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BCP56-16 More Descriptions
Bipolar (BJT) Single Transistor, NPN, 80 V, 1 A, 1.6 W, SOT-223, Surface Mount
Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin
Trans GP BJT NPN 80V 1A 1600mW 4-Pin(3 Tab) SOT-223 T/R
BCP56-16,Transistor,BJT NPN 80V 1A
Power Bipolar, NPN, 2V, 50mA, SOT-223, Tape and ReelSTMicroelectronics SCT
Bipolar Transistors - BJT NPN Medium Voltage
TRANSISTOR, NPN, 100V, 1A, SOT-223; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: -; Power Dissipation Pd: 1.6W; DC Collector Current: 1A; DC Current Gain hFE: 25hFE; Transistor Ca
Trans, Npn, 80V, 1A, 150Deg C, 1.6W; Transistor Polarity:Npn; Collector Emitter Voltage Max:80V; Continuous Collector Current:1A; Power Dissipation:1.6W; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Transition Frequency:- Rohs Compliant: Yes |Stmicroelectronics BCP56-16
Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) A = 1 / Collector-Emitter Voltage (Vceo) V = 80 / DC Current Gain (hFE) = 250 / Collector-Base Voltage (Vcbo) V = 100 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Power Dissipation (Pd) W = 1.6 / Package Type = SOT-223 / Pins = 4 / Mounting Type = SMD / Packaging = Tape & Reel / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 500
Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin
Trans GP BJT NPN 80V 1A 1600mW 4-Pin(3 Tab) SOT-223 T/R
BCP56-16,Transistor,BJT NPN 80V 1A
Power Bipolar, NPN, 2V, 50mA, SOT-223, Tape and ReelSTMicroelectronics SCT
Bipolar Transistors - BJT NPN Medium Voltage
TRANSISTOR, NPN, 100V, 1A, SOT-223; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: -; Power Dissipation Pd: 1.6W; DC Collector Current: 1A; DC Current Gain hFE: 25hFE; Transistor Ca
Trans, Npn, 80V, 1A, 150Deg C, 1.6W; Transistor Polarity:Npn; Collector Emitter Voltage Max:80V; Continuous Collector Current:1A; Power Dissipation:1.6W; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Transition Frequency:- Rohs Compliant: Yes |Stmicroelectronics BCP56-16
Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) A = 1 / Collector-Emitter Voltage (Vceo) V = 80 / DC Current Gain (hFE) = 250 / Collector-Base Voltage (Vcbo) V = 100 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Power Dissipation (Pd) W = 1.6 / Package Type = SOT-223 / Pins = 4 / Mounting Type = SMD / Packaging = Tape & Reel / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 500
The three parts on the right have similar specifications to BCP56-16.
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ImagePart NumberManufacturerSurface MountNumber of TerminalsTransistor Element MaterialECCN CodeTerminal PositionTerminal FormPin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationCase ConnectionTransistor ApplicationPolarity/Channel TypeTransition FrequencyCollector Current-Max (IC)DC Current Gain-Min (hFE)Collector-Emitter Voltage-MaxPackage / CasePackagingRoHS StatusReach Compliance CodeView Compare
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BCP56-16----------------------- -
YES4SILICONEAR99DUALGULL WING4R-PDSO-G4Not Qualified1SINGLECOLLECTORAMPLIFIERNPN130MHz1A6360V----
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------------------SOT-223Tape & Reel (TR)RoHS Compliant-
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YES4SILICON-DUALGULL WING-R-PDSO-G4-1SINGLECOLLECTOR-NPN130MHz1A6345V---compliant
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