Nexperia USA Inc. BC847,215
- Part Number:
- BC847,215
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2464093-BC847,215
- Description:
- TRANS NPN 45V 0.1A SOT23
- Datasheet:
- BC847,215
Nexperia USA Inc. BC847,215 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BC847,215.
- Factory Lead Time4 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- SeriesAutomotive, AEC-Q101
- Published2008
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- TerminationSMD/SMT
- ECCN CodeEAR99
- Max Power Dissipation250mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Frequency100MHz
- Base Part NumberBC847
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation250mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product100MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)45V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce110 @ 2mA 5V
- Current - Collector Cutoff (Max)15nA ICBO
- Vce Saturation (Max) @ Ib, Ic400mV @ 5mA, 100mA
- Collector Emitter Breakdown Voltage45V
- Transition Frequency100MHz
- Collector Emitter Saturation Voltage200mV
- Max Breakdown Voltage45V
- Collector Base Voltage (VCBO)50V
- Emitter Base Voltage (VEBO)6V
- hFE Min110
- Max Junction Temperature (Tj)150°C
- Ambient Temperature Range High150°C
- Height1.1mm
- Length3mm
- Width1.4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
BC847,215 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 110 @ 2mA 5V DC current gain.As it features a collector emitter saturation voltage of 200mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 45V volts.When collector current reaches its maximum, it can reach 100mA volts.
BC847,215 Features
the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 400mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
BC847,215 Applications
There are a lot of Nexperia USA Inc.
BC847,215 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 110 @ 2mA 5V DC current gain.As it features a collector emitter saturation voltage of 200mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 45V volts.When collector current reaches its maximum, it can reach 100mA volts.
BC847,215 Features
the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 400mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
BC847,215 Applications
There are a lot of Nexperia USA Inc.
BC847,215 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BC847,215 More Descriptions
Bipolar junction transistor, NPN, 100 mA, 45 V, SMD, SOT-23, BC847,215
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
Trans GP BJT NPN 45V 0.1A 250mW Automotive 3-Pin TO-236AB T/R
BC847 Series 45 V Surface Mount NPN General Purpose Transistor - SOT-23
TRANSISTOR NPN 45V 100MA SOT23
vp_BC847x_SER - 45 V, 100 mA NPN general-purpose transistors
Bipolar Transistor; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency Typ, ft:100MHz; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain Max (hfe):110 ;RoHS Compliant: Yes
TRANSISTOR, NPN, REEL 3K; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain hFE:110; Operating Temperature Range:-65°C to 150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Collector Emitter Voltage Vces:200mV; Continuous Collector Current Ic Max:100mA; Current Ic Continuous a Max:100mA; Current Ic hFE:2mA; Device Marking:BC847; Gain Bandwidth ft Min:100MHz; Gain Bandwidth ft Typ:100MHz; Hfe Min:125; Hfe Typ:125; No. of Transistors:1; Noise Factor Max:10dB; Package / Case:SOT-23; Power Dissipation Pd:250mW; Power Dissipation Ptot Max:250mW; Reel Quantity:3000; SMD Marking:1H; Tape Width:8mm; Termination Type:SMD; Voltage Vcbo:50V
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
Trans GP BJT NPN 45V 0.1A 250mW Automotive 3-Pin TO-236AB T/R
BC847 Series 45 V Surface Mount NPN General Purpose Transistor - SOT-23
TRANSISTOR NPN 45V 100MA SOT23
vp_BC847x_SER - 45 V, 100 mA NPN general-purpose transistors
Bipolar Transistor; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency Typ, ft:100MHz; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain Max (hfe):110 ;RoHS Compliant: Yes
TRANSISTOR, NPN, REEL 3K; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain hFE:110; Operating Temperature Range:-65°C to 150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Collector Emitter Voltage Vces:200mV; Continuous Collector Current Ic Max:100mA; Current Ic Continuous a Max:100mA; Current Ic hFE:2mA; Device Marking:BC847; Gain Bandwidth ft Min:100MHz; Gain Bandwidth ft Typ:100MHz; Hfe Min:125; Hfe Typ:125; No. of Transistors:1; Noise Factor Max:10dB; Package / Case:SOT-23; Power Dissipation Pd:250mW; Power Dissipation Ptot Max:250mW; Reel Quantity:3000; SMD Marking:1H; Tape Width:8mm; Termination Type:SMD; Voltage Vcbo:50V
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