Diodes Incorporated BC847A-7-F

Name: BC847A-7-F
Brand: Diodes Incorporated
SKU: 2463384-BC847A-7-F
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BC847A-7-F

Manufacturer:: Diodes Incorporated

Ventron No:: 2463384-BC847A-7-F

Description:: TRANS NPN 45V 0.1A SOT23-3

ECAD Model:

Datasheet:: BC847A-7-F

Specifications

Diodes Incorporated BC847A-7-F technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated BC847A-7-F.

Factory Lead Time
15 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2008
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
SMD/SMT
ECCN Code
EAR99
Additional Feature
HIGH RELIABILITY
Subcategory
Other Transistors
Max Power Dissipation
300mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Frequency
300MHz
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
BC847
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power Dissipation
350mW
Power - Max
300mW
Transistor Application
SWITCHING
Gain Bandwidth Product
300MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
45V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
110 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA
Vce Saturation (Max) @ Ib, Ic
600mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage
45V
Transition Frequency
300MHz
Collector Emitter Saturation Voltage
600mV
Max Breakdown Voltage
45V
Collector Base Voltage (VCBO)
50V
Emitter Base Voltage (VEBO)
6V
hFE Min
110
Height
1mm
Length
3.05mm
Width
1.4mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BC847A-7-F Overview
This device has a DC current gain of 110 @ 2mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 600mV.A VCE saturation (Max) of 600mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.As you can see, the part has a transition frequency of 300MHz.A breakdown input voltage of 45V volts can be used.A maximum collector current of 100mA volts is possible.

BC847A-7-F Features
the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz

BC847A-7-F Applications
There are a lot of Diodes Incorporated
BC847A-7-F applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BC847A-7-F More Descriptions

Trans GP BJT NPN 45V 0.1A 350mW Automotive 3-Pin SOT-23 T/R
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon
BC847A Series NPN 45 V 310 mW Small Signal Transisitor Surface Mount - SOT-23-3
Transistor NPN 45V 0.1A SOT23 | Diodes Inc BC847A-7-F
Bipolar Transistors - BJT NPN BIPOLAR
TRANSISTOR, NPN, SOT23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency Typ ft:300MHz; Power Dissipation Pd:300mW; DC Collector Current:100mA; DC Current Gain hFE:220; Operating Temperature Range:-65°C to 150°C; Transistor Case Style:SOT-23; No. of Pins:3; Collector Emitter Voltage Vces:600mV; Current Ic Continuous a Max:100mA; Gain Bandwidth ft Typ:300MHz; Hfe Min:110; Package / Case:SOT-23; Power Dissipation Pd:300mW; Termination Type:SMD; Transistor Type:Small Signal

Certification