Nexperia USA Inc. BC847B,215
- Part Number:
- BC847B,215
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2463084-BC847B,215
- Description:
- TRANS NPN 45V 0.1A SOT23
- Datasheet:
- BC847B,215
Nexperia USA Inc. BC847B,215 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BC847B,215.
- Factory Lead Time4 Weeks
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- SeriesAutomotive, AEC-Q101
- Published2008
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Base Part NumberBC847
- Pin Count3
- Number of Elements1
- ConfigurationSINGLE
- Power Dissipation250mW
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)45V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 2mA 5V
- Current - Collector Cutoff (Max)15nA ICBO
- Vce Saturation (Max) @ Ib, Ic400mV @ 5mA, 100mA
- Transition Frequency100MHz
- Collector Emitter Saturation Voltage200mV
- Frequency - Transition100MHz
- Collector Base Voltage (VCBO)50V
- Emitter Base Voltage (VEBO)6V
- hFE Min110
- Max Junction Temperature (Tj)150°C
- Ambient Temperature Range High150°C
- Height1.1mm
- RoHS StatusROHS3 Compliant
BC847B,215 Overview
This device has a DC current gain of 200 @ 2mA 5V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 200mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 6V to achieve high efficiency.In this part, there is a transition frequency of 100MHz.The maximum collector current is 100mA volts.
BC847B,215 Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 400mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
BC847B,215 Applications
There are a lot of Nexperia USA Inc.
BC847B,215 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 200 @ 2mA 5V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 200mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 6V to achieve high efficiency.In this part, there is a transition frequency of 100MHz.The maximum collector current is 100mA volts.
BC847B,215 Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 400mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
BC847B,215 Applications
There are a lot of Nexperia USA Inc.
BC847B,215 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BC847B,215 More Descriptions
45V 250mW 100mA NPN SOT-23(SOT-23-3) Bipolar Transistors - BJT ROHS
vp_BC847x_SER - 45 V, 100 mA NPN general-purpose transistors
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
Trans GP BJT NPN 45V 0.1A 250mW Automotive 3-Pin TO-236AB T/R
Transistor NPN, SOT-23 (TO-236AB) 45V 100mASurface Mount
Bipolar Junction Transistor, NPN Type, TO-236AA
Bipolar Transistor; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency Typ, ft:100MHz; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain Max (hfe):290 ;RoHS Compliant: Yes
TRANSISTOR, NPN, REEL 3K; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain hFE:290; Operating Temperature Range:-65°C to 150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Collector Emitter Voltage Vces:200mV; Continuous Collector Current Ic Max:100A; Current Ic Continuous a Max:100mA; Current Ic hFE:2A; Device Marking:BC847B; Gain Bandwidth ft Min:100MHz; Gain Bandwidth ft Typ:300MHz; Hfe Min:200; No. of Transistors:1; Noise Factor Max:10dB; Package / Case:SOT-23; Power Dissipation Pd:250mW; Power Dissipation Ptot Max:200mW; Reel Quantity:3000; SMD Marking:1F; Tape Width:8mm; Termination Type:SMD; Voltage Vcbo:50V
Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) mA = 100 / Collector-Emitter Voltage (Vceo) V = 45 / DC Current Gain (hFE) = 450 / Collector-Base Voltage (Vcbo) V = 50 / Emitter-Base Voltage (Vebo) V = 6 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 100 / Power Dissipation (Pd) mW = 250 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 400 / Base Emitter Saturation Voltage Max. (Vbe(sat)) mV = 900
vp_BC847x_SER - 45 V, 100 mA NPN general-purpose transistors
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
Trans GP BJT NPN 45V 0.1A 250mW Automotive 3-Pin TO-236AB T/R
Transistor NPN, SOT-23 (TO-236AB) 45V 100mASurface Mount
Bipolar Junction Transistor, NPN Type, TO-236AA
Bipolar Transistor; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency Typ, ft:100MHz; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain Max (hfe):290 ;RoHS Compliant: Yes
TRANSISTOR, NPN, REEL 3K; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain hFE:290; Operating Temperature Range:-65°C to 150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Collector Emitter Voltage Vces:200mV; Continuous Collector Current Ic Max:100A; Current Ic Continuous a Max:100mA; Current Ic hFE:2A; Device Marking:BC847B; Gain Bandwidth ft Min:100MHz; Gain Bandwidth ft Typ:300MHz; Hfe Min:200; No. of Transistors:1; Noise Factor Max:10dB; Package / Case:SOT-23; Power Dissipation Pd:250mW; Power Dissipation Ptot Max:200mW; Reel Quantity:3000; SMD Marking:1F; Tape Width:8mm; Termination Type:SMD; Voltage Vcbo:50V
Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) mA = 100 / Collector-Emitter Voltage (Vceo) V = 45 / DC Current Gain (hFE) = 450 / Collector-Base Voltage (Vcbo) V = 50 / Emitter-Base Voltage (Vebo) V = 6 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 100 / Power Dissipation (Pd) mW = 250 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 400 / Base Emitter Saturation Voltage Max. (Vbe(sat)) mV = 900
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