SIEMENS BC857B
- Part Number:
- BC857B
- Manufacturer:
- SIEMENS
- Ventron No:
- 5632084-BC857B
- Description:
- PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collec
- Datasheet:
- BC857B Preliminary
part No. BC857B Is this available? : YesShipped from : HK warehouseSame model may have different manufacturers, images only for reference.
BC857B More Descriptions
Transistor: PNP; bipolar; -45V; -0.1A; 0.2W; -55 150 deg.C; SMD; SOT23
Trans GP BJT PNP 45V 0.1A 250mW Automotive 3-Pin SOT-23 T/R
BJT, SOT-23, 45V, 100mA, PNP, 150°C
Transistor PNP -0,1A/-50V 0,25W SOT-23 BC857B
Transistor Polarity = PNP / Configuration = Single / Continuous Collector Current (Ic) mA = 100 / Collector-Emitter Voltage (Vceo) V = 45 / DC Current Gain (hFE) = 520 / Collector-Base Voltage (Vcbo) V = 50 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 100 / Power Dissipation (Pd) mW = 250 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 650 / Base Emitter Saturation Voltage Max. (Vbe(sat)) mV = 900 / Reflow Temperature Max. °C = 260
Trans GP BJT PNP 45V 0.1A 250mW Automotive 3-Pin SOT-23 T/R
BJT, SOT-23, 45V, 100mA, PNP, 150°C
Transistor PNP -0,1A/-50V 0,25W SOT-23 BC857B
Transistor Polarity = PNP / Configuration = Single / Continuous Collector Current (Ic) mA = 100 / Collector-Emitter Voltage (Vceo) V = 45 / DC Current Gain (hFE) = 520 / Collector-Base Voltage (Vcbo) V = 50 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 100 / Power Dissipation (Pd) mW = 250 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 650 / Base Emitter Saturation Voltage Max. (Vbe(sat)) mV = 900 / Reflow Temperature Max. °C = 260
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