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BC856A More Descriptions
BJT, SOT-23, 65V, 100mA, PNP, 150°C
Trans GP BJT PNP 65V 0.1A 250mW 3-Pin SOT-23 T/R
Transistor Polarity = PNP / Configuration = Single / Continuous Collector Current (Ic) mA = 100 / Collector-Emitter Voltage (Vceo) V = 65 / DC Current Gain (hFE) = 180 / Collector-Base Voltage (Vcbo) V = 80 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 100 / Power Dissipation (Pd) mW = 250 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 650 / Base Emitter Saturation Voltage Max. (Vbe(sat)) mV = 900 / Reflow Temperature Max. °C = 260
Trans GP BJT PNP 65V 0.1A 250mW 3-Pin SOT-23 T/R
Transistor Polarity = PNP / Configuration = Single / Continuous Collector Current (Ic) mA = 100 / Collector-Emitter Voltage (Vceo) V = 65 / DC Current Gain (hFE) = 180 / Collector-Base Voltage (Vcbo) V = 80 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 100 / Power Dissipation (Pd) mW = 250 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 650 / Base Emitter Saturation Voltage Max. (Vbe(sat)) mV = 900 / Reflow Temperature Max. °C = 260
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PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collec
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