Infineon Technologies BCR142E6327HTSA1
- Part Number:
- BCR142E6327HTSA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2847294-BCR142E6327HTSA1
- Description:
- TRANS PREBIAS NPN 0.2W SOT23-3
- Datasheet:
- BCR142E6327HTSA1
Infineon Technologies BCR142E6327HTSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BCR142E6327HTSA1.
- Factory Lead Time26 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- PackagingTape & Reel (TR)
- Published2011
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Max Operating Temperature150°C
- Min Operating Temperature-65°C
- Voltage - Rated DC50V
- Max Power Dissipation200mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Current Rating100mA
- Base Part NumberBCR142
- Number of Elements1
- PolarityNPN
- Element ConfigurationSingle
- Power Dissipation200mW
- Transistor ApplicationSWITCHING
- Halogen FreeNot Halogen Free
- Transistor TypeNPN - Pre-Biased
- Collector Emitter Voltage (VCEO)300mV
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 5mA 5V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic300mV @ 500μA, 10mA
- Collector Emitter Breakdown Voltage50V
- Transition Frequency150MHz
- Max Breakdown Voltage50V
- Frequency - Transition150MHz
- hFE Min70
- Resistor - Base (R1)22 k Ω
- Resistor - Emitter Base (R2)47 k Ω
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
BCR142E6327HTSA1 Overview
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - Bipolar (BJT) - Single, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet BCR142E6327HTSA1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of BCR142E6327HTSA1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - Bipolar (BJT) - Single, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet BCR142E6327HTSA1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of BCR142E6327HTSA1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
BCR142E6327HTSA1 More Descriptions
BCR142 Series NPN 50 V 100 mA SMT Silicon Digital Transistor - SOT-23-3
Trans Digital BJT NPN 50V 100mA 3-Pin SOT-23 T/R - Tape and Reel
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
Bipolar Transistors - Pre-Biased NPN Silicon Digital TRANSISTOR
NPN Silicon Digital Transistor, SOT23, RoHSInfineon SCT
NPN Silicon Digital Transistor | Summary of Features: Switching circuit, inverter, interface circuit, driver circuit; Built in bias resistor (R1=22k, R2=47k); Pb-free (RoHS compliant) package; Qualified according AEC Q101
Digital Trans, 50V, 22K/47K, Sot-23-3; Digital Transistor Polarity:single Npn; Collector Emitter Voltage V(Br)Ceo:50V; Continuous Collector Current Ic:100Ma; Base Input Resistor R1:22Kohm; Base-Emitter Resistor R2:47Kohm; Resistor Rohs Compliant: Yes
Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) mA = 100 / DC Current Gain (hFE) = 70 / Power Dissipation (Pd) mW = 200 / Typical Input Resistor kOhm = 22 / Collector-Base Voltage (Vcbo) V = 50 / Collector-Emitter Voltage (Vceo) V = 50 / Operating Temperature Max. °C = 150 / Operating Temperature Min. °C = -65 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 300 / Operating Frequency MHz = 150
Trans Digital BJT NPN 50V 100mA 3-Pin SOT-23 T/R - Tape and Reel
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
Bipolar Transistors - Pre-Biased NPN Silicon Digital TRANSISTOR
NPN Silicon Digital Transistor, SOT23, RoHSInfineon SCT
NPN Silicon Digital Transistor | Summary of Features: Switching circuit, inverter, interface circuit, driver circuit; Built in bias resistor (R1=22k, R2=47k); Pb-free (RoHS compliant) package; Qualified according AEC Q101
Digital Trans, 50V, 22K/47K, Sot-23-3; Digital Transistor Polarity:single Npn; Collector Emitter Voltage V(Br)Ceo:50V; Continuous Collector Current Ic:100Ma; Base Input Resistor R1:22Kohm; Base-Emitter Resistor R2:47Kohm; Resistor Rohs Compliant: Yes
Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) mA = 100 / DC Current Gain (hFE) = 70 / Power Dissipation (Pd) mW = 200 / Typical Input Resistor kOhm = 22 / Collector-Base Voltage (Vcbo) V = 50 / Collector-Emitter Voltage (Vceo) V = 50 / Operating Temperature Max. °C = 150 / Operating Temperature Min. °C = -65 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 300 / Operating Frequency MHz = 150
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