector current can be as low as 1A volts at its maximum.
BCX56TA Features
the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
BCX56TA Applications
There are a lot of Diodes Incorporated
BCX56TA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BCX56TA More Descriptions
Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
80V 1W 40@150mA,2V 1A NPN SOT-89 Bipolar Transistors - BJT ROHS
BCX56 Series 80 V 1 A NPN Surface Mount Transistor - SOT-89-3
Trans GP BJT NPN 80V 1A 2000mW 4-Pin(3 Tab) SOT-89 T/R
Trans GP BJT NPN 80V 1A 4Pin SOT223 | Diodes Inc BCX56TA
Trans, Npn, 80V, 1A, 150Deg C, 2W Rohs Compliant: Yes |Diodes Inc. BCX56TA
80V 1W 40@150mA,2V 1A NPN SOT-89 Bipolar Transistors - BJT ROHS
BCX56 Series 80 V 1 A NPN Surface Mount Transistor - SOT-89-3
Trans GP BJT NPN 80V 1A 2000mW 4-Pin(3 Tab) SOT-89 T/R
Trans GP BJT NPN 80V 1A 4Pin SOT223 | Diodes Inc BCX56TA
Trans, Npn, 80V, 1A, 150Deg C, 2W Rohs Compliant: Yes |Diodes Inc. BCX56TA
The three parts on the right have similar specifications to BCX56TA.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeAdditional FeatureMax Power DissipationTerminal FormFrequencyBase Part NumberPin CountJESD-30 CodeQualification StatusNumber of ElementsElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinCollector-Base Capacitance-MaxHeightLengthWidthREACH SVHCRoHS StatusLead FreeSubcategoryPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)SeriesHTS CodeTerminal PositionConfigurationPower - MaxFrequency - TransitionTerminal FinishRadiation HardeningView Compare
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BCX56TA15 WeeksTinSurface MountSurface MountTO-243AA451.993025mgSILICON-65°C~150°C TJCut Tape (CT)2011e3yesActive1 (Unlimited)3EAR99HIGH RELIABILITY1WFLAT150MHzBCX563R-PSSO-F3Not Qualified1Single1WCOLLECTORSWITCHING150MHzNPNNPN80V1A40 @ 150mA 2V100nA ICBO500mV @ 50mA, 500mA80V150MHz500mV80V100V5V4025pF1.65mm6.7mm3.7mmNo SVHCROHS3 CompliantLead Free------------
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15 WeeksTinSurface MountSurface MountTO-243AA451.993025mgSILICON-65°C~150°C TJTape & Reel (TR)2006e3yesActive1 (Unlimited)3EAR99HIGH RELIABILITY1WFLAT150MHzBCX513R-PSSO-F3Not Qualified1Single1WCOLLECTORSWITCHING150MHzPNPPNP45V1A40 @ 150mA 2V100nA ICBO500mV @ 50mA, 500mA45V150MHz-500mV45V45V5V--1.5mm4.5mm2.5mmNo SVHCROHS3 Compliant-Other Transistors26040--------
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4 WeeksTinSurface MountSurface MountTO-243AA--SILICON150°C TJTape & Reel (TR)2011-yesNot For New Designs1 (Unlimited)3EAR99-2WFLAT---R-PSSO-F3-1--COLLECTORAMPLIFIER-NPNNPN500mV1A100 @ 150mA 2V100nA ICBO500mV @ 50mA, 500mA60V100MHz--60V-------ROHS3 Compliant--NOT SPECIFIEDNOT SPECIFIEDAutomotive, AEC-Q1018541.21.00.75SINGLESINGLE2W100MHz--
-
15 Weeks-Surface MountSurface MountTO-243AA451.993025mgSILICON-65°C~150°C TJTape & Reel (TR)2011e3yesActive1 (Unlimited)3-HIGH RELIABILITY1WFLAT150MHzBCX55103R-PSSO-F3-1Single1WCOLLECTORSWITCHING150MHzNPNNPN60V1A63 @ 150mA 2V100nA ICBO500mV @ 50mA, 500mA60V150MHz500mV60V60V5V-25pF1.6mm4.6mm2.6mmNo SVHCROHS3 Compliant----------Matte Tin (Sn)No
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